• 한국추진공학회지
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• 제26권1호
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• pp.12-19
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• 2022

덕티드 로켓의 가스발생기에 사용되는 추진제는 연료과농 추진제로서, 일반적인 고체 로켓 추진제에 비하여 과량의 금속연료와 소량의 산화제를 포함한다. 본 논문에서는 연료과농 추진제를 제조하기 위하여 보론 분말과 MgAl(Magnesium-Aluminium Alloy)를 적용하였다. 이 금속연료를 적용한 추진제의 특성을 분석하였고, 이를 통하여 최적의 조성을 연구하였다. 추진제의 연소생성물 분석을 통하여 보론 비드가 아닌 미립의 보론 분말로도 가스발생기용 연료과농 추진제가 가능함을 확인하였다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2017년도 임시총회 및 하계학술연구발표회
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• pp.147-147
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• 2017

• 한국세라믹학회지
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• 제46권1호
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• pp.53-57
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• 2009

The h-BN powder was synthesized by amorphous $B_2O_3$ and activated carbon at $1550^{\circ}C$ in nitrogen atmosphere, whose properties were examined according to $MgB_6$ addition. Amount of $MgB_6$ addition was varied in the range of $0{\sim}$10\;wt% of the initial mixture. It was observed that $MgB_6$ addition led to an increase in the amount and the grain size of h-BN and decrease in the amount of $B_4C$ forming. When $MgB_6$ added 5 wt%, the amount and crystallinity of h-BN increased as the holding time at the synthesis temperature was prolonged. It was also confirmed that the regularity of three-dimensional ordering of h-BN increases.

• Journal of Welding and Joining
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• 제9권4호
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• pp.28-39
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• 1991

The change of microstructure in the bonded interlayer and mechanical properties of the joints were investigated during Transient Liquid Phase Diffusion Bonding(TLP bonding) of STS304/SM17C and STS304/SM45C couples using Ni base amorphous alloys added boron and prepared alloy as insert metal. Main experimental results obtained in this study are as follows: 1) Isothermal solidification process was completed much faster than theoretically expected time, 14ks at 1473K temperature. Its completion times were 3.6ks at 1423K, 2.5ks at 1473K and 1.6ks at 1523K respectively. 2) As the concentration of boron in the insert metal increased, the more borides were precipitated near bonded interlayer and grain boundary of STS304 side during isothermal solidification process, its products were $M_{23}P(C,B)_6}_3)$ The formation of grain boundary during isothermal solidification process was completed at structural carbon steel after starting the solidfication at STS304 stainless steel. 4) The highest value of hardness was obtained at bonded interface of STS304 side. The desirable tensile properties were obtained from STS304/SM17C, STS304/SM45C using MBF50 and experimentally prepared insert metal with low boron concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.905-908
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• 2000

The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

• 전자공학회논문지A
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• 제32A권6호
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• pp.51-58
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• 1995

Major limiting factors in the linear scaling down of the shallow source/drain junction are the boron channeling effect and the Si cosumption phenomenon during silicidation. We can solve these problems by As preamorphization of the predeposited amorphous Si layer. The predeposited amorphous Si layer made the junction depth decrease to nearly the thickness value of the layer and was effectively utilized as the cosumed Si source during Ti silicidation. This method was applied to the actual fabrication of PMOSFET through SES (selectricely etched Si) techology.

• 한국추진공학회지
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• 제18권5호
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• pp.12-18
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• 2014

공기흡입형 추진기관의 가스발생기에 사용하기 위한 연료과농(Fuel-rich) 고체 추진제의 특성에 대한 연구를 수행하였다. 일반적인 고체 추진제는 평균 60%이상의 산화제를 포함하는 데, 연료과농 고체 추진제를 개발히기 위해 산화제 함량을 30%내외로 낮추고 매우 높은 부피당 열량을 가지는 비정질 붕소를 입자화(Bead)하여 금속연료 함량을 증가시켜 고체 추진제의 제조 공정성 및 연소속도 특성을 확인하였다. 과립화붕소의 입도가 작을수록 추진제 제조 공정에서 초기 점도가 높아지고, 입도가 클수록 연소속도 및 압력지수가 증가하는 것을 확인할 수 있었다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.90-91
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• 2003

Amorphous magnetic materials with competing magnetic interactions are the subject of current interest. Critical behaviour studies have been performed in order to understand the nature of the phase transition at the Curie point (T$\sub$c/) and type of magnetic ordering below the T$\sub$c/. In some cases there exists a temperature interval in which the magnetic system consists of ferromagnetic grains separated by the paramagnetic interlayers. Magnetic properties of nanoparticles embedded in amorphous matrix also are the subject of recent interest. While these materials exhibit excellent soft magnetic properties at room temperature, some of them have been found to be superparamagnetic in the temperature range above the T$\sub$c/ of the matrix. Thus the role of different magnetic phases in the intergrain magnetic coupling can possibly be taken apart in a sufficiently broad temperature range and investigated separately. In particular materials with competing magnetic exchange interactions show characteristics of enhanced magnetoresistance and softer magnetic properties when magnetic nanocrystals are dispersed in amorphous matrix. We expect careful magnetic measurements in the vicinity of T$\sub$c/ would throw some light on magnetic behaviour of above materials. We present here the FMR analysis of Fe$\sub$82/Mn$\sub$8-x/B$\sub$x/Zr$\sub$10/ alloy near the Curie point.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• Progress in Superconductivity
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• 제9권1호
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• pp.74-79
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• 2007

We characterized the highly refined boron precursor powders which were attrition milled for different milling times. $MgB_2$ powder precursor was formed from elemental crystalline Mg and amorphous B powder. The microstructure was investigated by SEM. SEM results indicate that the size of the milled powders was reduced with increasing milling time, which were varied from 0 to 8 hours. We also studied thermal behavior of the starting precursor by DSC as a function of milling time. The thermal behavior of the powder precursors was influenced by milling time. In order to determine the thermal events at DSC peaks, we annealed the milled powder mixture at $600^{\circ}C$ and $650^{\circ}C$ under protective gas and then analyzed the formation of $MgB_2$ by the XRD. We observed that superconducting $MgB_2$ phase was formed at lower temperature by the longer high energy milling. These results show that the high energy milling of the boron precursor powder can improve the reactivity for the formation of $MgB_2$.