• 소성∙가공
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• 제8권3호
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• pp.327-327
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• 1999

The oxidation behavior of 60%Cu-40%Zn brass haying small amounts of Zr, Cr, Mg, Al, and Si was studied between 873 and 1043 K in air. The alloying element of Mg was harmful, while other alloying elements were beneficial to oxidation resistance. Particularly, the simultaneous addition of Al and Si decreased the oxidation rate drastically. During oxidation, Zr formed ZrO₂, Cr formed CuCr₂O₄, Mg formed MgO, Al formed A1₂CuO₄, and Si formed amorphous SiO₂. These oxides were incorporated in the oxide scale composed predominantly of ZnO. The oxide scales formed on all the tested alloyswere prone to cracking, wrinkling, and spallation.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.64.1-64.1
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• 2011

다중접합 태양전지는 흡수대역이 다른 juntion으로 구성되어, 각각의 태양전지 간의 전류정합(current matching)이 효율 향상에 중요하다. 본 실험에서는 Top cell에 i-a-Si:H(Thinckness:100nm), Middle cell에는 i-a-SiGe:H(Thickness:800nm)을 적용하였고, bottom cell에는 i-${\mu}c$-Si:H(Thickness:1800nm), 수광부의 p-layer에 에 SiOx을 이용하여 triple juntion amorphous silicon solar cell(삼중접합태양전지)을 구현하였다. 이를 최적화 시키기 위해 ASA simulation을 이용하여 각 Cell의 intrinsic layer의 밴드갭을 가변하였다. 가변 결과 i-a-Si:H : 1.85 eV, i-a-SiGe:H: 1.6 eV, i-${\mu}c$-Si:H: 1.4 eV에서 태양전지 효율 14.5 %을 기록 하였다. 본 연구를 통해 Triple juntion cell에서의 intrinsic layer의 밴드갭 최적화를 구현해 볼 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.280-284
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• 2005

Recently, the demands of the high quality LCD display device have increased. We have developed the smart LCD that photo sensor is integrated in. Amorphous silicon TFTs have photo leakage current characteristics when the channel of TFTs are lighted on. This characteristic has applied in our device. We expect that photo sensor integrated LCDs have lots of merits in mobile display device, note PC panel and LCD TV.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.450-452
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• 2005

The ion beam alignment technique is one of the potential and fascinating methods. However, there are merely a few reports about aligning nematic liquid crystals (NLCs) horizontally for in-plane switching mode (IPS) by means of low energy ion beam exposure on inorganic materials such as DLC. In this study, we have investigated the tilted vertical alignment of NLC by the ion beam technique on the thin films of various amorphous silicon compounds as new inorganic alignment materials. Appropriate pretilt angles of NLC with preferred orientation on these thin films were achieved. And the electro-optic property of vertically aligned single domain cells has been investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.531-534
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• 2005

This paper presents a new data line sharing technique for TFT-LCD panels. This technique reduces the number of data driver IC's to half by having two adjacent pixels share the same data line. This in turn doubles the number of gate lines, which are integrated directly on the glass substrate of amorphous silicon for further cost reduction and more compactness. The proposed technique with new pixel array structure was applied to 15.4 inch WXGA TFT-LCD panels and has proven that the number of driver IC's were halved with nearly 41% circuit cost reduction and 5.3% reduction in power consumption without degrading the image quality.

• 한국전기전자재료학회논문지
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• 제25권8호
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• pp.580-583
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• 2012

The dependency of processing pressure on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were deposited by using radio frequency (RF) magnetron sputtering method with different partial pressure. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing pressure during deposition processing. As a result, oxygen vacancies generated in SZTO channel layer with increasing partial pressure resulted in negative shift in $V_{th}$ and increase in on-current.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1996년도 춘계학술발표회논문집(4)
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• pp.133-138
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• 1996

For the application of hydrogenated amorphous silicon (a-Si:H) p-i-n structural diode as the alpha particle spectroscopy, the induced charge collection was simulated based on a relevant non-uniform charge generation model. The simulation was accomplished for two extreme cases of the incident direction of alpha particle, p-and n-side, respectively. As expected, for the complete charge collection, the hole collection should be severely considered due to its poor mobility and the full depletion bias required. For the comparison of signal corresponding to the detector configuration or structure, although n-i-p configuration shows a wider range of linearity to the energy, p-i-n configuration is more suitable in the viewpoint of linearity and signal value for the considering energy range.

• 대한전기학회논문지
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• 제43권2호
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• pp.312-317
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• 1994

We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using plasma enchanced chemical vapor deposition(PECVD). The device shows 2500${\AA}$ SiOS12T, 400-1500${\AA}$ a-Si tickness, 350V output voltage and 9.55${\times}$10S04T average on/off current ratio. We found that the leakage current of high voltage TFT occurred 0-70V drain voltage. As the leakage current depend on the a-Si thickness, the leakage current of high voltage TFT decreased by reduction of the a-Si thickness.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1239-1242
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• 1994

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}-Si:H$) and LPCVD(${\alpha}-Si$). The electrical and optical properties and surface roughness of crystallized thin films have been measured. The dc conductivities, crystallinity and surface roughness of the films increased as the laser energy density and shot density were increased. Also, we have investigated the effects of 2-step annealing employing SPC and ELA. The properties of 2-step annealed films were better than those of films annealed by ELA only.

• 한국표면공학회지
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• 제36권2호
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• pp.141-147
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• 2003

Silicon carbide thin film was deposited in APCVD and LPCVD system with 1,3-DSB precursor 1,3-DSB is the single precursor to deposit SiC on Si at low temperature. SiC film was deposited at $850^{\circ}C$ lower than ordinary temperature ($1000~1200^{\circ}C$) in CVD process. SiC thin film glowed to high oriented (111) plane in APCVD system. In LPCVD system, SiC film groved to preferred (220) plane at same temperature. This discrepancy between preferred planes can be described by the difference of deposition mechanism. Amorphous phase and crystal defect were observed in APCVD system with the main growth mechanism of mass transport limited region. But in LPCVD system, we got the SIC film of uniform, faceted structure and high quality.