• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.25-34
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• 2003

Deposition behavior of hard amorphous carbon film was investigated by molecular dynamic simulation using Tersoff potential which was suggested for the interaction potential between carbon atoms. When high energy carbon atoms were collided on diamond (100) surface, dense amorphous carbon film could be obtained. Physical properties of the simulated carbon film were compared with those of the film deposited by filtered cathodic arc process. As in the experimental result, the most diamond-like film was obtained at an optimum kinetic energy of the incident carbon atoms. The optimum kinetic energy was 50 eV, which is comparable to the experimental observation. The simulated film was amorphous with short range order of diamond lattice. At the optimum kinetic energy condition, we found that significant amount of carbon atom were placed at a metastable site of distance 2.1 $\AA$. By melting and quenching simulation of diamond lattice, it was shown that this metastatic peak is Proportional to the quenching rate. These results show that the hard and dense diamond-like film could be obtained when the localized thermal spike due to the collision of high energy carbon atom can be effectively dissipated to the lattice.

• Journal of IKEEE
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• v.22 no.1
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• pp.213-215
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• 2018

In this study, we fabricate amorphous carbon thin films on silicon substrates by DC sputtering method and investigate the optical property and photothermal characteristics. A representative amorphous carbon thin film has a absorption value of 97% at a wavelength of 1000 nm and shows a temperature increase of $3^{\circ}C$ from $21.1^{\circ}C$ to $24.1^{\circ}C$ during white light irradiation. In addition, the amorphous carbon film has a heating rate four times higher than that of the substrate during light irradiation for 50 sec.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.31-36
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• 2013

For the simplification of doping process in amorphous carbon film, arsenic (As) ions were implanted on the nucleated silicon wafer before the growth process. Then amorphous carbon films were grown at the condition of $CH_4/H_2=5%$ by microwave plasma chemical vapour deposition. Because the implanted seeds were grown at the high temperature and the implanted ions were spread, it was possible to reduce the process steps by leaving out the annealing process. When the implanted amorphous carbon films were electrically characterized in diode configuration, field emission current of $0.1mA/cm^2$ was obtained at the applied electric field of about $2.5V/{\mu}m$. The results show that the implanted As ions were sufficiently doped by the self-annealing process by using the growth after implantation.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.333-338
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• 2011

In this work, we have fabricated the amorphous carbon (a-C:H) thin film by using unbalanced magnetron sputtering method with the magnetron source of inside/outside electromagnetic coils as the protective coating materials. We have investigated the tribological properties of amorphous carbon films prepared with various electromagnetic coil currents for the change of the plasma density, such as hardness, friction coefficient, adhesion, and surface roughness. Raman and HRTEM were used to study the microstructure of carbon films. In the result, the hardness and adhesion properties of a-C:H films were improved with increasing electromagnetic coil current due to the increase of the plasma density to the substrate. Thus, these results can be explained by the increase of $sp^2$ bonding and cluster number in the amorphous carbon film, related to the improved bombardment around substrate and the increased substrate temperature.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.122-127
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• 2007

In this research, amophous carbon films (a-C, a-C:H, a-C:N) were synthesized by closed-field unbalanced magnetron (CFUBM) sputtering using graphite target. We also fabricated amorphous carbon films with applying negative DC bias voltage of 200 V in during the deposition in working pressure. Also, a-C:H and a-C:N films was synthesized by adding acethylene($C_{2}H_{2}$) and nitrogen(N) gases of 4 and 3 sccm into Ar pressure. The a-C:H film synthesized at -200 V exhibited the maxumum hardness of 26.3 GPa, the smooth surface of 0.1 nm and the good adhesion of 30.5 N. And a-C:N film synthesized at -200 V exhibited at -200 V exhibited the best adhesion of 32 N. This paper examined the effect of $C_{2}H_{2}$ gas, $N_{2}$ gas and negative DC bias voltage as the parameter for improving the physical properties and the relation between structral and physical properties of carbon films.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.85-85
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• 1996

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.69-70
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• 2015

탄소는 독성이 없고 친환경적이며 물리화학적 안정성 및 내마모성 등 많은 장점을 가지고 있어 많은 연구들이 진행 되고 있다. 바이오영역에서도 많은 연구들이 진행되어 왔지만 실제 응용된 것은 많지 않다. 본 연구에서는 탄소 박막표면에 -CHx 화학구조가 세포 성장에 어떤 영향을 미치는지 규명 하고자 하였다.

• Applied Chemistry for Engineering
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• v.19 no.3
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• pp.322-325
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• 2008

3,3-Dimethyl-1-butene ($C_6H_{12}$) monomer was deposited using a plasma-enhanced chemical vapor deposition (PECVD) instrument. The more the R.F. power/pressure ratio in FT-IR spectrum, the less the hydrogen quantity and the dangling bond in amorphous carbon films observed so that the mechanical property of the films are improved related to the density. Also, with the increase D peak in Raman spectrum is increased and the ring structure's films are produced. According to these results, hardness and modulus are 12 GPa and 85 GPa, respectively. The refractive index (n) and extinction coefficients (k) of the deposited films are increased with the increase in a power/pressure ratio.

• Applied Chemistry for Engineering
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• v.26 no.1
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• pp.80-85
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• 2015

Silicon/carbon composites as anode materials for lithium-ion batteries were examined to find the cycle performance and capacity. Silicon/carbon composites were prepared by a two-step method, including the magnesiothermic reduction of SBA-15 (Santa Barbara Amorphous material No. 15) and carbonization of phenol resin. The electrochemical behaviors of lithium ion batteries were characterized by charge/discharge, cycle, cyclic voltammetry and impedance tests. The improved electrochemical performance attributed to the fact that silicon/carbon composites suppress the volume expansion of the silicon particles and enhance the conductivity of silicon/carbon composites (30 ohm) compared to that of using the pure silicon (235 ohm). The anode electrode of silicon/carbon composites showed the high capacity approaching 1,348 mAh/g and the capacity retention ratio of 76% after 50 cycles.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1211-1214
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• 2003

The film is prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) employing CH$_4$ and H$_2$ gases. It is deposited by the control of microwave plasma power, gas flow ratio, deposition pressure, and In-situ thermal treatment temperature. The structure of a-C:H (hydrogenated amorphous carbon) thin film is analysed by FT-IR spectroscopy. The fraction sp$^3$ versus sp$^2$ bonding is very important to clear up the surface and interrace of a-C:H film properties such as nano-scale friction behavior. The sp$^3$ versus sp$^2$ bonding of a-C:H thin film is dependent on the deposition conditions, therefore. nano-scale friction behavior is dependent on the deposition conditions.