Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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Development of a Low Temperature Doping Technique for Applications in Poly-Si TFT on Plastic Substrates

  • Hong, Wan-Shick (Dept. of Electronics Engineering, Sejong University) ;
  • Kim, Jong-Man (Dept. of Electronics Engineering, Sejong University)
  • Published : 2003.09.30
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Abstract

A low temperature doping technique to be applied in poly-Si TFTs on plastic substrates was investigated. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of 120 $^{\circ}C$, and a sheet resistance of as low as 300 ${\Omega}$/sq. was obtained.

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References

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