• 제목/요약/키워드: Aluminum thin film

검색결과 305건 처리시간 0.024초

고주파 유도가열 장치를 이용한 알루미늄 박판 점착 복합방수시트 조인트부의 시공성 (Constructability of a Waterproofing Sheet Joint Combining an Aluminum Thin-film and Viscosity Layer Using a High-frequency Inductive Heating Apparatus)

  • 장상묵;김윤호;최성민
    • 한국건축시공학회지
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    • 제14권2호
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    • pp.163-169
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    • 2014
  • Engineers in the construction field have been using bonded waterproofing sheets in an attempt to resolve the imbalance in the quality, the risk of fire, safety of workers, and environmental pollution, as well as to eliminate separate use of organic adhesives on the surface of concrete. Recently, self-laminated waterproofing sheets have been developed. The purpose of this research is to find an appropriate processing speed according to the changes in physical properties, and visual observation of the waterproofing sheets laminated by the aluminum thin-film and viscosity layer that can be attached through self-adhesiveness on the surface of concrete and waterproofing sheets. Therefore, this research is conducted using a physical performance test. Based on the result of the test, when the high-frequency inductive heating apparatus was used, an improved adhesion and bonding stability effect were confirmed after the anti-hydrostatic pressure and bond strength in the temperature condition, and the surface observation in the processing speed condition.

Pulsed-DC 스퍼터링에서 Reverse Pulse Time에 따른 AZO 박막의 특성 변화에 관한 연구 (A Study on the Dependency of Pulsed-DC Sputtered Aluminum-doped Zinc Oxide Thin Films on the Reverse Pulse Time)

  • 류형석;조진건;권상직;조의식
    • 반도체디스플레이기술학회지
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    • 제17권4호
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    • pp.32-36
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    • 2018
  • For various oxygen($O_2$) to argon(Ar) gas ratio, aluminum-doped zinc oxide(AZO) films were deposited for 3 min at different duty ratio by changing reverse pulse times. As the duty ratio increased, the thickness of the AZO film decreased and the sheet resistance increased. It can be concluded that When sputtering AZO Thin film, oxygen interfered with sputtering. When the reverse time was increased, the thickness of AZO was proportional to the real sputtering time and decreased. From the optical transmittance and sheet resistance, it was possible to obtain a higher figure of merits of AZO at a lower reverse pulse time. Even at the short reversed pulse time, it can be concluded that the accumulated charges on the AZO target are completely cleared. At a lower reverse pulse time, pulsed-DC sputtering of AZO is expected to be used instead of DC sputtering in the deposition of transparent conductive oxide(TCO) films without any degradation in thickness and structural/electrical characteristics.

Zinc Tin Oxide 투명 박막트랜지스터의 특성에 미치는 소스/드레인 전극의 영향 (Influence of Source/Drain Electrodes on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors)

  • 마대영;최무희
    • 한국전기전자재료학회논문지
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    • 제28권7호
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    • pp.433-438
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    • 2015
  • Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

Effect of Thermal Heat Treatment on the Characteristics of Vertical Type Organic Thin Film Transistor Using Alq3 as Active Layer and Its Application for OLET

  • Oh, Se-Young;Kim, Young-Do;Hwang, Sun-Kak
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.644-647
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    • 2007
  • We have fabricated vertical type organic thin film transistor using tris-8-hydroxyquinoline aluminum $(Alq_3)$. The effects of the growth control of $Alq_3$ thin layer on the grain structure and the flatness of film surface have been investigated. In addition, we have fabricated light emitting transistor and then investigated electroluminescent properties.

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TFT LCD 제조용 대면적 Magnetron Sputtering 장치 설계와 Al 성장막 특성 조사 (Design of a Large Magnetron Sputtering System for TFT LCD and Investigation of Sputtered AI Film Properties)

  • 유운종
    • 한국진공학회지
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    • 제2권4호
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    • pp.480-485
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    • 1993
  • Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

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Al 박막의 underlayer로서의 Ionized Physical Vapor Deposition (I-PVD) Ti 또는 I-PVD Ti/Metal-Organic Chemical Vapor Deposition TiN (Ti Prepared by ionized physical vapor deposition (I-PVD) and TiN prepared by metal-organic chemical vapor deposition(MOCVD) as underlayers of aluminum TiN)

  • 이원준;나사균
    • 한국진공학회지
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    • 제9권4호
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    • pp.394-399
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    • 2000
  • Underlayer의 종류 및 두께가 Al 박막의 texture 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로는 ionized physical vapor deposition(I-PVD)에 의해 제조된 Ti와 I-PVD Ti 위에 metalorganic chemical vapor deposition(MOCVD)에 의해 제조된 TiN을 적층한 구조가 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하고, $400^{\circ}C$, $N_2$분리기에서 열처리하면서 면저항의 변화를 조사하였다. I-PVD Ti만을 Al의 underlayer로 사용한 경우, Ti두께가 5 nm이어도 Al 박막이 우수한 <111> 배향성을 나타내었으나, Al-Ti반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. I-PVD 와 Al 사이에 MOCVD TiN을 적용함에 의해 Al <111> 배향성의 큰 저하없이 Al-Ti 반응에 의한 면저항의 증가를 억제할 수 있었으며, MOCVD TiN의 두께가 4 nm 이하일 때 특히 우수한 Al <111> 배향성을 나타내었다.

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비정질 실리콘 박막 트랜지스터 소자 특성 향상을 위한 저 저항 금속 박막 전극의 형성 및 전기적 저항 특성 평가 (Metallizations and Electrical Characterizations of Low Resistivity Electrodes(Al, Ta, Cr) in the Amorphous Silicon Thin Film Transistor)

  • 김형택
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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    • pp.96-99
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    • 1993
  • 대면적 액정 표시판 (Liquid Crystal Display:LCD) panel내(內)의 구동소자인 비정질 실리콘 (amorphous silicon) 박막 트랜지스터 (Thin Film Transistor:TFT)의 구동신호전달 소자특성 향상을 위한 본(本) 연구의 목적은 액정 panel TFT 제조공정 상(上)의 증착금속 전극박막들의 Test Elements Group(TEG) metal line pattern별(別) 전기적 저항특성 평가에 있다. 현(現) TFT 전극용(用)으로 개발이 진행 중(中)인 Aluminum(Al), Tantalum(Ta) 및 Chromium(Cr) 이 특성평가 대상 금속 박막으로 선정 되었으며, 이들 금속막의 증착 thickness 와 TEG metal line width가 저항특성 변수로 성립 되었다. 본(本) 실험을 통해 금속 박막의 TEG line width별(別) 체적(體積)저항 (bulk resistance), 면(面)저항(sheet resistance), 비(比)저항 (resistivity) 및 기판 상(上)의 metal pattern 위치 변화에 따른 전기적 저항 uniformity 특성변화 평가가 있었다. TEG metal line 측정 변위에 따른 저항율의 선형변화 특성도 연구 되었으며, metal line별(別) 전기적 연속, 불연속 배선 단락 특성(electrical continuity test) 관찰도 있었다.

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Adhesive Behaviors of the Aluminum Alloy-Based CrN and TiN Coating Films for Ocean Plant

  • Murakami, Ri-Ichi;Yahya, Syed Qamma Bin
    • International Journal of Ocean System Engineering
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    • 제2권2호
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    • pp.106-115
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    • 2012
  • In the present study, TiN and CrN films were coated by arc ion plating equipment onto aluminum alloy substrate, A2024. The film thickness was about 4.65 ${\mu}m$. TiN and CrN films were analyzed by X-ray diffraction and energy dispersive X-ray equipments. The Young's modulus and the micro-Vickers hardness of aluminum substrate were modified by the ceramic film coatings. The difference in Young's modulus between substrate and coating film would affect on the wear resistance. The critical load, Lc, was 75.8 N for TiN and 85.5 N for CrN. It indicated from the observation of optical micrographs for TiN and CrN films that lots of cracks widely propagated toward the both sides of scratch track in the early stage of MODE I. TiN film began to delaminate completely at MODE II stage. The substrate was finally glittered at MODE III stage. For CrN film, a few crack can be observed at MODE I stage. The delamination of film was not still occurred at MODE II and then was happened at MODE III. This agrees with critical load measurement which the adhesive strength was greater for CrN film than for TiN film. Consequently, it was difficult for CrN to delaminate because the adhesive strength was excellent against Al substrate. The wear process, which the film adheres and the ball transfers, could be enhanced because of the increase in loading. The wear weight of ball was less for CrN than for TiN. This means that the wear damage of ball was greater for TiN than for CrN film. It is also obvious that it was difficult to delaminate because the CrN coating film has high toughness. The coefficient of friction was less for CrN coating film than for TiN film.

표면처리된 흑연 보트를 이용한 알루미늄의 증발 특성 (Evaporation Characteristics of Aluminum by Using Surface-treated Graphite Boat)

  • 정재인;양지훈
    • 한국표면공학회지
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    • 제42권1호
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    • pp.1-7
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    • 2009
  • Resistive heating sources are widely used to prepare thin films by vapor deposition because they are cheap, and easy to install and handle in vacuum system. Graphite is one of materials used to make the resistive heating source, but until now only limited applications have been possible as it reacts easily with evaporating materials at high temperature. In this study, evaporation characteristics of aluminum have been investigated by using graphite boat thermally treated with BN powder. The employed graphite boat has been prepared by spray-coating BN power onto the cavity surface of the boat and thermal treatment with aluminum in vacuum at the temperature of more than $1400^{\circ}C$. The voltage-current characteristics as well as resistivity changes of the graphite boat have been investigated during aluminum evaporation according to the applied voltage and time. The evaporation aspect has been picturized during flash evaporation for 40 seconds based on the characterization results. The evaporation rate of the graphite boat has been compared with that of BN boat. The graphite boat showed some different characteristics compared with BN boat, in that the evaporation occurred at the last stage of flash evaporation. The film appearance according to the applied voltage has been compared, and also the reflectance of the resulting film has been investigated according to the film thickness. It has been found that the graphite boat thermally treated with BN powder can be used for aluminum evaporation without problem.

알루미늄 7075 합금의 PEO 처리 기술 및 첨가제 영향 분석 (Study of PEO Process for Al 7075 and Effect of additives)

  • 진연호;양재교
    • 한국표면공학회지
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    • 제53권2호
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    • pp.53-58
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    • 2020
  • In this study, we developed plasma electrolytic oxidation (PEO) process for aluminum 7075 alloy to improve the corrosion and mechanical properties. The electrolyte consists of potassium hydroxide and sodium silicate. Additionally, sodium stannate was added into the electrolyte to investigate its effect on PEO film formation. Titanium was used as the counter electrode. Plasma generation voltage reduced from 300V to 150 V by adding 4 g/L of sodium stannate. The thin oxide films were observed by SEM(Scanning Electron Microscopy)/EDS (Energy Dispersive Spectroscopy) for quantitative and qualitative analyses. XRD (X-ray diffraction) and XRF (X-ray Fluorescences) analyses were also carried out to identify oxide layer on aluminum 7075 surface. Vicker's hardness test was performed on the PEO-treated aluminum 7075 surface.