Fabrication of deep submicron PMOSFET with the source/drain formed by the mothod of As-Preamorphization though the predeposited amorphous Si layer

증착된 비정질 실리콘층을 통한 As-Preamorphization 방법으로 형성된 소오스/드레인을 갖는 deep submicron PMOSFET의 제작

Major limiting factors in the linear scaling down of the shallow source/drain junction are the boron channeling effect and the Si cosumption phenomenon during silicidation. We can solve these problems by As preamorphization of the predeposited amorphous Si layer. The predeposited amorphous Si layer made the junction depth decrease to nearly the thickness value of the layer and was effectively utilized as the cosumed Si source during Ti silicidation. This method was applied to the actual fabrication of PMOSFET through SES (selectricely etched Si) techology.