• 한국재료학회지
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• 제15권8호
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• pp.548-553
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• 2005

Trivalent cerium$(Ce^{3+})$ activated YAG (yttrium aluminum garnet, $Y_3Al_5O_{12})$) thin films phosphor were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters, annealing atmosphere, and substrates on growing behaviors and luminescent properties were investigated. The sputtering parameters were $O_2/(Ar+O_2)$ gas ratio, rf power, and deposition time. XRD (X-ray diffractometery) spectra exhibited that as-deposited films were amorphous, while they were transformed to the crystalline phases by post-annealing. The crystallinity and the atomic ratio strongly depended on the sputtering gas ratio $O_2/(Ar+O_2)$. High quality YAG:Ce thin films could be obtained at the gas ratio of $50\%$ oxygen. After annealing process, PL (Photoluminescence) spectra excited at 450nm showed a yellow single band at 550nm. The films deposited at the sputtering gas ratio of 50% oxygen exhibited the highest PL intensity.

• 한국세라믹학회지
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• 제44권6호
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• pp.303-307
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• 2007

Transparent In-doped zinc oxide (IZO) thin films are deposited with variation of pulsed DC power at Ar atmosphere on coming 7059 glass substrate by pulsed DC magnetron sputtering. A c-axis oriented IZO thin films were grown in perpendicular to the substrate. The optical transmittance spectra showed high transmittance of over 80% in the UV-visible region and exhibited the absorption edge of about 350 nm. Also, the IZO films exhibited the resistivity of ${\sim}10^{-3}{\Omega}\;cm$ and the mobility of ${\sim}6cm/V\;s$. Organic Light-emitting diodes (OLEDs) with IZO/N,N'-diphenyl-N, N'-bis(3-methylphenl)-1, 1'-biphenyl-4,4'-diamine (TPD)/tris (8-hydroxyquinoline) aluminum ($Alq_3$)/LiF/Al configuration were fabricated. LiF layer inserted is used as an interfacial layer to increase the electron injection. Under a current density of $100\;mA/cm^2$, the OLEDs show an excellent efficiency (9.4 V turn-on voltage) and a good brightness ($12000\;cd/m^2$) of the emission light from the devices. These results indicate that IZO films hold promise for anode electrodes in the OLEDs application.

• 한국표면공학회지
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• 제51권2호
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• pp.116-125
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• 2018

Aluminum-doped zinc oxide (AZO) is a commonly used material for the front contact layer of chalcopyrite $CuInGaSe_2$ (CIGS) based thin film solar cells since it satisfies the requisite optical and electrical properties with low cost and abundant elemental availability. Low-resistivity and high-transmission front contacts have been developed for high-performance CIGS solar cells, and nearly meet the required performance. However, the durability of the cell especially for the corrosion resistance of AZO films has not been studied intensively. In this work, AZO films were prepared on Corning glass 7059 substrates by radio frequency magnetron sputtering depending on the hydrogen content. The electrical and optical properties and electrochemical corrosion resistance of the AZO films were evaluated as a function of the hydrogen content. With increasing hydrogen content to 6 wt%, the crystallinity, crystal size, and surface roughness of the films increased, and the resistivity decreased with increased carrier concentration, Hall mobility, oxygen vacancies, and $Zn(OH)_2$ binding on the AZO surface. At a hydrogen content of 6 wt%, the corrosion resistance was also relatively high with less columnar morphology, shallow pore channels, and lower grain boundary angles.

• 한국전기전자재료학회논문지
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• 제26권10호
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• pp.754-759
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• 2013

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.

• 한국정보통신학회논문지
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• 제14권1호
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• pp.191-196
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• 2010

본 연구에서는 타겟 제작에 드는 비용을 줄이고, 타겟 이용의 효율성을 높이기 위해 기존의 소결된 세라믹 타겟 대신 분말 타겟으로 사용하여 알루미늄 도핑된 산화아연(Aluminum doped zinc oxde; AZO)박막을 마그네트론 스퍼터법에 의해 제조하고, 스퍼터 압력에 따른 박막 물성을 조사하였다. 유리 기판에 증착된 AZO 박막은 타깃 종류 및 스퍼터 압력에 관계없이 기판에 수직한 c-축 방향으로 우선 성장방위를 갖는 hexagonal 구조로 성장되었다. 스퍼터 압력이 증가함에 따라 이 면 방향으로의 결정성장이 촉진되었다. AZO 박막의 전기적, 광학적 특성은 스퍼터 압력 증가에 따라 향상되었으며, 15 mTorr에서 $6.5{\times}10^{-1}\;{\Omega}-cm$의 최소의 비저항 값을 나타내었다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.108-112
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• 2012

Crystalline silicon solar cell remains the major player in the photovoltaic marketplace with 90 % of the market, despite the development of a variety of thin film technologies. Silicon's excellent efficiency, stability, material abundance and low toxicity have helped to maintain its position of dominance. However, the cost of silicon photovoltaic remains a major barrier to reducing the cost of silicon photovoltaics. Using the crystalline silicon wafer with thinner thickness is the promising way for cost and material reduction in the solar cell production. However, the thinner thickness of silicon wafer is, the worse bow phenomenon is induced. The bow phenomenon is observed when two or more layers of materials of different temperature expansion coefficiencies are in contact, in this case silicon and aluminum. In this paper, the solar cells were fabricated with different thicknesses of Al layer in order to reduce the bow phenomenon. With lower paste applications, we observed that the bow could be reduced by up to 40% of the largest value with 130 micron thickness of the wafer even though the conversion efficiency decrease of 0.5 % occurred. Since the bowed wafers lead to unacceptable yield losses during the module construction, the reduction of bow is indispensable on thin crystalline silicon solar cell. In this work, we have studied on the counterbalance between the bow and conversion efficiency and also suggest the formation of enough back surface field (BSF) with thinner Al paste application.

• 한국정보통신학회논문지
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• 제14권4호
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• pp.923-928
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• 2010

양극산화 알루미늄(anodic aluminum oxide, AAO) 나노템플레이트는 제작이 쉬우며, 저비용, 대면적 제작이 가능하다는 장점으로 인해 이를 나노 전자소자 제작에 응용하려는 많은 연구가 이루어지고 있다. 이러한 나노템플레이트를 이용하면 기공의 직경이나 밀도를 변화킴으로써 나노구조의 물질의 크기나 밀도를 제어할 수 있다. 따라서 본 논문에서는 나노 전자소자 제작에 응용할 수 있는 AAO 나노템플레이트를 2단계 양극산화법에 의해 제조하였다. 이를 위해 기존의 알루미늄 판 대신 실리콘 웨이퍼 상에 DC 마그네트론 스퍼터법으로 $2{\mu}m$ 두께의 알루미늄 박막을 증착하였고, 전해액으로 사용한 옥살산 용액의 온도 및 양극산화 전압에 따른 다공성 알루미나 막의 미세구조를 조사하였다. 전해액 온도가 $8^{\circ}C$에서 $20^{\circ}C$로 높아짐에 따라 다공성 알루미나 막의 성장속도는 86.2 nm/min에서 179.5 nm/min으로 증가하였다. 최적 조건에서 제작된 AAO 나노 템플레이트의 기공 직경 및 깊이는 각각 70 nm와 $1\;{\mu}m$이었다.

• Tribology and Lubricants
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• 제26권1호
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• pp.14-20
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• 2010

Tribological properties of nanoporous structured alumina film was investigated. Alumina film (AAO: anodic aluminum oxide) of $60{\mu}m$ thickness having nanopores of 45 nm diameter with 105 nm interpore-diatance was fabricated by mild anodization process. Reciprocating ball-on-flat sliding friction tests using 1 mm diameter steel ball as a counterpart were carried out with wide range of normal load from 1 mN to 1 N in an ambient environment. The morphology of worn surfaces were analyzed using scanning electron microscopy. The friction coefficient was strongly influenced by the applied normal load. Smooth layer patches were formed on the worn surface of both AAO and steel ball at relatively high load (100 mN and 1 N) due to tribochemical reaction and compaction of wear debris. These tribolayers contributed to the lower friction at high loads. Extremely thin layer patches, due to mild plastic deformation of surface layer, were sparsely distributed on the worn surface of AAO at low loads (1 mN and 10 mN) without the evidence of tribochemical reaction. Delaminated wear particles were generated at high loads by fatigue due to repeated loading and sliding.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.273-273
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• 2008

This paper describes the frequency response of two-port surface acoustic wave (SAW) resonator made of 002-polycrystalline aluminum nitride (AlN) thin film on 111-poly 3C-SiC buffer layer. In there, Polycrystalline AlN thin films were deposited on polycrystalline 3C-SiC buffer layer by pulsed reactive magnetron sputtering system, the polycrystalline 3C-SiC was grown on $SiO_2$/Si sample by CVD. The obtained results such as the temperature coefficient of frequency (TCF) of the device is about from 15.9 to 18.5 ppm/$^{\circ}C$, the change in resonance frequency is approximately linear (30-$150^{\circ}C$), which resonance frequency of AlN/3C-SiC structure has high temperature stability. The characteristics of AlN thin films grown on 3C-SiC buffer layer are also evaluated by using the XRD, and AFM images.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.131-133
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• 2012

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons (D0X), two-electron satellite (TES), free-to-neutral-acceptors (e,A0), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for D0X in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for D0X transitions.