• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.258-260
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• 2008

Developed halftone exposure technique was successfully applied to the fabrication of narrow transistor channels below $4\;{\mu}m$ with conventional photolithography method. Asymmetric slits concept of photo mask was applied to make channel lengths (L) shorter for thin film transistor's (TFT) high performance. These short channel TFTs verified better quality transistor characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.123-126
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• 2008

We report the improved AMOLED with a-Si TFT backplane based on our unique structure. Our new structure is called Dual-plate OLED Display (DOD). It can also achieve not only higher uniformity of luminance in large-sized display due to low electrical resistance of common electrode but also wider viewing angle.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.171-174
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• 2008

We present results demonstrating that low power consumption phosphorescent AMOLED displays can be fabricated on ultra-thin ($25{\mu}m$) stainless steel substrates, combining an amorphous silicon backplane with a top emission phosphorescent OLED frontplane. We will present preliminary results of flexibility testing on these displays.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.45-51
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• 1997

Low temperature activation of dopants which were doped using ion mass doping system in amorphous silicon(a-Si) thin films was investigated. With a 20.angs.-thick Ni film on top of the a-Si thin film, the activation temperature of dopants lowered to 500.deg. C. When the doping was performaed after the deposition of Ni thin film on the a-Si thin films (post-doping), the activation time was shorter than that of dopants mass, the activation time of the dopants doped by pre-doping method increased. It turned NiSi2 formation, while the decrease of activation time was mainly due to the enhancement of the NiSi2 formation by mixing of Ni and a-Si at the interface of Ni and a -Si thin during the ion doping process.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.747-751
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• 2006

The hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) with copper as source and drain electrode has been fabricated to obtain its transfer characteristics and stressed with positive and negative bias to investigate the instability variation comparing to conventional MoW-Al based TFT device. The results show that there is no copper diffusion into active layer of a-Si:H TFT, even during the thermal process. In addition, a 15-inch XGA a Si:H TFT LCD display utilizing Cu as gate electrodes has been developed.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.605-608
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• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.695-698
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• 2006

The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1119-1122
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• 2005

A selective deposition of Co thin films for thin film transistor gate electrode has been carried out by the growth with combination of micro-contact printing and metal organic chemical vapor deposition (MOCVD). This results in the elimination of optical lithography process. MOCVD has been employed to selectively deposit Co films on preformed OTS gate pattern by using micro-contact printing (${\mu}CP$). A hydrogenated amorphous silicon TFT with a Co gate selectively formed on SAMs patterned structure exhibited a subthreshold slope of 0.88V/dec, and mobility of $0.35cm^2/V-s$, on/off current ratio of $10^6$, and a threshold voltage of 2.5V, and thus demonstrating the successful application of the novel bottom-up approach into the fabrication of a-Si:H TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1550-1551
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• 2005

In this paper, to improve the well-known photo conductivity degradation of amorphous silicon, a new LASER immersion treatment has been applied. The optical feedback control LED backlighting system with integrated LCD panel sensor increased the color variation less than 0.008 ${\Delta}u'v'$ compared to 0.025 for a non-feedback system.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1271-1274
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• 2006

Integrated a-Si:H gate driver with high reliability has been designed and simulated. The proposed a-S:H gate driver has only one reset transistor under AC driving for P and output node. These reset transistors show much less degradation than those under DC driving. The simulation results show that the lifetime and response time are improved significantly compared with those of the prior circuit.