• Journal of information and communication convergence engineering
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• 제9권4호
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• pp.461-465
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• 2011

An aluminum doped zinc oxide (AZO) film for front contacts of thin film solar cells, in this work, were deposited by r.f. magnetron sputtering, and then etched in diluted hydrochloric acid solution for different times. Effects of surface texturing on the electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. After texturing, the spectral haze at the visible range of 400 ~750 nm increased substantially with the etching time, without a change in the resistivity. The conversion efficiency of amorphous Si solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density ($J_{sc}$), compared to cell with flat AZO films.

• 한국응용과학기술학회지
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• 제31권4호
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• pp.731-739
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• 2014

투명 전도성 산화물로서 알루미늄과 붕소가 함께 도핑된 아연산화물(AZOB)이 $900^{\circ}C$에서 분무 열분해법에 의해 제조되었다. 얻어진 마이크론 크기의 AZOB 분말은 알루미늄, 붕소 및 아연의 수용액으로부터 얻어진다. 분무 열분해로 얻어진 마이크론 크기의 AZOB 분말은 $700^{\circ}C$에서 두 시간동안의 후 소성 과정과 24 시간 동안의 볼 밀링을 통해 나노 크기의 AZOB으로 변환된다. AZOB을 구성하는 일차 입자의 크기를 Debye-Scherrer 식에 의해 계산하였고 압축된 AZOB 펠렛의 표면 저항을 측정하였다.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.711-715
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• 2007

Properties of organic light-emitting diodes (OLEDs) with aluminum-doped zinc oxide (ZnO:Al) anodes showed different behaviors from OLEDs with indium tin oxide (ITO) anodes according to driving conditions. OLEDs with ITO anodes gave higher current density and luminance in lower voltage region and better EL and power efficiency under lower current density conditions, However, OLEDs with ZnO:Al anodes gave higher current density and luminance in higher voltage region over about 8V and better EL and power efficiency under higher current density over $200mA/cm^2$. These seemed to be due to the differences in conduction properties of semiconducting ZnO:Al and metallic ITO. OLEDs with ZnO:Al anodes showed nearly saturated efficiency under high current driving conditions compared with those of OLEDs with ITO anodes. This meant better charge balance in OLEDs with ZnO:Al anodes. These properties of OLEDs with ZnO:Al anodes are useful in making bright display devices with efficiency.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.32-36
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• 2018

For various oxygen($O_2$) to argon(Ar) gas ratio, aluminum-doped zinc oxide(AZO) films were deposited for 3 min at different duty ratio by changing reverse pulse times. As the duty ratio increased, the thickness of the AZO film decreased and the sheet resistance increased. It can be concluded that When sputtering AZO Thin film, oxygen interfered with sputtering. When the reverse time was increased, the thickness of AZO was proportional to the real sputtering time and decreased. From the optical transmittance and sheet resistance, it was possible to obtain a higher figure of merits of AZO at a lower reverse pulse time. Even at the short reversed pulse time, it can be concluded that the accumulated charges on the AZO target are completely cleared. At a lower reverse pulse time, pulsed-DC sputtering of AZO is expected to be used instead of DC sputtering in the deposition of transparent conductive oxide(TCO) films without any degradation in thickness and structural/electrical characteristics.

• Journal of Electrical Engineering and Technology
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• 제8권1호
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• pp.163-167
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• 2013

Aluminum doped zinc oxide (AZO) thin films have been prepared on the glass substrates (Corning 1737) by sol-gel dip-coating method employing zinc acetate and aluminum chloride hexahydrate for the transparent conducting oxide (TCO) applications. 1 at% Al was doped to the ZnO thin films. The effects of post-heating temperature on the crystallization, optical and electrical properties of the AZO films have been investigated. Experimental results showed that post-heating temperature affected the microstructure, electrical resistance, and optical transmittance of the AZO films. From the X-ray diffraction analysis, all films have hexagonal wurtzite crystal structure. Optical transmittance spectra of the AZO films exhibited transmittance higher than about 80% within the visible wavelength region and the optical direct band gap ($E_g$) of these films was increased with increasing post-heating temperature. A minimum resistivity of $2.5{\times}10^{-3}{\Omega}cm$ was observed at $650^{\circ}C$.

• 한국결정성장학회지
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• 제8권4호
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• pp.592-598
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• 1998

ZnO($Al_2O_3\;2%$ 2% doped) 산화물 타겟과 금속 Zn(Al 2% doped) 타겟을 사용하여 반응성 직류 마그네트론 스퍼터링법으로 산소 가스 및 인가 전력을 조절하면서 AZO(Aluminum doped Zine Oxide) 막을 증착하였다. 비저항과 평균 투과율을 고려할 때 최적의 투명전도성을 보이는 조건은 산화물 타겟의 경우 산소가스의 비가 $0.5{\times}10^{-2}~1.0{\times}10^{-2}$범위이며, 금속 타겟의 경우 인가전력 0.6kW에서는 0.215~0.227, 1.0kW에서는 0.305~0.315이었다. 각 최적조건에서 제막된 AZO 막의 비저항은 $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}cm$cm으로 타겟에 의한 차이는 없었다.

• 한국결정성장학회지
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• 제21권5호
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• pp.205-209
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• 2011

ZnO는 반도전성과 초전도성을 나타내며 광학적으로도 독특한 재료로 가스센서, 태양전지, 광학도파관 등 여러 방면에 널리 활용되고 있다. 본 논문에서는 이러한 ZnO에 Al을 첨가함에 따라 광학적 특성에 어떠한 영향을 미치는지 알아보기 위하여 ZnO에 Al 첨가량 변화에 따른 나노구조체를 제작하여 특성을 비교하였다. ZnO 용액은 PVP, ethanol, zinc acetate를 이용하여 Sol의 형태로 제작하였으며, Al첨가용액을 넣어 Al이 첨가된 ZnO Sol을 제작하였다. 제작된 Sol을 전기 방사법을 이용하여 나노구조체를 제조하였다. 제조된 섬유들을 각각 300, 500, $700^{\circ}C$로 열처리 한 후 나노 구조체를 XRD, XPS, SEM을 이용하여 분석하였다. 또한 TGA, DSC를 이용하여 온도변화에 따른 질량 및 열량의 변화를 측정하였다. UVvis를 이용하여 ZnO와 Al이 첨가된 ZnO의 흡광도를 측정 비교하였다.

• 한국결정성장학회지
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• 제6권4호
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• pp.480-492
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• 1996

Al이 2 wt% 포함되어 있는 Zn 금속 target을 사용하여 반응성 직류 magnetron sputtering법으로 AZO(Aluminum doped Zinc Oxide) 투명전도막을 제막하였다. 반응성 가스인 산소의 분압과 유량을 조절하여 투과율과 전도도가 모두 우수한 전이영역을 발견하였고 전이영역을 안정적으로 유지하기 위한 증착조건을 찾아냈다. ZnO:Al막의 XRD분석결과 산화막이나 전이영역에서 증착된 막들은 ZnO결정의 (002)면의 peak가 유일하게 관찰되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.699-700
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• 2013

Aluminum and hydrogen doped zinc oxide (AZHO) films were prepared by r.f. magnetron sputtering. The structural, electrical, and optical properties of the AHZO films were investigated in terms of the annealing conditions to study the thermal stability. The XRD measurements revealed that the degree of c-axis orientation was decreased and the crystallintiy of the films was deteriorated by the heat treatment. The electrical resistivity was significantly increased when the films were annealed at higher temperature. Although the optical transmittance of AHZO films didn't highly changed by heat treatment, the optical band gap was reduced, regardless of annealing temperature and duration. The thermal stability of AHZO films was worse compared to AZO films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.1149-1150
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• 2015

In this study, hafnium was doped into aluminum zinc oxide (AZO) films were deposited on glass and Si substrates at room temperature via co-sputtering by varying the electric power applied to the Hf target. The properties of deposited Hf-doped AZO films, such as crystalline structure, optical transmittance, and band gap were analyzed using various methods such as X-ray diffraction (XRD) and UV/visible spectrophotometer. The experimental results confirmed that the abovementioned properties of Hf-AZO films strongly depended on the Hf sputtering power.