• Journal of Information Display
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• v.4 no.2
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• pp.13-18
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• 2003

We synthesized bis (2-methyl-8-quinolinolato)(triphenylsiloxy) aluminum (III) (SAlq), a blue-emitting material having a high luminous efficiency, through a homogeneous-phase reaction. The photoluminescence (PL) and electroluminescence (EL) spectra of SAlq show two peaks at 454 nm and 477 nm. Efficient white light-emitting devices are fabricated by doping SAlq with a red fluorescent dye of 4-dicyanomethylene-2-methyl-6-{2-(2,3,6,7-tetrahydro-1H,5H-benzo[i,j]quinolizin-8yl) vinyl}-4H-pyran (DCM2). The incomplete energy transfer from blue-emitting SAlq to red-emitting DCM2 results in light-emission of both blue and orange colors. Devices with the structure of ITO/TPD (50 nm)/SAlq:DCM2 (30 nm, 0.5 %)/$Alq_3$ (20 nm)/LiF (0.5 nmj/Al show EL peaks at 456 nm and 482 nm originating from SAlq and at 570 nm from DCM2, resulting in the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.37). The device exhibits an external quantum efficiency of about 2.3 % and a luminous efficiency of about 2.41m/W at 100 $cd/m^2$. A maximum luminance of about 23,800 $cd/m^2$ is obtained at the bias voltage of 15 V.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.549-553
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• 2014

$CoSb_3$-based skutterudite compounds are candidate materials for thermoelectric power generation in the mid-temperature range (600 - 900 K) because their thermoelectric properties can be enhanced by doping and filling. The joining property of thermoelectric module electrodes containing thermoelectric materials is of great importance because it can dominate the efficiency of the thermoelectric module. This study examined the properties of $CoSb_3$/Al/Ti/CuMo joined by the spark plasma sintering technique. Titanium thin foil was used to prevent the diffusion of copper into $CoSb_3$ and Aluminum thin foil was used to improve the adhesion between $CoSb_3$ and Ti. The insertion of an Aluminum interlayer between the Ti and $CoSb_3$ was effective for joining $CoSb_3$ to Ti by forming an intermediate layer at the Al-$CoSb_3$ boundary without any micro cracks. Specifically, the adhesion strength of the Ti/Al/$CoSb_3$ joining interface showed a remarkable improvement compared with our previous results, without deterioration of electrical property in the interface.

• Korean Journal of Metals and Materials
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• v.50 no.11
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• pp.847-854
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• 2012

Al-doped ZnO (AZO) thin films were grown on quartz substrates by the sol-gel method. The effects of the Al mole fraction on the structural and optical properties of the AZO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-VIS spectroscopy. The particle size of the AZO thin films decreased with an increase in Al concentrations. The optical parameters, the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity, were studied in order to investigate the effects of Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at an infinite wavelength of the AZO thin films were affected by the Al incorporation. The optical conductivity of the AZO thin films also increased with increasing photon energy.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.64-69
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• 2006

Cathode materials of Al-doped $Li(Ni_{1/3}Co_{1/3}Mn_{1/3-x}Al_x)O_2$ (x=0.0, 0.005, 0.01 0.05) for lithium ion batteries were synthesized with ultra-sonic spray pyrolysis method and single-step heat treatment. No secondary phases were found in all synthesized powders. The intensity ratio of $I_{003}\;to\;I_{104}$, however, slightly decreased and the particle size increased with the Al contents. The cells with bare, 0.5 and 1.0 at% Al-doped powders showed the initial discharge capacities of 182, 180 and $184mAhg^{-1}$ in a voltage range of $3.0\sim4.5V$ at 1C rate, and the capacity retentions of 81, 77 and 78% at the end of 30 cycles, respectively. But in the voltage range of $3.0\sim4.6V$, the Al-doping significantly enhanced the cycle stability. For example, the discharge capacity after 50 cycles was maintained to 70% in the 0.5 at% Al-doped sample compared to only 30% in no doped sample. The improvement of the cycle stability was thought to be due to $Mn^{3+}$ ion decrease as the Al doping from the XPS analysis results.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1583-1586
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• 2006

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.618-622
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• 2010

Cost-effective purification methods of silicon were carried out in order to replace the conventional Siemens method for solar grade silicon. Firstly, acid leaching which is a hydrometallurgical process was preceded with grinded silicon powders of metallurgical grade (~99% purity) to remove metallic impurities. Then, plasma treatments were performed with the leached silicon powders of 99.94% purity by argon plasma at 30 kW power under atmospheric pressure. Plasma treatment was specifically efficient for removing Zr, Y, and P but not for Al and B. Another purification step by EB treatment was also studied for the 99.92% silicon lump which resulted in the fast removal of boron and aluminum. That means the two methods are effective alternative tools for removing the doping elements like boron and phosphor.

• Journal of Electrochemical Science and Technology
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• v.10 no.2
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• pp.148-158
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• 2019

The corrosion protection of AA2024 PPy coated samples doping with nanosized metal oxides, including $TiO_2$ and $CeO_2$ nanoparticles and $Nd_2O_3$ nanorods, during exposure to the solutions of 0.1 M $H_2SO_4$ and 3.5% NaCl was evaluated by electrochemical impedance spectroscopy (EIS) and linear polarization resistance (LPR) techniques. The nanorods of $Nd_2O_3$ were synthesized by cathodic pulse electrochemical deposition technique. The barrier properties of the different PPy coatings containing nanosized metal oxides immersed in $H_2SO_4$ solution were ranked as follows: $Nd_2O_3$ > $TiO_2$ > $CeO_2$. Therefore, the $Nd_2O_3$ coating sample provided the highest corrosion protection at any time of immersion up to 72 hours after immersing in $H_2SO_4$ solution. On the other hand, the $CeO_2$ coating sample displayed the best anticorrosive properties among the other coating samples after immersion in NaCl solution up to 28 days. This is due to the inhibition effect of cerium ions on aluminum alloys at near-neutral solutions.

• Applied Chemistry for Engineering
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• v.16 no.4
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• pp.491-495
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• 2005

Vanadium pentoxide xerogels with a doping ratio of $Al/V_2O_5$ ranging from 0.01 to 0.05 were synthesized by doping Al into $V_2O_5$ xerogel via the sol-gel process. By using the synthesized $Al_xV_2O_5$, the $Li/Al_xV_2O_5$ cells were assembled to investigate the chemical and electrochemical properties. Surface morphology of the $Al_xV_2O_5$ xerogel showed an anisotropic corrugated sheet-like matrix, and the interlayer distance was about $11.5{\AA}$. The IR spectra of the $Al_xV_2O_5$ revealed that the doped Al was coordinated to the vanadyl group in $V_2O_5$. The $Al_xV_2O_5$ xerogels showed enhanced reversibility and energy density compared with the $V_2O_5$ xerogel. The specific capacity of the $Al_{0.05}V_2O_5$ xerogel was more than 200 mAh/g at 10 mA/g discharge rate, and cycle efficiency was about 90% after the 31st cycling test between 1.9 V and 3.9 V.

• Journal of the Korean Chemical Society
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• v.44 no.4
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• pp.350-355
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• 2000

The compounds, CaAl$_2$(BO$_3$)$_2$O, SrAl$_2$(BO$_3$)$_2$O and BaAl$_2$(BO$_3$)$_2$O, are good host lattices for highly efficient $Eu^{2+}$ luminescence. The europium emission peaks at 450 nm in $Eu^{2+}$:CaAl$_2$(B0$_3$)$_2$O, 411 nm in $Eu^{2+}$: SrAl$_2$(BO$_3$)$_2$O and 375 nm in $Eu^{2+}$: BaAl$_2$(BO$_3$)$_2$O. The $Eu^{2+}$: CaAl$_2$(BO$_3$)$_2$O Phosphor shows a high output and should be a good maintenance in VUV Xe lamps. It is ideally suited for use in PDP phosphors. The $Eu^{2+}$ ion is interesting because the Stokes shift emission is a strong host dependent. The difference in the Stokes shift is oneimportant factor leadingto a difference in wavelength. If the 5d level of $Eu^{2+}$ ion is lower in energy,according to a decrease in the doping lattice size, then the emission wavelength will be longer and the Stokes shift will be smaller. Therefore, a knowledge of the relationship between the crystal lattice size and the Stokes shift. (orthe energy of the 5d level),is essential for beingable to predict $Eu^{2+}$ emission properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.27-27
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• 2009

Non-stochiometric CdS:H films grown on polyethersulfon (PES) flexible polymer substrates at room temperature by R.F. sputtering technique. They exhibited a dark- and photo-sheet resistance of $2.7\times10^5$ and $\sim\;50\;{\Omega}$/square, respectively. These values were realized by an optimum control of both hydrogen doping-levels and the surface morphologies of the films. The comparison between the real and the simulated results for the shielding and the transmission by the free space measurement system in the X-band frequency range (8.2 - 12.4 GHz) was also addressed in this study. Samples overlapped with 13 layers of CdS:H/PES were consistent with the transmission results of pure aluminum metal films ($0.1\;{\Omega}$/square) deposited on PES substrates. As a result, by the simples tacking of the CdS:H/PES layers, the perfect control of the shielding and the transmission of the EM wave in the range of X-band frequency is possible by avisible light alone, and their results are especially very outstanding findings in the stealth function of the radome(Radar+Dome) such as aircrafts, ships, and missiles.