• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.304.2-304.2
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• 2016

Hafnium oxide-aluminum oxide (HfO2-Al2O3) dielectric films have been fabricated by Pulsed Laser Deposition (PLD), and their properties are studied in comparison with HfO2 films. As a gate dielectric of the TFT, in spite of its high dielectric constant, HfO2 has a small energy band gap and microcrystalline structure with rough surface characteristics. When fabricated by the device, it has the drawback of generating a high leakage current. In this study, the HfAlO films was obtained by Pulsed Laser Deposition with HfO2-Al2O3 target(chemical composition of (HfO2)86wt%(Al2O3)14wt%). The characteristics of the thin Film have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The X-ray diffraction studies confirmed that the HfAlO has amorphous structure. The RMS value can be compared to the surface roughness via AFM analysis, it showed HfAlO thin Film has more lower properties than HfO2. The energy band gap (Eg) deduced by spectroscopic ellipsometer was increased. HfAlO films was expected to improved the interface quality between channel and gate insulator. Apply to an oxide thin Film Transistors, HfAlO may help improve the properties of device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• 한국결정성장학회지
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• 제7권2호
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• pp.216-223
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• 1997

출발물질로 aluminum iso-propoxide ($Al(OC_3H_7)_3$, AIP)를 사용하여 화학증착법으로 Si-wafer(100)위에 알루미나 박막을 증착하였다. 증착된 박막의 조성을 알아보기 위해 ESCA를 이용하였으며, SEM을 이용하여 박막의 형상 및 두께를 평가하였다. 그리고 굴절율 및 C-V 특성은 각각 ellipsometry와 HP4192A를 사용하였다. ESCA와 SEM의 분석결과에서 상압보다는 저압에서 막이 균일하고 조성이 잘 맞는 것을 알 수 있었으며 열처리를 통해 굴절율의 변화를 볼 수 있었다. 그리고 NMOS소자에서의 C-V특성을 개선하기 위해, $Al_2O_3$와 Si사이에 $SiO_2$층을 형성하는 것이 좋음을 알 수 있었다.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권6호
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• pp.216-219
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• 2003

A new class of carbosiloxane dendrimer (G4-48PyP) terminated with 4-pyridylpropano I was synthesized and its possible application to functional thin films was examined through metal complexation and Langmuir-Blodgett (LB) technique. The highly concentrated periphery pyridyl groups of G4-48PyP were exposed on aq. aluminum ions at the air-water interface. The monolayers showed stability up to ca. 50 mN/m of surface pressure. When the subphase became acidic or alkaline, the monolayers changed to condensed phase. The presence of aluminum ions also caused reduction of the molecular area. The macroscopic images of the monolayers were monitored by Brewster angle microscopy (BAM) and only the images of dendrimer aggregates could be observed after the monolayer collapse. The surface images of the monolayer LB film were scanned by atomic force microscopy (AFM). The convex structures of single and aggregate molecules were directly observed. The structures of Langmuir-Blodgett (LB) films were characterized by FT-IR, UV-Vis, and X-ray photoelectron spectroscopy (XPS). The UV-Vis spectrum of the aluminum ion-complexed LB film showed additional band around 670nm, which was not found in the spectra of dendrimer itself or aq. aluminum ions. XPS spectra also supported the incorporation of aluminum ions into the LB films.

• 대한금속재료학회지
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• 제50권1호
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• pp.78-85
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• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• Korean Chemical Engineering Research
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• 제47권6호
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• pp.715-719
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• 2009

본 연구에서는 DNA 정보를 상변화 물질의 전기저항 변화특성으로 검출할 수 있는 상변화 전극 기판을 개발하였다. 이를 위해 반도체 공정에서 사용하는 Al을 사용하여 전극 기판을 제작하였다. 하지만 주사전자현미경을 이용하여 Al 전극의 단면 상태를 확인해 본 결과 PETEOS(plasma enhanced tetraethyoxysilane) 내에서 보이드(void)가 발생하여 후속공정인 에치백과 세정공정 분위기에 과도하게 노출되어 심하게 손상되어 전극과 PETEOS 사이에 홀(hole)로 변형된다. 이 문제점을 해결하기 위하여 에치백 및 세정 공정을 진행하지 않으면서 $Ge_2Sb_2Te_5$(GST) 박막의 단차피복성(stepcoverage)을 좋게 할 수 있고, 열역학적으로 GST 박막과의 반응성을 고려했을 때 안정적이면서 비저항이 낮은 TiN 재료를 사용하여 상변화 전극 기판을 제작하였다. 주사전자현미경을 통하여 전극의 단면의 상태를 관찰하였으며 TiN 전극과 GST 박막이 정상적으로 연결되어 있는 것을 확인하였다. 또한 저항측정 장비를 사용하여 TiN 상변화 전극 기판 위에 증착된 GST의 비정질과 결정질의 저항을 측정하였고, GST의 비정질과 결정질저항의 차이는 약 1,000배 정도로 신호를 검출하는데 충분함을 확인하였다.

• 센서학회지
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• 제23권6호
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• pp.420-424
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• 2014

Aluminum-scandium nitride ($Al_{1-x}Sc_xN$) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 50% $N_2$/Ar. The effect of Sc-doping on the structure and piezoelectric properties of AlN films has been investigated using SEM, XRD, surface profiler and pressure-voltage measurements. The as-deposited AlN films showed polycrystalline phase, and the Sc-doped AlN film, the peak of AlN (002) plane and the crystallinity became very strong. With Sc-doping, the crystal size of AlN film was grown from ~20 nm to ~100 nm. The output signal voltage of AlN sensor showed a linear behavior between 15~65 mV, and output signal voltage of Sc-doped AlN sensor was increased over 7 times. The pressure-sensing sensitivity of AlN film was calculated about 10.6mV/MPa, and $Al_{0.88}Sc_{0.12}N$ film was calculated about 76 mV/MPa.

• 대한전자공학회논문지SD
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• 제45권5호
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• pp.19-25
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• 2008

본 연구에서는 유기반도체인 펜타센과 소스-드레인 금속전극사이에 $C_{60}$을 홀주입층으로 적용한 유기박막트랜지스터를 제작하여 $C_{60}$을 삽입하지 않은 소자와의 전기적특성을 비교하였다. $C_{60}/Au$ 이중전극을 사용한 소자의 경우 Au단일전극을 사용한 소자와 비교하였을 때 전하이동도는 0.298 $cm^2/V{\cdot}s$에서 0.452 $cm^2/V{\cdot}s$ 문턱전압의 경우 -13.3V에서 -10.8V로 향상되었으며, contact resistance를 추출하여 비교하였을 경우 감소함을 확인할 수 있었다. 이러한 성능의 향상은 $C_{60}$을 Au와 pentacene 사이에 삽입하였을 경우 Au-pentacene 간의 원하지 않는 화학적 반응을 막아줌으로써 홀 주입장벽를 감소시켜 홀 주입이 향상되었기 때문이다. 또한 Al을 전극으로 적용한 OTFT도 제작하였다. 기존에 Al은 OTFT에 단일전극으로 사용하였을 경우 둘간의 높은 홀 주입장벽으로 인해 채널이 거의 형성되지 않았으나, $C_{60}/Al$ 이중전극을 사용한 소자의 경우 전하이동도와 전류점멸비은 0.165 $cm^2/V{\cdot}s$, $1.4{\times}10^4$ 으로써 Al를 단일전극으로 사용하는 소자의 전기적 특성에 비해 크게 향상되어진 소자를 제작할 수 있었다. 이는 $C_{60}$과 Al이 접합시에 interface dipole의 형성으로 Al의 vacuum energy level이 변화로 인한 Al의 work function이 증가되어 pentacene과 Al간의 hole injection barrier가 감소되었기 때문이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.211-211
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• 2011

Nanostructures, with a diversity of shapes, built on substrates have been developed within many research areas. Lithography is one powerful, but complex, technique to make structures at the nanometer scale, such as platinum nanowires for studying CO catalytic reactions [1], or aluminum nanodisks for studying the plasmon effect [2]. In this work, we approach a facile method to construct nanostructures using noble metals on a titania thin film by using self-assembled structures as a pattern. Here, a large-scale silica monolayer is transferred to the titania thin film substrates using a Langmuir-Blodgett trough, followed by the deposition of a thin transition metal layer. Owing to the hexagonal close-packed structure of the silica monolayer, we would obtain a metal nanostructure that includes separated metallic triangles (islands) after removing the patterning silica beads. This nanostructure can be employed to investigate the role of metal-oxide interfaces in CO catalytic reactions by changing the patterning silica particles with different sizes or by replacing the oxide support. The morphology and chemical composition of the structure can be characterized by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. In addition, we modify these islands to a connected island structure by reducing the silica size of the patterning monolayer, which is utilized to generating hot electron flow based on the localized surface plasmon resonance effect of the metal nanostructures.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2011년도 제37회 추계학술대회논문집
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• pp.554-557
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• 2011

금속분말을 연료로 하는 연소기 개발에 있어 발생하는 문제점 중에 하나는 알루미나 slag 처리이다. 연소기 내부에 Water film을 형성시킴으로써 금속분말 연소기의 문제점을 해결할 수 있을 것으로 기대한다. 이를 위한 선행연구로 water film의 형성 조건에 대한 실험을 수행하였다. 실험 모델에 대하여 물 분사 속도가 증가할수록 원형 모델에 대한 water fim 각도가 작아져, 약 10 m/s이상에서 완전한 water film이 형성되는 것을 알 수 있었다.