한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.747-751
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- 2006
Characterization of instability in a-Si:H TFT LCD utilizing copper as electrodes
- Kuan, Yung-Chia (CPT, Chunghwa Picture Tubes, LTD) ;
- Liang, Shuo-Wei (Research Alliance, Taiwan TFT LCD Association (TTLA) Industrial Technology Research Institute Bldg.) ;
- Chiu, Hsian-Kun (CPT, Chunghwa Picture Tubes, LTD) ;
- Sun, Kuo-Sheng (CPT, Chunghwa Picture Tubes, LTD)
- Published : 2006.08.22
Abstract
The hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) with copper as source and drain electrode has been fabricated to obtain its transfer characteristics and stressed with positive and negative bias to investigate the instability variation comparing to conventional MoW-Al based TFT device. The results show that there is no copper diffusion into active layer of a-Si:H TFT, even during the thermal process. In addition, a 15-inch XGA a Si:H TFT LCD display utilizing Cu as gate electrodes has been developed.
Keywords