• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.678-681
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• 2011

We have investigated the effect of organic thin film on the driving voltage of OLED (organic light emitting diode) by inserting a 5 nm thick 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or triphenylphosphineoxide ($Ph_3PO$) between tris-(8-hydroxyquinoline)aluminum ($Alq_3$) electron transport layer and 4,4'-bis(2,2'-diphyenylvinyl)-1,1'-biphenyl (DPVBi) emission layer. The device with 5 nm thick $Ph_3PO$ layer exhibited higher maximum current efficiency and lower driving voltage than the device with BCP layer, resulting from better electron injection from $Alq_3$ to DPVBi in the device with $Ph_3PO$ layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.490-491
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• 2007

We have investigated dielectric dispersion and absorption in organic light-emitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric dispersion and absorption of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase e in the frequency range of 40Hz to $10^8Hz$. We obtained dielectric constant and loss tangent (tan $\delta$) of the device. From these analyses, we are able to interpret a dielectric dispersion and dielectric absorption contributed by an interfacial and orientational polarization.

• Journal of the Korean institute of surface engineering
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• v.20 no.2
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• pp.43-48
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• 1987

Chromium and Aluminum films were deposited by evaporation technique in $3{\times}10^{-6}$ mbar vacuum level at the incident angles ranging from $0^{\circ}\;to\;60^{\circ}$ with various evaporation rates. We measured the sheet resistances and light transmittances, and observed diffraction patterns by TEM of these films. Relations among diffraction patterns, sheet resistances and light transmittances were discussed. The sheet resistances and light transmittances were shown the lowest values at 25$^{\circ}C$ of incident angle for all kinds of evaporation rates.

• Journal of Integrative Natural Science
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• v.2 no.4
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• pp.289-292
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• 2009

Perchlorosilanes are useful precursors for the synthesis of hydrosilanes for the fabrication of electronic devices such as silicon thin-film transistors and silicon nanoparticles. For this solution process, requirements of precursors applicable to solution process are relatively low volatile and soluble in common organic solvents. In this work, the decaphenylcyclopentasilane has been obtained from the reaction of the lithium wire and dichlorodiphenylsilane. The reaction of decaphenylcyclopentasilane with lewis acid catalyst, HCl/$AlCl_3$, gives the perchlorocyclopentasilane. Decaphenylcyclopentasilane exhibits an unusual optical property. Its optical property was characterized by UV-vis and fluorescence spectroscopy. Absorption wavelength maxima for the decaphenylcyclopentasilane was 272 nm. Decaphenylcyclopentasilane displayed an emission band at 741 nm with excitation wavelength of 272 nm.

• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.525-529
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• 2018

The antireflective (AR) coated poly methyl methacrylate (PMMA) substrate was deposited by atomic layer deposition (ALD) on a self-assembled monolayer (SAM) to improve hydrophobicity and mechano-chemical properties of organic thin films. The water contact angles (WCA) were tested to characterize the surface wettability of SAM octadecyltrichlorosilane (OTS) films. Results showed that a contact angle of $105.9^{\circ}$ was obtained for the SAM films with an annealing process, and the highest WCA of $120^{\circ}$ was achieved for the films prepared by the SAM and ALD multi-process. The surface morphology of the SAM films with different assembly times and varying number of ALD cycles was obtained by atomic force microscopy (AFM). The maximum light transmittance for the SAM films on the PMMA substrate reached 99.9% at a wavelength of 450 nm. It was found that the SAM surfaces were not affected at all by the ALD process.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.108-112
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• 1995

Copper and aluminum selective deposition using (hfac)Cu(VTMS) and DMEAA precursors were performed in a warm-wall low pressure chemical vapour deposition reactor. The films of Cu and AI deposited on Corning 7059 glass and quartz with pattern of Cr seed metal. Selective deposition can be achieved at a pressure range of from 10-1 to 10 torr and substrate temperature range of 150-25$0^{\circ}C$. Selective deposition of Cu and AI by CVD is one of candidate for gate material formation fo larger area and high resolution plat panel displays.

• Journal of Electrochemical Science and Technology
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• v.13 no.2
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• pp.213-226
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• 2022

In the present study, the corrosion behavior of aluminum Al-7075 tempered (T-6 condition) alloy was evaluated by immersion testing and electrochemical testing in 1.75% and 3.5% NaCl environment at acidic, neutral and basic pH. The data obtained by both immersion tests and electrochemical corrosion tests (potentiodynamic polarization and electrochemical impedance spectroscopy tests) present that the corrosion rate of the alloy specimens is minimum for the pH=7 condition of the solution due to the formation of dense and well adherent thin protective oxide layer. Whereas the solutions with acidic and alkaline pH cause shift in the corrosion behavior of aluminum alloy to more active domains aggravated by the constant flux of acidic and alkaline ions (Cl^- and OH^-) in the media which anodically dissolve the Al matrix in comparison to precipitated intermetallic phases (cathodic in nature) formed due to T6 treatment. Consequently, the pitting behavior of the alloy, as observed by cyclic polarization tests, shifts to more active regions when pH of the solutions changes from neutral to alkaline environment due to localized dissolution of the matrix in alkaline environment that ingress by diffusion through the pores in the oxide film. Microscopic analysis also strengthens the results obtained by immersion corrosion testing and electrochemical corrosion testing as the study examines the corrosion behavior of this alloy under a systematic evaluation in marine environment.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.781-784
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• 2005

Twenty four types of thermopile for micro spectrometer infrared sensors were fabricated on low-stress $Si_3N_4$ membranes with $1.2{\mu}m-thickness$ using MEMS technology. Poly-Si thin film with thickness of 3500 ${\AA}$ as the first thermocouple material, was deposited by LPCVD method. And aluminum thin film with thickness of 6000 ${\AA}$ as the second thermocouple material, was deposited by sputtering method. Thermopile were designed and fabricated for optimum conditions by five parameters of thermocouple numbers (16 ${\sim}$ 48), thermocouple line widths (10 ${\mu}m$ ${\sim}$ 25 ${\mu}m$), thermocouple lengths (100 ${\mu}m$ ${\sim}$ 500 ${\mu}m$), membrane areas ($1^2\;mm^2$ ${\sim}$ $2.5^2\;mm^2$) and junction areas (150 ${\mu}m^2$ ${\sim}$ 750 ${\mu}m^2$), respectively. Electromotive forces of fabricated thermopile were measured 1.1 mV ${\sim}$ 7.4 mV at $400^{\circ}C$. It was thought that measurement results could be used for thermopile infrared sensors optimum structure for micro spectrometers.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.187-192
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• 2000

We prepared $SiO_2-Na_2O-R_mO_n$ thin films based on economics of water glass and investigated optical, mechanical properties of product thin films. Coating sol stabilized with 1 N HCl and 1 N $NH_4OH$, was fabricated by using water glass and calcium nitrate, and aluminum nitrate as starting materials. As-coated films on stainless steel, Si wafer and soda-lime-silica glass by spinning were finally annealed at 500, 750 and $900^{\circ}C$. Micro hardness and nitrogen content in film surface of annealed films were measured by Knoop hardness tester and EDX, respectively. Field Emission Scanning Electron Microscope (FE-SEM) and UV-VIS spectroscopy were adopted to analyze surface morphology and thickness and reflectance of our films.