• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.34-39
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• 1995

Various silicon films were prepared by thermal- and UV photo-CVD processes. The reactants were SiH4, Si2H6, SiH2F2, SIF4, and H2. Silicon films grown at temperatures below $500 ^{\circ}C$ were either amorphous or crystalline depending on the process conditions, and the growth rates ranged between 5 and $80\AA$min. Crystallinity of the film was improved even at $250^{\circ}C$ when the film was grown by photo-CVD using fluoro-silanes as the reactants. Analysis of the film by RBS, SIMS, XRD, and ex-situ IR indicated that substrate surface was contaminated by oxygen and other impurities when the reactants contained neither hydrogen nor fluoro-silnanes, but when fluoro-silanes were used as reactants the silicon film was highly crystalline.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.335-338
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• 1998

We have calculated ultra-low energy silicon-self ion implantations and silicon damages through classical molecular dynamics simulation using empirical potentials. We tested whether the recently developed environment-dependent interatomic ptential (EDIP) was suitable for ultra low ion implantation simulation, and found that point defects formation energies were in good agrrement with other theoretical calculations, but the calculated vacancy migration energy was overestimated. The number of isolated defects that are produced by collision cascades are onlya few of the total number of defects, and fmost of the damages are concentrated into amorphous-like pockets.

• Journal of the Korean Ceramic Society
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• v.45 no.3
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• pp.142-145
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• 2008

The growth of amorphous silica nanowires by on-site feeding of silicon and oxygen is reported. The nanowires were grown on a nickel-coated oxidized silicon substrate without external silicon or oxygen sources. Transmission electron microscopy observation revealed that the nanowires, which have diameters of less than 50 nm and a length of several micrometers, were grown using a traditional vapor-liquid-solid mechanism. Blue photoluminescence was observed from these nanowires at room temperature. An approach to grow nanowires without external precursors may be useful when integrating nanowires into devices structures. This can benefit the fabrication of nanowire-based nanodevices.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.4
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• pp.568-573
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• 1996

The amorphous silicon films deposited by low pressure chemical vapor deposition are crystallized by the various annealing techniques including low-temperature furnace annealing and two-step annealing. Two-step annealing is the combination of furnace annealing at 600 [.deg. C] for 24 h and the sequential furnace annealing at 950 [.deg. C] 1h or the excimer laser annealing. It s found that two-step annealings reduce the in-grain defects significantly without changing the grain boundary structure. The performance of the poly-Si thin film transistors (TFTs) produced by employing the tow-step annealing has been improved significantly compared with those of one-step annealing. (author). 13 refs., 6 figs., 1 tab.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.123-124
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• 2007

3성분계 Ti-Si-C 코팅은 PECVD 기술에 의해 WC-Co 기판에 합성되었다. 이 연구에서 Ti-Si-C코팅에서의 비정질 silicon carbide 상의 효과는 XRD, XPS, TEM에 의해 분석되었다. TiC 결정의 입자크기는 비정질 silicon carbide의 침투 현상 때문에 Si의 함유량이 증가됨에 따라 감소된다. Ti-Si-C 코팅은 5.2%의 Si함유량에서 나노크기의 nc-TiC결정과 비정질 a-SiC로 이루어져 있고 최고 경도 33GPa와 탄성율 330GPa를 각각 보여주고 있다. 이 수치들은 순수한 TiC(-21GPa, 260Gpa)보다 눈에 띄게 높아졌다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.445-446
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• 2005

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.155-158
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• 2000

NMR study has been used for measuring precise quantity of the amorphous phase in the $Si_3N_4$powder. Care must be taken to allow the $^{29}$Si nuclear spin system to fully relax between pulses in order to make the signals proportional to the number of nuclei in each phase. $^{29}$Si MAS spectrum was decomposed into the three spectra of $\alpha$-, $\beta$-, and amorphous $Si_3N_4$assuming pseudo-Voigt function. Moreover, the Rietveld analysis of the powder X-ray diffraction data was performed to measure quantity of crystalline phases as $\alpha/\beta$ ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.29-35
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• 2023

Herein we investigated the effect of the conductive agent on the electrochemical performance of the SiOx anode. SiOx anodes have a relatively low volume expansion (~160%) compared to Pure-silicon, but have a problem in that they have a poor electrical conductivity characteristic. In this study, physical and electrochemical measurements were performed using two 0-dimensional amorphous carbon conductive agents with different crystallinity and surface area. The crystal structure of the conductive agents and the local graphitization degree were analyzed through XRD and Raman, and the surface area of the particles was observed through BET. In addition, the electrical performance according to the graphitization degree of the conductive agents was confirmed through a 4-point probe. As a result of the electrochemical cycle and rate performance, it was confirmed that the performance of SiOx using a conductive agent having a low graphitization degree and a high surface area was improved. The results in this study suggest that the graphitization degree and surface area of the amorphous carbon conductive agent may play an important role in the SiOx electrode.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.104-111
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• 2001

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4, CH_4,\;and\; B_2H_6$. Physical and chemical properties of a-SiC:H films grown with varing the ratio of $B_2H_6/(SiH_4+CH_4)$ were characterized with various analysis methods including scanning electron microscopy (SEM), X-ray diffractometry (XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, secondary ion mass spectroscopy (SIMS), UV absorption CH_4spectroscopy and electrical conductivity measurements. With the B-doping concentration, the doping efficiency and the micro-crystallinity were decreased and the film became amorphous when $B_2H_6/(SiH_4{plus}CH_4)$ was over $5{\times}10^{-3}$. The addition of $B_2H_6$ gas during deposition decreased the H content in the film by lowering the quantity of Si-C-H bonds. Consequently, the optical band gap and the activation energy of a-SiC:H films were decreased with increasing the B-doping level.