• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.108-113
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• 2015

In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.112-113
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• 2006

In this paper. we investigated a characteristic of holographic grating data erasure with non-polarized beam at amorphous chalcogenide As-Ge-Se-S thin film. A sample of holographic grating data was formed with DPSS laser for setup. Then, the erasure process was performed with He-Ne laser vertically at sample. As-Ge-Se-S(single layer). Ag/As-Ge-Se-S(double layer) and As-Ge-Se-S/Ag/As-Ge-Se-S(multi-layer) are manufactured to compare their characteristic of erasure.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.219-226
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• 2000

Amorphous Ge20As20Se60 chalcogenide thin films were prepared by spin coating technique from mixed solutions of As40Se60 and Ge40Se60 dissolved in ethylenediamine. Films were prepared at a roating speed of 3500 rpm and spinning time was 10 second and heat-treateed at 27$0^{\circ}C$ for 1 hour. The resulting film thickness and RMS roughness were approximately 340 nm and 15$\AA$. Photostructure changes were investigated with 514.5nm Ar+ laser irradiation and heat-treatment. After Ar+ laser irradiation, transmittance and transmission efficiency decreased respectively up to 24.9% at 2.43 eV and 67.5% at 3.27 eV, and absorption edge shifted toward long wavelength. Optical bandgap changed from 2.03 to 1.83 eV, and absoprtion coefficient and absorption efficiency increased up to 0.33$\times$105cm-1 at 3.37eV and 88.3% at 1.31 eV, respectively. These photodarkening state were recovered reversibly by heat-treatment at 27$0^{\circ}C$ for 1 hour. Photodarkening and thermal bleaching effects by laser irradiation and heat-treatment revealed reversible amorphous-to-amorphous transition varying only coordination number.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1066-1069
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• 2004

This paper shows the characteristic of diffraction efficiency on film of amorphous AsGeSeS according to Ag doping. We compare amorhous AsGeSeS with the characteristics of AsGeSeS/Ag (10nm) and AsGeSeS/Ag (20m). We made film such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8on$ the basis of 633nm, which is wavelength of recording laser(He-Ne). The highest diffraction efficiency on AsGeSeS film is $\lambda/4$, followed by $\lambda/2$, $\lambda$, $\lambda/8$. In the case of Ag 10nm, it is followed by $\lambda/4$, $\lambda/2$, $\lambda$, $\lambda/8$. On the occasion of Ag 20nm, it seems that the highest is $\lambda/2$, followed by $\lambda$, $\lambda/4$, $\lambda/8$. In other words, it appears that the highest point on AsGeSeS(158nm) single layer is 0.09%, the one of AsGeSeS(158nm)/Ag(10nm) is 1.6%, and the point of AsGeSeS(316nm)/Ag(20nm) is3.2%. Comparing the highest point in each case, we conclude that there is a distinctive increase in diffraction efficiency according the effect on Ag doping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.73-76
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• 1992

The amorphous phase of bulk and thin film in the As-Se-S-Ge system was observed by X-ray diffraction. Thermal analysis using DSC, DTA and TGA method has been used for the determination of the glass transition temperature, Tg. The glass transition temperature, Tg for the composition were $238^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$ and $231^{\circ}C$ in $AS_{40}Se_{25}S_{25}Ge_{10}$ and $As_{40}Se_{50}Ge_{10}$. The phase seperation of continuous phase and dispersive phase was observed by the optical texture of the polarizing microscope. Also, the glass transition temperature of the thin film was near $200^{\circ}C$. As the results of SEM-EDS analysis, the phase transition of the films by thermal treatment and light illumination was the amorphous to amorphous.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1262-1264
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• 1993

An amorphous $Se_{75}Ge_{25}$ thin film as inorganic resist for the focused ion beam lithography(FIBL) is investigated. This film offers an attractive potential alternative to polymer resists because of a number of advantages, such as the possibility of preparing physically uniform films of thickness as small as 200A and obtaining both positive and negative resist action in the same material, compatibility with dry processing, the sensitivity on optical, e-beam and ion beam exposure, the high-temperature stability, etc. In previous paper, the defocused ion beam-induced characteristics in a-$Se_{75}Ge_{25}$ film has been propose. Practically it is neccesary to know the relation with resist and source ions. For the purpose, the ion stopping power, the ion projected range and ion transmission coefficiency are studied. In this paper, the theoretically calculated values of parameters are presented and compared with theory.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.11
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• pp.106-112
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• 1992

In this paper, we analyze the structure characteristics of $As_{40}Se_{50-x}S_{x}Ge_{10}$ system bulk and thin films. As the results of XRD patterns, it identified amorphous state. In order to find the glass transition temperature($T_g$), crystallization($T_c$) and melting point ($T_m$)of bulk sample, it ascertained that TS1gT is 238$^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$, and 231$^{\circ}C$ in $As_{40}Se_{25}S_{25}Ge_{10}$ & $As_{40}Se_{50}Ge_{10}$ following the thernal analysis by DSC, DTA, & TGA method. Also it was confirmed the phase seperation of continuous phase and dispertion phase by the optical texture of polarizing microscope and $T_g$ near 20$0^{\circ}C$ in thin film. Therefore, it was found that it occurs the phase seperation of Ge-rich dontinuous phase and Se-rich dispersion phase following the EDS analysis of thin film and the surface SEM photograph.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.91-94
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• 1988

This paper is investigated on the diffraction grating formation of the amorphous As-Se-S-Ge films. AS$\_$40/Se$\_$15/S$\_$36/Ge$\_$10/ film of thickness 0.76 $\mu\textrm{m}$ has achieved a high diffraction efficiency of 4.6%. In this film, high diffraction efficiency is increased to 18% by chemical etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.77-78
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• 2007

In this paper, we suppose that the 1-dimensional photonic crystal using holography lithography. We used Ag doped amorphous AsGeSeS which belongs in the chalcogenide materials have sensitive photoluminescence property. The purpose of this experiment is the process to complete 3-D photonic crystal after making 2-D photonic crystal. The lattice formation was made an observation by irradiating He-Ne laser with the AsGeSeS film leaned obliquely. Then, by measuring formed diffraction beam, the diffraction lattice was calculated.