• The Journal of Korean Academy of Prosthodontics
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• v.43 no.4
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• pp.562-572
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• 2005

Statement of problem : Titanium is widely used as an implant material lot artificial teeth. Also, studies on surface treatment to form a fine passive film on the surface of commercial titanium or its alloys and improving bioactivity with bone have been carried out. However, there is insufficient data about the biocompatibility of the implant materials in the body. Purpose: The purpose of this study was to examine whether the precipitation of apatite on titanium metal is affected by surface modification. Materials and methods: Specimens chemically washed for 2 minute in a 1:1:1.5 (in vol%) mixture of 48% HF 60% $HNO_3$ and distilled water. Specimens were then chemically treated with a solution containing 97% $H_2SO_4$ and 30% $H_2O_2$ at $40^{\circ}C$S for 1 hour, and subsequently heat-treated at $400^{\circ}C$ for 1 hour. All specimens were immersed in the HBSS with pH 7.4 at $36.5^{\circ}C$ for 15 days, and the surface were examined with TF-XRD, SEM, EDX and XPS. Also, commercial purity Ti specimens with and without surface treatment were implanted in the abdominal connective tissue of mice for 4 weeks. Conventional aluminium and stainless steel 316L were also implanted for comparison. Results and conclusions : The results obtained were summarized as follows. 1. An amorphous titania gel layer was formed on the titanium surface after the titanium specimen was treated with a $H_2SO_4$ and $H_2O_2$ solution. The average roughness was $2.175{\mu}m$ after chemical surface treatment. 2. The amorphous titania was subsequently transformed into anatase by heat treatment at $400^{\circ}C$ for 1 hour. 3. The average thickness of the fibrous capsule surrounding the specimens implanted in the connective tissue was $46.98{\mu}m$ in chemically-treated Ti, and 52.20, 168.65 and $100.95{\mu}m$ respectively in commercial pure Ti, aluminum and stainless steel 316L without any treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.337-337
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• 2014

투명 전도성 산화물(transparent conductive oxide: TCO) 박막은 높은 투과율과 낮은 비저항 덕분에 LCD (liquid crystal display), PDP (plasma display panel), OLED (organic light emitting display) 등 평판 디스플레이에 널리 사용되고 있다. 현재 양산되고 있는 ITO (indium tin oxide)는 90% 이상의 높은 투과율과 우수한 전도성으로 인해 TCO 박막 가운데서 디스플레이 산업에서 가장 널리 쓰이고 있다. 그런데, ITO의 인듐산화물에 의한 간질성 폐렴(interstitial pneumonia)의 유발 위험이 있다든가, 인듐의 매장량이 적어 원자재 가격이 비싼 단점도 가지고 있다. 이에 최근 ITO를 대체할 수 있는 TCO물질로 많은 연구가 이루어지고 있는데, 특히 AZO (aluminum-doped zinc oxide)는 그 중 대표적인 대체물질로서 독성이 없고 가격도 저렴하여 많은 관심이 증폭되고 있다. 현재 AZO는 sol-gel 방법이나 CVD (chemical vapor deposition) 또는 스퍼터링 방법 등으로 증착되고 있다. 본 연구에서는 두 개의 이종타겟(hetero target)을 장착한 대향 타겟 스퍼터링(facing target sputtering: FTS) 장치를 사용하여 AZO 박막을 제작한다. 기존의 여러 증착법과 달리, FTS 장치는 두 타겟 사이에 형성되는 플라즈마 내의 ${\gamma}$-전자를 구속하게 되며, 낮은 가스 압력에서 고밀도 플라즈마가 생성되어 빠른 증착 속도와 안정적인 방전을 유지한 상태에서 박막을 증착할 수가 있다. 또한 기판과 플라즈마가 이격되어 있어 높은 에너지를 갖는 입자들의 기판 충돌을 억제할 수 있는 장점들을 갖는다. 이종 타겟인 ZnO와 Al2O3를 사용하고 각 타겟에 인가되는 파워 변화를 통해 AZO 박막 내 Al2O3의 성분비를 조절하였다. ZnO 타겟의 증착 파워를 100 W로 고정할 경우, Al2O3 타겟의 증착 파워가 (50~90) W으로 실험을 하였으며, Al2O3 타겟의 증착 파워가 70 W일 때 AZO 박막의 Al2O3 성분비는 2.02 wt.%이며 박막의 비저항 값은 $5{\times}10^{-4}{\Omega}{\cdot}cm$로 최소값을 보였다. 이러한 비저항의 변화는 파워에 따른 AZO 박막의 캐리어 이동도(Hall mobility)와 캐리어의 농도(Carrier Concentration)의 변화와 밀접한 관계가 있음을 보여주며, 특히 AZO 박막의 캐리어 농도와 캐리어 이동도는 AZO 박막을 형성하고 있는 결정립의 크기에 의존하는 것이 X-선 회절 패턴과 SEM으로부터 확인되었다. 특히, 본 연구에서는 두 개의 이종 타겟(hetero target) Al2O3와 ZnO를 장착하고 각각의 파워를 변화시켜 도핑 량을 조절할 수는 대향 타겟 스퍼터링(FTS: facing-target sputtering) 방법을 이용하여 제작된 AZO 박막에 대해 전기적, 광학적 및 구조적 특성을 분석하고 ITO의 대체물로서의 가능성을 검토하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Restorative Dentistry and Endodontics
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• v.22 no.1
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• pp.35-60
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• 1997

Physical properties of composite resins such as strength, resistance to wear, discoloration, etc, depend on the degree of conversion of the resin components. The clinical behavior of restorative resins varies brand to brand. Part of this variation is associated with the filler and differences in the polymer matrix. The polymer matrix of resins may differ because the involved monomers are dissimilar and because of variation in the catalyst system. The purpose of this study was to evaluate the degree of conversion of the composite resins according to the depth of cure and light curing time. 7mm diameter cylindrical aluminum molds were filled with each of five different hybrid light curing composite resins(Z-100, Charisma, Herculite XRV, Prisma TPH, Veridonfil) on the thin resin films. The molds were 1mm, 2mm, 3mm, 4mm, and 5mm in depth to produce resin films of various heights. Each sample was given 20sec, 40sec, and 60sec illumination with a light source. The degree of conversion of carbon double bonds to single bonds in the resin films was examined by means of Fourier Transform Infrared Spectrometer. The results were obtained as follows; 1. There was difference in the degree of conversion among five light curing composite resins according to the depth of cure for 20sec, 40sec, and 60sec illumination with light source with statistical significance(P<0.05). 2. Five light curing composite resins show lower degree of conversion at surface of the resin than depth of 1mm. 3. The degree of conversion of five light curing composite resins was siginificantly reduced from the maximum for the resin film when the light passed through as little as 1mm of each composite. 4. The degree of conversion of five light curing composite resins decrease significantly at the depth of 4mm, and polymerization was not occured at the depth of 5mm except for Prisma TPH. 5. The degree of conversion of five light curing composite resins was increased with increased light curing time, and there was no significant differences in the degree of conversion above 4mm in Z-100, 3mm in Charisma, and at depth of 5mm in Herculite XRV and Veridonfil(P>0.05).

• Journal of Korea Port Economic Association
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• v.31 no.3
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• pp.141-153
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• 2015

This paper is an attempt to analyze the comparative advantage of Busan Port to China. For this, we use the market comparative advantage index, which is a version of the revealed comparative advantage index. The market comparative advantage index (MCA) uses trade patterns to identify the sectors in which a region has a comparative advantage, in this case by comparing Busan Port's trade profile with the world average (China). The indices are calculated at the commodity level of the HS four-digit classification. The export data used in this study are obtained from the Korea International Trade Association. Exports to China accounted for almost one third of Korean exports in 2014. There are, however, structural differences among the main export items of Busan Port. This paper, therefore, employs MCA indices to reveal the behaviors of the ten main export items, which are "HS3920-other plates/sheets/film/foil of plastics," "HS7606-aluminum plates/sheets/strip," "HS8479-unspecified machines/medical appliances," "HS8486-machines for semiconductor devices or wafers," "HS8529-parts for transmission apparatus for television," "HS8703-motor vehicles for the transport of persons," "HS8708-parts of motor vehicles," "HS9001-optical fibers," and "HS9013-liquid crystal devices." The study shows that export competitiveness of nine items increases, the exception being HS8703. However, China's import ratios of seven of the nine items for which the MCA indices go up are on the decrease, which means that it would be hard to expand the export market for these seven items, despite the higher MCA indices. Since the shares of the port's total exports to China of HS3907, HS8486, HS8529, HS9001, and HS9013 in total exports to China increase together with China's import ratio decreasing, these items may have promising export markets. MCA increases of HS7606 and HS8479 are attributable to China's lower import ratio, rather than a higher export share, so higher MCA indices do not guarantee higher export competitiveness for these items.

• Land and Housing Review
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• v.10 no.3
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• pp.23-32
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• 2019

Vacuum Insulation Panel(VIP) has the lowest thermal conductivity among present insulations. It is composed of envelope, core material and getter. Aluminum film is usually used as the envelope of VIP, and it is important component to decide the useful life of VIP. In this research, the thermophysical properties of incombustible fiber glass core VIP were investigated with the possibility of its architectural applications. The results of this research can be summarized as follows: 1) The thermal conductivity of 20mm-thick fiber glass core VIP is resulted as 0.00177W/m·K, which means that 20mm-thick VIP can meet all the reinforced insulation guideline and it can be used in any envelope of any region in Korea. 2) As a result of the test of incombustion and gas toxicity, fiber glass core VIP was suitable for incombustible material. 3) As the test result for the long term thermal conductivity, fiber glass core VIP was found out that it would keep above 10 times insulating performance than polystyrene foam and glass fiber. 4) To meet the thermal transmittance of 0.12W/㎡K, limited-combustible insulation of expanded polystyrene foam and phenolic foam should be used respectively as thick as above 280mm and 170mm, incombustible VIP can meet the same insulation level with 20mm thickness. 5) The price competitiveness of incombustible VIP to meet the thermal transmittance of 0.12W/㎡·K was about 1,500won/㎡ higher than that of phenolic foam.

• Journal of Surface Science and Engineering
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• v.49 no.6
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• pp.580-586
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• 2016

Cr-Si-Al-N coating with different Si content were deposited by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The deposition temperature was $300^{\circ}C$, and the gas ratio of $Ar/N_2$ were 9:1. The CrSi alloy and aluminum targets used for arc ion plating and sputtering process, respectively. Si content of the CrSi alloy targets were varied with 1 at%, 5 at%, and 10 at%. The phase analysis, composition and microstructural analysis performed using x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) including energy dispersive spectroscopy (EDS), respectively. All of the coatings grown with textured CrN phase (200) plane. The thickness of the Cr-Si-Al-N films were measured about $2{\mu}m$. The friction coefficient and removal rate of films were measured by a ball-on-disk test under 20N load. The friction coefficient of all samples were 0.6 ~ 0.8. Among all of the samples, the removal rate of CrSiAlN (10 at% Si) film shows the lowest values, $4.827{\times}10^{-12}mm^3/Nm$. As increasing of Si contents of the CrSiAlN coatings, the hardness and elastic modulus of CrSiAlN coatings were increased. The morphology and composition of wear track of the films was examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy, respectively. The surface energy of the films were obtained by measuring of contact angle of water drop. Among all of the samples, the CrSiAlN (10 at% Si) films shows the highest value of the surface energy, 41 N/m.

• Composites Research
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• v.13 no.4
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• pp.42-53
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• 2000

A study has been made to establish an optimum condition in the surface treatment and curing method that is important for the fabrication of Al 7075/CFRP laminates. PAA(Phosphoric Acid Anodizing) provided a good adhesive strength and FPL(Sulfuric / Sodium Dichromate Acid Etching) had a similar adhesive strength with PAA. On the other hand, the poor adhesive strength was shown on vapor degrease and CAA(Chromic Acid Anodizing). By using the atomic force microscope(AFM), it was found that the PAA oxide surface obviously had a greater degree of microroughness as compared to vapor degrease, CAA and FPL treated surfaces. These results support the concept of a mechanical interlocking of the adhesive with-in the oxide pores as the predominant adhesion mechanism. In curing methods, the adhesive strength of co-curing method was higher than that of secondary curing method. With respect to stability of specimen shape, the secondary curing method was better than co-curing method. DMA(Dynamic Mechanical Analysis) test revealed $T_g$ in curing times over 60 min is nearly same, so it is estimated they will have similar degree of curing and joint durability in using FM300M adhesive film.

• Resources Recycling
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• v.29 no.4
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• pp.15-30
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• 2020

Recently, it is increasing a amount of installed solar-cell rapidly, and end-of-life photovoltaic(ELP) modules are generated in according to the reduction of cell efficiency largely. Recycling of ELP modules are begun at an advanced nation already, but there are bring about environmental contamination and resource recovery problems owing to not treated ELP modules because of economic cost completely. First of all, there were researched basic study for treatment conditions of used solar cell inspection, dismantling of aluminum frame, crushing / grinding & separation of tempered glass, removal of back sheet & EVA film, leaching & precipitation recovery of valuable metals and treatment of waste water. Therefore, we establish optimum conditions through carried out of designed apparatus, installation of equipment, test operation & trouble shooting in scale of 1ton/day pilot plant test. Following to economic review, it does have the economic efficiency until to the case of tempered glass recovery, but does not have the economic value in case of total processes until to recover the valuable metals. However, there are guaranteed economic value if we are gained a large amount of the expenses through EPR supported system. It was confirmed the commercialized possibility of ELP modules recycling if there were established on the collecting ELP modules, reusing criteria, economical technology, enactment of directives and enforcement of EPR supported system efficiently.