• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.304.1-304.1
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• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• 센서학회지
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• 제9권5호
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• pp.389-395
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• 2000

본 논문에서는 보호용 실리콘 산화층과 Al 층을 이용한 $Al_2O_3$ 예비층의 형성을 제안하였다. 실리콘 기판 위의 보호용 산화막 위에 알루미늄을 증착하고 이를 $800^{\circ}C$에서 열처리함으로써 에피텍시 $Al_2O_3$ 예비층 형성시킬 수 있었다. 그리고 형성된 $Al_2O_3$ 예비층위에 ${\gamma}-Al_2O_3$ 층을 형성하였다. ${\gamma}-Al_2O_3$막 성장시 공정의 초기 상태에서 발생하는 $N_2O$ 가스에 의한 Si 기판의 식각을 $Al_2O_3$ 예비층을 이용함으로써 방지할 수 있었다. $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$의 표면의 형태를 개선하는데 많은 효과가 있었다.

• Bulletin of the Korean Chemical Society
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• 제24권11호
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• pp.1659-1663
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• 2003

$Al_2O_3$ thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAl: $(CH_3)_2AlOCH(CH_3)_2$], as a new Al precursor, and water by atomic layer deposition (ALD). The selflimiting ALD process by alternate surface reactions of DMAI and $H_2O$ was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-$H_2O$ cycles. Under optimal reaction conditions, a growth rate of ~1.06 ${\AA}$ per ALD cycle was achieved at the substrate temperature of $150\;^{\circ}C$. From a mass spectrometric study of the DMAI-$D_2O$ ALD process, it was determined that the overall binary reaction for the deposition of $Al_2O_3\;[2\;(CH_3)_2AlOCH(CH_3)_2\;+\;3\;H_2O\;{\rightarrow}\;Al_2O_3\;+\;4\;CH_4\;+\;2\;HOCH(CH_3)_2]$can be separated into the following two half-reactions: where the asterisks designate the surface species. Growth of stoichiometric $Al_2O_3$ thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an $Al_2O_3$ film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the $Al_2O_3$ film and the Si substrate. C-V measurements of an $Al_2O_3$ film showed capacitance values comparable to previously reported values.

• 대한화학회지
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• 제53권4호
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• pp.466-470
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• 2009

• 한국표면공학회지
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• 제55권3호
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• pp.143-155
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• 2022

Ceramic oxide layers successfully were formed on the surface of cast Al alloys with high Si contents using plasma electrolytic oxidation (PEO) process in electrolytes containing Na₂SiO₃, NaOH, and additives. The microstructure of the oxide layers was systematically analyzed using scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM), X-ray diffraction patterns (XRD), and energy X-ray dispersive spectroscopy (EDS). XRD analysis indicated that the PEO untreated high-silicon Al alloys (i.e., 17.1 and 11.7 wt.% Si) consist of Al, Si and Al₂Cu phases whereas Al₂Cu phase selectively disappeared after PEO treatment. PEO process yielded an amorphous oxide layer with few second phases including γ-Al₂O₃ and Fe-rich phases. The corrosion behaviors of high-silicon Al alloys treated by PEO process were investigated using electrochemical impedance spectroscopy (EIS) and other electrochemical techniques (i.e., open circuit potential and polarization curve). Electroanalytical studies indicated that high-silicon Al alloys treated by PEO process have greater corrosion resistance than high-silicon alloys untreated by PEO process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.411.1-411.1
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• 2016

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

• 한국진공학회지
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• 제22권1호
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• pp.26-30
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• 2013

고유전율 절연체의 한 종류인 산화알루미늄 박막을 전자빔 증착법으로 형성하는 과정에서 산소 이온 빔의 조사를 이용, 산소 이온 빔 보조 증착 효과를 기대하였다. 산소 이온 보조 증착법으로 형성된 산화 알루미늄 박막의 두께 측정 결과, 높은 에너지에서의 이온 빔에 의한 식각 효과를 확인할 수 있었으며, 산소 이온 보조 증착 결과보다 높은 커패시턴스 값도 관찰할 수 있었다.

• 한국세라믹학회지
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• 제32권2호
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• pp.227-233
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• 1995

By using homestyle microwave oven, Al-Al2O3 powder mixture could be oxidized and sintered into Al2O3 body. The differences in powder characteristics among the differently processed raw materials affect the oxidation and sintering behaviours, and these effects were more pronounced in case of microwave oven than of conventional furnace. Al-Al2O3 powder mixture was oxidized and sintered within 2hrs, which could save both processing time and energy.

• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.57-63
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• 1994

Aluminum oxide($Al_2{O_3}$) offers some unique advantages over the conventional silicon dioxide( $SiO_{2}$) gate insulator: greater resistance to ionic motion, better radiation hardness, possibility of obtaining low threshold voltage MOS FETs, and possibility of use as the gate insulator in nonvolatile memory devices. We have undertaken a study of the dielectric breakdown of $Al_2{O_3}$ on Si deposited by GAIVBE technique. In our experiments, we have varied the $Al_2{O_3}$ thickness from 300.angs. to 1400.angs. The resistivity of $Al_2{O_3}$ films varies from 108 ohm-cm for films less than 100.angs. to 10$_{13}$ ohm-cm for flims on the order of 1000.angs. The flat band shift is positive, indicating negative charging of oxide. The magnitude of the flat band shift is less for negative bias than for positive bias. The relative dielectric constant was 8.5-10.5 and the electric breakdown fields were 6-7 MV/cm(+bias) and 11-12 MV/cm (-bias).

• 한국표면공학회지
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• 제54권1호
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• pp.25-29
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• 2021

The fabrication of nanopore membrane by deposition of Al2O3 film using electron-beam evaporation, which is fast, cost-effective, and negligible dependency on substance material, is investigated for potential applications in water purification and sensors. The decreased nanopore diameter owing to increased wall thickness is observed when Al2O3 film is deposited on anodic aluminum oxide membrane at higher deposition rate, although the evaporation process is generally known to induce a directional film deposition leading to the negligible change of pore diameter and wall thickness. This behavior can be attributed to the collision of evaporated Al2O3 particles by the decreased mean free path at higher deposition rate condition, resulting in the accumulation of Al2O3 materials on both the surface and the edge of the wall. The reduction of nanopore diameter by Al2O3 film deposition can be applied to the nanopore membrane fabrication with sub-100 nm pore diameter.