• Title/Summary/Keyword: Ammonia($NH_3-N$)

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Fabrication of soluble organic thin film transistor with ammonia ($NH_3$) plasma treatment

  • Kim, Dong-Woo;Kim, Doo-Hyun;Kim, Keon-Soo;Kim, Hyoung-Jin;Choi, Hong;Lee, Dong-Hyeok;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.566-567
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    • 2009
  • We have examined the silicon nitride ($SiN_x$) as gate insulator with the ammonia ($NH_3$) plamsa treatment for the soluble derivatives of polythiophene as p-type channel materials of organic thin film transistors (OTFTs). Fabrications of the jetting-processed OTFTs with $SiN_x$ as gate insulator by $NH_3$ plasma treatment can be similar to performance of OTFTs with silicon dioxide ($SiO_2$) insulator.

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Factors Controlling the Losses of Urea through Ammonia Volatilization (암모니아 휘산에 의한 요소비료의 손실에 미치는 요인)

  • Kim, Su-Jung;Yang, Jae E.;Cho, Byong-Ok;Kim, Jeong-Je;Shin, Young-Oh
    • Korean Journal of Soil Science and Fertilizer
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    • v.40 no.1
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    • pp.77-82
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    • 2007
  • Volatilization of ammonia from N fertilizer is the major mechanism of N losses that occur naturally in all soils and is influenced by numerous soils, environmental and N fertilizer management factors. Vegetables are often damaged by $NH_3$ gas volatilized from the high rates of N fertilizer. We determined the rate of $NH_3$ volatilization from urea applied to surface of the alluvial soil (coarse silty, mixed, mesic family of Dystric Fluventic Eutrochrepts, Ihyeon series) as affected by fertilizer management factors such as rate of urea application, irrigation schedule and temperature. The $NH_3$ volatilization was triggered about 3 d after urea application and reached at maximum level in general within 15 days. Cumulative amounts of 3.0, 4.4, and 8.0 kg of $NH_3$ N after 17 d were volatilized at application rates of 200, 400, and $600kg\;N\;ha^{-1}$, respectively, which were equivalent to the N losses of 15.0, 10.9, and 13.0% of N applied. Masses of N volatilization were 5, 21, 75 and $87kg\;NH_3\;N\;ha^{-1}$ at 5, 8, 22, and 28, respectively. Total amounts of 21.3, 21.2, and $16.6kg\;N\;ha^{-1}$ were volatilized at control, 5 and 10 mm water irrigation before fertilization, respectively. However, those at 5 mm irrigation after fertilization were only $10.44kg\;N\;ha^{-1}$. Results showed that urea loss can be avoided by incorporating with the recommended level, applying when temperatures are low or irrigating immediately to carry the urea into soil.

Assessment of chemical purity of [13N]ammonia injection: Identification of aluminium ion concentration

  • Kim, Ho Young;Park, Jongbum;Lee, Ji Youn;Lee, Yun-Sang;Jeong, Jae Min
    • Journal of Radiopharmaceuticals and Molecular Probes
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    • v.4 no.2
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    • pp.80-84
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    • 2018
  • $[^{13}N]$Ammonia or $[^{13}N]NH_3$ is one of the most widely used PET tracer for the measurement of MBF. To produce $[^{13}N]NH_3$, devarda's alloy which contains aluminum, copper and zinc is used for the purpose of reduction from $^{13}N$-nitrate/nitrite to $[^{13}N]NH_3$. Since aluminum has neurotoxicity and renal toxicity, the amount of it should be carefully limited for the administration to the human body. Although USP and EP provide a way to identify the aluminum ion concentration, there are some difficulties to perform. Therefore, we tried to develop the modified method for verifying aluminum concentration of test solution. We compared color between test and standard solutions using chrome azurol S in pH 4.6 acetate buffer. We also tested color change of test and standard solutions according to pH, amounts and the order of reagent and time difference These results demonstrated that the color change of the solution can reflect quantitatively measure aluminum ion concentration. We hope the method is to be used effectively and practically in many sites where $[^{13}N]NH_3$ is produced.

Demonstration Study on Ammonia Stripping in Electronic Industry Wastewater with High Concentrations of Ammonia Nitrogen (고농도 암모니아를 함유한 전자 폐수의 암모니아 탈기 실증 연구)

  • Jae Hyun Son;Younghee Kim
    • Clean Technology
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    • v.29 no.4
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    • pp.297-304
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    • 2023
  • The rapid advancement of the high-tech electronics industry has led to a significant increase in high-concentration ammonia wastewater. Various methods have been attempted to reliably treat wastewater containing high concentrations of ammonia, but no successful technology has yet been developed and applied. In this study, the removal efficiency and characteristics of ammonia nitrogen was evaluated according to changes in temperature, air loading rate, and liquid loading rate using a closed circulation countercurrent packed tower type demonstration facility for wastewater containing high concentrations of ammonia generated in the high-tech electronics industry. The temperature was varied while maintaining operating conditions of a wastewater flowrate of 20.8 m3 h-1 and an air flow rate of 18,000 Nm3 h-1. The results showed that at temperatures of 45,50,55, and 60℃, the removal efficiencies of ammonia nitrogen (NH3-N) were 87.5%, 93.4%, 96.8%, and 98.7%, respectively. It was observed that temperature had the most significant impact on the removal efficiency of NH3-N under these conditions. As the air loading rate increases, the removal rate also increases, but the increase in removal efficiency is not significant because droplets from the absorption tower flow into the stripping tower. Even if the liquid loading rate was changed by ±30%, the removal rate did not change significantly. This does not mean that the removal rate was unaffected, but was believed to be due to the relatively high air load rate. Through demonstration research, it was confirmed that ammonia stripping is a reliable technology that can stably treat high-concentration ammonia wastewater generated in the high-tech electronics industry.

Influence of Ammonia Solvation on the Structural Stability of Ethylene Cluster Ions

  • Jung Kwang Woo;Choi Sung-Seen;Jung Kwang Woo;Hang Du-Jeon
    • Bulletin of the Korean Chemical Society
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    • v.13 no.3
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    • pp.306-311
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    • 1992
  • The stable structures of pure ethylene and mixed ethylene-ammonia cluster ions are studied using an electron impact ionization time-of-flight mass spectrometer. Investigations on the relative cluster ion distributions of $(C_2H_4)_n(NH_3)_m^+$ under various experimental conditions suggest that $(C_2H_4)_2(NH_3)_3^+$ and $(C_2H_4)_3(NH_3)_2^+$ ions have the enhanced structural stabilities, which give insight into the feasible structure of solvated ions. For the stable configurations of these ionic species, we report an experimental evidence that both $(C_2H4)_2^+(C_2H_4)_3^+$ clusters as the central cations provide three and two hydrogen-bonding sites, respectively, for the surrounding $NH_3$ molecules. This interpretation is based on the structural stability for ethylene clusters and the intracluster ion-molecular rearrangement of the complex ion under the presence of ammonia solvent molecules.

Hybrid MBE Growth of Crack-Free GaN Layers on Si (110) Substrates

  • Park, Cheol-Hyeon;O, Jae-Eung;No, Yeong-Gyun;Lee, Sang-Tae;Kim, Mun-Deok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.183-184
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    • 2013
  • Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was >99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

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Removal of Ammonium-Nitrogen {$NH_4^+$ -N) Using Immobilized Nitrifier Consortium in PVA(PolyvinylalcohoI) (PVA에 고정화된 Nitrifier Consortium을 이용한 암모니아성 질소의 제거)

  • 서재관;서근학;김성구
    • KSBB Journal
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    • v.14 no.1
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    • pp.51-57
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    • 1999
  • The immobilization of nitrifier consortium was carried out for the application to recirculating aquaculture system(RAS). The abilities of $NH_4^+$-N removal by immobilized nitrifier consortia prepared with boric acid treated, ethanol treated, ad freezing-thawing treated PVA beads at the concentration 15% were examined. To identify the possibility of applying the beads in the fluidized bed reactor, characteristics of beads were evaluated. The suitable bead was boric acid treated beads which had highest ammonia removal rate of 16.09 g/$m^3$/day. It took 12 days for nitrifier consortium immobilized beads to be stable for the removal of $NH_4^+$-N. Life spans of the beads were more than three months with aggressive aeration in the fluidized ed reactor when nitrifier consortia immobilized in PVA beads were used. In order to apply the nitrifier consortium immobilized beads to aquaculture facility, the continuous reactor was used for 49 days with synthetic aquacultural water containing 2 mg/L ammonia. The highest ammonia removal rate of 31.87 g/$m^3$/day was observed when hydraulic residence time was 0.6 hour(36min.).

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Nitritation of Anaerobic Digester Supernatant from Sludge Processing in MWTP (하수처리장 혐기성 소화조 상징액의 아질산화 반응 연구)

  • Gil, Kyung-Ik
    • Journal of Korean Society on Water Environment
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    • v.22 no.3
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    • pp.540-545
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    • 2006
  • The anaerobic digester supernatant (ADS) with high $NH_4-N$ concentration often results in a $NH_4-N$ overloading to the mainstream process of municipal wastewater treatment plant (MWTP). The nitrogen removal from the ADS is therefore important in order to achieve a stable mainstream process performance as well as to prevent $NH_4-N$ overloading due to ADS. Recently because of several advantages compared to the full nitrification, many works have shown interests in controlling the build-up of $NO_2-N$ in nitritation processes. The application of nitritation could save the aeration power compared to the full nitrification processes. In addition, the denitrification of $NO_2-N$ could reduce organic carbon requirements compared to the $NO_3-N$ denitrification. The purpose of this research was to find out the characteristics of the ADS nitritation and $NO_2-N$ accumulating factors from the laboratory reactor study. As a result based on the long-term laboratory experiment, it can be concluded that the degree of nitritation was closely related with the availability of alkalinity, free ammonia (FA), solid retention time (SRT) and solid concentration in the nitritation reactor.

Enhanced nitrogen removal from high-strength ammonia containing wastewater using a membrane aerated bioreactor (MABR)

  • Arindam Sinharoy;Ji-Hong Min;Chong-Min Chung
    • Membrane and Water Treatment
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    • v.15 no.2
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    • pp.59-66
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    • 2024
  • This study evaluated the performance of a membrane aerated biofilm reactor (MABR) for nitrogen removal from a high-strength ammonia nitrogen-containing wastewater. The experimental setup consisted of four compartments that are sequentially anaerobic and aerobic to achieve complete nitrogen removal. The last compartment of the reactor setup contained a membrane bioreactor (MBR) to reduce sludge production in the system and to obtain a better-quality effluent. Continuous experiment over a period of 47 days showed that MABR exhibited excellent NH4+-N removal efficiency (99.5%) compared to the control setup without MABR (56.5%). The final effluent NH4+-N concentration obtained in the MABR was 2.99±1.56 mg/L. In contrast to NH4+-N removal, comparable TOC removal values in the MABR and the control reactor (99.2% and 99.3%, respectively) showed that air supply through MABR is much more critical for denitrification than for organic removal. Further study to understand the effect of air supply rate and holding pressure on NH4+-N removal in MABR revealed that an increase in both these parameters positively impacted reactor performance. These parameters are related to oxygen supply to the biofilm formed over the membrane surface, which in turn influenced NH4+-N removal in MABR. Among the two different strategies to control biofilm over the membrane surface, results showed that scouring for a duration of 10 min on a weekly basis, along with mixing air supply, could be an effective method.

Combined Effects of Acidification, Zeolite, and Biochar on Ammonia Emission and Nitrate Leaching from Pig Slurry

  • Sang-Hyun Park;Muchamad Muchlas;Tae-Hwan Kim;Bok-Rye Lee
    • Journal of The Korean Society of Grassland and Forage Science
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    • v.44 no.2
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    • pp.133-139
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    • 2024
  • This study aimed to evaluate the efficiency of combining acidification with adsorbents (zeolite and biochar) to mitigate the environmental impacts of pig slurry, focusing on ammonia (NH3) emission and nitrate (NO3-) leaching. The four treatments were applied: 1) pig slurry (PS) alone as a control, 2) acidified PS (AP), 3) acidified pig slurry with zeolite (APZ), and 4) acidified pig slurry with biochar (APB). The AP mitigates NH3 emission and NO3- leaching compared to PS alone. Acidification reduced the cumulative NH3 emission and its emission factor by 35.9% and 12.5%, respectively. The APZ and APB increased NH4+-N concentration, with the highest level in APB, compared to AP. The NH4+ adsorption capacity of APB (0.90 mg g-1) was higher than that of APZ (0.63 mg g-1). The APB and APZ treatments induced less NH3 emission compared to AP. The cumulative NH3 emission was reduced by 12.2% and 27.6% in APZ and APB, respectively, compared to AP treatment. NO3- leaching began to appear on days 12 and 13, and its peak reached on days 16 and 17, which were later than AP. The cumulative NO3- leaching decreased by 17.7% and 25.0% in APZ and APB, respectively, compared to AP treatment. These results suggest that combining biochar or zeolite with acidified pig slurry is an effective method to mitigate NH3 emission and NO3- leaching, with biochar being particularly effective.