• Title/Summary/Keyword: Amorphous Structure

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The Multi-layer Fabrication and Characteristic Performance for Dark Current Reduction of Amorphous Selenium (비정질 셀레늄의 누설전류 저감을 위한 다층구조 제작 및 특성 평가)

  • Park, J.K.;Kang, S.S.;Suk, D.W.;Lee, H.W.;Nam, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.849-852
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    • 2002
  • Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.

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Thermal Pro0perties and High Temperature Deformation Behaviors of Al-Ni-Y Amprphous Alloy (Al-Ni-Y 비정질 합금의 열적특성 및 고온변형특성에 관한 연구)

  • 고병철;김종현;유연철
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1998.03a
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    • pp.72-75
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    • 1998
  • High temperature deformation behavior of Al85Ni10Y5 alloy extrudates fabricated with amorphous ribbons was investigated at temperature range form 300 to 550$^{\circ}C$ by torsion tests. Thermal properties of amorphous ribbons as a function of aging temperature was studied by Differential Scanning Calorimetry(DSC). The Al phase crystallite firstly formed in the amorphous ribbons and its crystallization temperature(Tx) was ∼210$^{\circ}C$. During the processings of consolidation and extrusion, nano-grained structure was formed in the Al85Ni10Y5 alloy extrudates. The as-extrudated Al85Ni10Y5 alloy and the Al85Ni10Y5 alloy annealed at 250$^{\circ}C$ for 1 hour showed the flow curve of DRV(dynamic recovery) during hot deformation at 400-550$^{\circ}C$. On the other hand, the Al85Ni10Y5 alloy annealed at 400$^{\circ}C$ for 1 hour showed the flow curve of DRX(dynamic recrystallization) during hot deformation at 450-500$^{\circ}C$.

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Crystallization of $PbTiO_3$ Prepared by Wet-Chemical Methods (습식 화학법으로 제조된 $PbTiO_3$의 결정화)

  • 최병철;이문호
    • Journal of the Korean Ceramic Society
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    • v.28 no.11
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    • pp.892-896
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    • 1991
  • The cyrstallization behavior of lead titanate powders prepared by sol-gel and coprecipitation techniques was investigated. The lead titanate precursors were derived from a mixed solution of lead nitrate and titanium tetrachloride at 4$0^{\circ}C$ to 43$^{\circ}C$ and pH of 9.00 to 9.75. The X-ray diffraction patterns of the dried gel and coprecipitated powders showed it to be amorphous. DTA runs of the powders indicated crystallization to occur at 475~48$0^{\circ}C$. However, the amorphous powders were partially crystallized at 400~45$0^{\circ}C$ with sufficient annealing time. The room temperature Raman spectra from heat-treated powders changed continuously from amorphous to crystalline state with increasing heat-treating temperature. By annealing coprecipitated powders, a dramatic change in the Raman spectra due to the structural relaxation as the annealing temperatures increased, was clearly visible. i.e., coprecipitated, gel, and crystalline structure, in turn.

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Properties of CoCrTa Thin Film Introduce Two Step methode and Amorphous Si Under Layer for Perpendicular Magnetic Recording Media (Two Step방식과 아몰퍼스 Si 하지층 도입에 따른 수직자기기록 매체용 CoCrTa 박막의 특성 평가)

  • Park, Won-Hyo;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.550-552
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    • 2003
  • We prepared $Co_{77}Cr_{20}Ta_3$ Magnetic layer for perpendicular magnetic recording media with introduce Two-step methode and Amorphous Si Underlayer on slide glass substrate. The thickness of magnetic layer were 100nm, and Underlayer were varied from 5 to 100 nm. The multi layer Properties of crystal structure were examined with XRD. Prepared thin films showed improvement of dispersion angle of c-axis orientation ${\Delta}{\theta}_{50}$ caused by inserting Buffer-layer and amorphous Si underlayer.

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Fundamental Study on the Formation of Nanostructured Coating Layer (나노구조 용사코팅층의 형성에 관한 기초적 연구)

  • Kim, Y.S.
    • Journal of Power System Engineering
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    • v.9 no.4
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    • pp.90-95
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    • 2005
  • The wire-arc process is a low-cost thermal spray method simply utilizes electrical energy to melt the feedstock wire. It is more userful for field applications, especially to coat large surface area. In this paper, a special Fe-based alloy coatings by using the wire-arc process were developed. Nanoscale composite coatings were achieved either during spraying or through a post heat treatment. As-sprayed Fe-based alloy coatings had been an amorphous matrix structure, after heating to $700^{\circ}C$ for 10 minutes a solid state transformation occurred in the some fraction of amorphous matrix which resulted in the formation of nanostructured recrystallized phase. Scanning electron microscopy (SEM) and field emotional scanning electron microscope(FE-SEM) were applied to analyze the microstructure of the coatings. Additionally hardness and bend resistance of the Fe-based alloy coatings were examined, and these results were compared with those of partially stabilized zirconia(PSZ) coatings by using the plasma spray process.

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Deposition Behaviors of Ti-Si-N Thin Films by RF Plasma-Enhanced Chemical Vapor Deposition. (RF-PECVD법에 의한 Ti-Si-N 박막의 증착거동)

  • 이응안;이윤복;김광호
    • Journal of the Korean institute of surface engineering
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    • v.35 no.4
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    • pp.211-217
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    • 2002
  • Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and Mx 60% had a maximum hardness value of 38GPa. The microstructure of films with a maximum hardness was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase by HRTEM analyses. The microstructure of maximum hardness with Si content (10 at.%) was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase, but to have partly aligned structure of TiN and some inhomogeniety in distribution. and At above 10 at.% Si content, TiN crystallite became finer and more isotropic also thickness of amorphous silicon nitride phase increased at microstructure.

Development of An Algorithm to Analyse Magnetic Field of Amorphous Core using Homogenization Technique (균질화 기법을 이용한 비정질 Core의 자개해석 Algorithm개발)

  • Lee, Jin-Hee;Shin, Pan-Seok
    • Proceedings of the KIEE Conference
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    • 1994.07a
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    • pp.79-81
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    • 1994
  • A solution of magnetic fields for amorphous core transformer has been tried using homogenization technique. The technique, which is derived by applying asymptotic expansion to the standard finite element method, is helpful to analyse a joint part of amorphous core transformer microscopically. A butt-lap-step joint type of lamination method is modeled and its equivalent reluctivity is calculated to analyse various quantities of the magnetic fields. The algorithm is also applicable to other electric devices which have complicated material structure with repeated patterns.

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Investigation of thermal Characteristics with Amorphous Chalcogenide Thin Film for Programmable Metallization Cell (PMC 응용을 위한 비정질 칼코게나이드 박막의 열적특성)

  • Ju, Long-Yun;Nam, Ki-Hyeon;Choi, Hyuk;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1331-1332
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    • 2007
  • In the present works, we investigate the thermal characteristics on Ag/$As_{2}S_{3}$ and Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film structure for PMC (Programmable Metallization Cell).As the results of resistance change with the temperature on Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film, the resistance was abruptly dropped from the initial resistance of 1.32 M ${\Omega}$ to the saturated value of 800 ${\Omega}$ at $203^{\circ}C$. On the other hand, the resistance increased to 1.3 $M{\Omega}$ at $219^{\circ}C$.

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X-Ray Emission Spectroscopic Analysis for Crystallized Amorphous Silicon Induced by Excimer Laser Annealing

  • John, Young-Min;Kim, Dong-Hwan;Cho, Woon-Jo;Lee, Seok;Kurmaev, E.-Z.
    • Journal of the Optical Society of Korea
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    • v.5 no.1
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    • pp.1-4
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    • 2001
  • The results of investigating $SiL_{2,3}$/ X-ray emission valence spectra of amorphous silicon films irradiated by excimer laser are presented. It is found that laser annealing leads to crystallization of amorphous silicon films and the crystallinity increases with the laser energy density from 250 to 400 mJ/$\textrm{cm}^2$. The vertical structure of the film is investigated by changing the accelerating voltage on the X-ray tube, and the chemical and structural state of Si$_3$N$_4$ buffer layer is found not to be changed by the excimer laser treatment.

Effect of Heat Treatment on Magnetic and Electrical Properties of AlN Films with Co Particles

  • Oh, Chang-Sup;Han, Chang-Suk
    • Korean Journal of Metals and Materials
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    • v.50 no.3
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    • pp.248-255
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    • 2012
  • AlN thin films containing various amounts of Co, AlN-Co, and Al-Co alloy particles were prepared using a two-facing-target type dc reactive sputtering (TFTS) system. The as-deposited films exhibited the variable nature expected from an AlN-rich phase, and an amorphous-like phase, depending on the Co content in the films. Specific favorable microstructures were prepared by optimizing annealing conditions. Those microstructures and their magnetic properties and resistivity were investigated. As-deposited films showed very small saturation magnetization and an amorphous-like structure. However, when annealed, the as-deposited amorphous-like phase decomposes into phases of AlN, Co and Al-Co. These annealing induced changes in the microstructure improve the magnetization and resistivity of the films. Further improvement of soft magnetic properties could lead to the material being used for high density magnetic recording head material.