• Korean Journal of Materials Research
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• v.31 no.3
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• pp.122-131
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• 2021

In the fabrication of joined materials between anodized aluminum alloy and polymer, the performance of the metal-polymer joining is greatly influenced by the chemical properties of the oxide film. In a previous study, the dependence of physical joining strength on the thickness, structure, pore formation, and surface roughness of films formed on aluminum alloys is investigated. In this study, we investigated the effect of silane coupling treatment on the joining strength and sealing performance between aluminum alloy and polymer. After a two-step anodization process with additional treatment by silane, the oxide film with chemically modified nanostructure is strongly bonded to the polymer through physical and chemical reactions. More specifically, after the two-step anodization with silane treatment, the oxide film has a three-dimensional (3D) nanostructure and the silane components are present in combination with hydroxyl groups up to a depth of 150 nm. Accordingly, the joining strength between the polymer and aluminum alloy increases from 29 to 35 MPa, and the helium leak performance increases from 10-2-10-4 to 10-8-10-9 Pa ㎥ s-1.

• Transactions of the Society of Information Storage Systems
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• v.9 no.2
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• pp.67-71
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• 2013

The fabrication method of plasmonic nanodots on silicon substrate has been developed to improve the efficiency of thin film solar cells. Nanoscale metallic nanodots arrays are fabricated by anodic aluminum oxide (AAO) template mask which can have different structural parameters by varying anodization conditions. In this paper, the structural parameters of gold nanodots, which can be controlled by the diverse structures of AAO template mask, are investigated to enhance the optical properties of a-Si thin film solar cells. It is found that optical properties of the thin film solar cells are improved by finding optimization values of the structural parameters of the gold nanodot array.

• Journal of the Korean Chemical Society
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• v.60 no.3
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• pp.169-176
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• 2016

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on aluminum were investigated, using the potentiodynamic method, chronoamperometry, and multi-frequency electrochemical impedance spectroscopy. The corrosion of aluminum was heavily influenced by the degree of oxygen concentration because of the increasing reduction current. The oxide film formed during the passivation process of aluminum has showed the electronic properties of n-type semiconductor, which follow from the Mott-Schottky equation. It was found out that the passive film (Al(OH)₃) of Al formed in the low electrode potential changes to Al₂O₃ while the electrode potential increases. The growth kinetics data as measured by chronoamperometry suggests a mechanism in which the growth of the film of Al₂O₃ is determined by field-assisted transport of ions through the film.

• Corrosion Science and Technology
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• v.10 no.1
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• pp.37-42
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• 2011

Aluminum was electrochemically etched in acid solution and the surface area was magnified by the formation of etch pits. Etched aluminum was covered with a compact and dense dielectric oxide film by anodization and applied to the aluminum electrolytic capacitor electrode. Capacitance of aluminum electrolytic capacitor is closely related with surface area, which depends on size and number of etch pits. Size of etch pits need to be controlled because inside of the pits can be buried by the formation of dielectric oxide film. In this work, the effect of ultrasound pretreatment on the aluminum etch pit formation and capacitance were investigated. Additionally, the relationship between the second etching effect on pit size and capacitance was studied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.286-290
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• 2020

The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.

• Applied Chemistry for Engineering
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• v.17 no.4
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• pp.335-342
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• 2006

Metal aluminum, of which has a low standard reduction potential, participates in the electrochemical oxidation reaction and results in the structural change and accompanying property variation of aluminum and its oxide film. Aluminum was electrochemically etched in acid solution and the surface area was magnified by the formation of high density etch pits. Etched aluminum was covered with a compact and dense dielectric oxide film by anodization and applied to the capacitor electrode. Anodization of aluminum in acid solution at low temperature makes a nanoporous aluminum oxide layer which can be used for the fabrication template of nanostructural materials. Electrochemical characteristics of aluminum turn the metal aluminum into functional materials and it will bring the diverse applications of metal aluminum.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.81-86
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• 1995

Aluminum has been deposited selectively on TiN surfaces in the presence of Si, SiO2 from Dimethyethylamine Alane(DMEAA). The film properties of the deopsited AI film were determined by various methods(SEM, Auger, UV-photospectrometer, Four point-probe, XRD). The effect of in-situ H2 plasma precleaning was studied. The effect of gap distance, pressure and temperature on the properties(crystallinity, resistance, grain size, morphology) of AI film and on the growth rates was investigated. It was found that the plasma precleaning promotes the growth rate and there exists optimum thmperature for maximum growth rate.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.05a
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• pp.187-192
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• 2008

A simplified model for an isolated aluminum particle burning in air is presented. Burning process consists of two stages, ignition and quasi-steady combustion (QSC). In ignition stage, aluminum which is inside of oxide film melts owing to the self heating called heterogeneous surface reaction (HSR) as well as the convective and radiative heat transfer from ambient air until the particle temperature reaches melting point of oxide film. In combustion stage, gas phase reaction occurs, and quasi-steady diffusion flame is assumed. For simplicity, 1-dimesional spherical symmetric condition and flame sheet assumption are also used. Extended conserved scalar formulations and modified Shvab-Zeldovich functions are used that account for the deposition of metal oxide on the surface of the molten aluminum. Using developed model, time variation of particle temperature, masses of molten aluminum and deposited oxide are predicted. Burning rate, flame radius and temperature are also calculated, and compared with some experimental data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.68-72
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• 2021

Aluminum is a lightweight metal and has excellent properties with regard to conductivity, workability, and strength. It has been used in various industries owing to its economic benefits. To improve upon the mechanical properties and processability by adding various alloying elements to aluminum, improving the corrosion resistance and heat resistance by electrochemically forming a porous anodic film having a thickness and hardness on the surface of the aluminum alloy is crucial. In this study, the aluminum 6061 alloy was controlled by an anodization process in a 0.3M oxalic acid electrolyte at room temperature to investigate the oxide film parameters such as porosity and thickness depending on the modulating applied voltage and time. The anodizing experiment was performed by increasing the time from 1 h to 9 h at 2-h intervals at applied voltages of 50 V and 60 V.

• Laser Solutions
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• v.15 no.4
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• pp.1-5
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• 2012

We demonstrate that reduced graphene oxide (rGO) coated thin aluminum film is an effective optoacoustic transmitter for generating high pressure and high frequency ultrasound previously unattainable by other techniques. The rGO layer of different thickness is deposited between a 100 nm-thick aluminum film and a glass substrate. Under a pulsed laser excitation, the transmitter generates enhanced optoacoustic pressure of 64 times the aluminum-alone transmitter. A promising optoacoustic wave generation is possible by optimizing thermoelasticity of metal film and thermal conductivity of rGO in the proposed transmitter for laser-induced ultrasound (LIUS) applications.