• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.160-161
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• 2000

The 3rd order nonlinear properties show Optical bleaching (Saturation) and Reverse saturation in absorption aspect, whereas Self-focusing[3][4] and Self-defocusing in refraction aspect. Optical bleaching and Self-focusing phenomena of those properties in particular can be useful to make the optical beam spot size smaller for application on the higher optical storage density. (omitted)

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.229-229
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• 2007

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.102-104
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• 1996

The fabrication and analytical expression for the temperature dependent capacitance characteristics of inverted staggered hydrogenerated amorphous silicon thin film transistors(a-si :H TFT) from 303k to 363k were presented. The results show that the experimental capacitance-voltage characteristics at several temperatures are easily measured. Capacitance increased exponentially by gate voltage increase and decreased by temperature increase. C/C(max) ratio decreased at higher temperature, C/C(min) ratio increased at higher temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.697-699
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• 2005

The need for low cost flexible TFT display backplanes has focused attention on new processing techniques and materials. We have developed backplane technology based entirely on jet-printing, using a combination of additive and subtractive processing, and have applied this technique to both amorphous silicon and polymer TFT arrays.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1349-1351
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• 1997

TFT2DS was utilized to provide the usefulness as an analytic and design tool. In this paper, the general effects of channel length of an inverted staggered amorphous silicon thin film transistor on its characteristics were investigated. The results obtained from these experiments would be adopted to the optimized device designs and advanced simulations of their electrical properties.

• Journal of Information Display
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• 제4권3호
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• pp.17-21
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• 2003

A low temperature doping technique to be applied in poly-Si TFTs on plastic substrates was investigated. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of 120 $^{\circ}C$, and a sheet resistance of as low as 300 ${\Omega}$/sq. was obtained.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.325-327
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• 1997

TFT2DS was developed to provide the usability as an analytic and design tool. The static characteristics of a-Si TFTs demonstrated a good agreement between simulated and measured data. This paper shows that WDS can optimize the physical parameters of a-Si through sensitivity simulations and compute the static characteristics of a-Si TFTs.

• 전기학회논문지P
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• 제52권3호
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• pp.107-112
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• 2003

Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.19-19
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• 2007

Recently, we have developed p-i-n hydrogenated amorphous silicon (a-Si:H) single junction (SJ) thin film solar cells with RF (13,56MHz) plasma enhanced chemical vapor deposition (PECVD) systems, and also successfully fabricated the mini-modules (>300$cm^2$), using laser scribing technique to form an integrated series connection, The efficiency of a mini-module was 7.4% (Area=305$cm^2$, $I_{SC}$=0.25A, $V_{OC}$=14.74V, FF=62%).

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.151-152
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• 2012

라만(Raman) 분광법은 실리콘의 결정화도를 분석하는데 가장 유용하게 쓰이는 기법이다. 본 논문에서는 상압 플라즈마 화학기상증착법 (atmospheric pressure plasma-enhanced chemical vapor deposition, AP-PECVD)에 의해 형성된 실리콘 박막의 결정화도를 라만 분광법에 의해 분석하였다. 라만 분석 시, 조사하는 레이져의 파장에 따라서 실리콘 박막 내로의 침투깊이가 결정된다. 또한 레이져의 파워가 임계점을 넘게 되면, 레이져에 의한 실리콘의 결정화가 진행되는 것을 확인하였다.