• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1079-1083
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• 1998

In this study, ultrasonic power of Aluminum wire bonder, bond time and bond force are investigated and valued in order to minimize failure of bonding pad lift. We also tried to control those 3 factors properly. We got the conclusion that if we turn down the ability of ultrasonic power or bond time, we can get a pad lift from a boundary between bond pad ad wire because pad metal and wire joining is unstable, but it is best condition when it ultrasonic power is 100∼130unit, bond time is 15∼20msec and bond force is 4∼6gf.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.4-4
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• 2009

Surface analysis on defective wire-bonding pads are performed in flash memory assembly. Week wire bonding may cause a significant effect on the final product reliability, and the surface condition of the aluminum bond pads is critical in terms of product reliability. To find out possible week bonding on semiconductor interconnects, ball sheer test (BST) has been performed. On some defective or week bonded pads, we have investigated the surface contents, assuming that the week bonding is induced from the surface conditions. AES and XPS are employed for the quantitative surface analysis on defective dies.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.69-74
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• 2010

A new package substrate for dynamic random access memory(DRAM) devices has been developed using selective aluminum anodization. Unlike the conventional substrate structure commonly made by laminating epoxy-based core and copper clad, this substrate consists of bottom aluminum, middle anodic aluminum oxide and top copper. Anodization process on the aluminum substrate provides thick aluminum oxide used as a dielectric layer in the package substrate. Placing copper traces on the anodic aluminum oxide layer, the resulting two-layer metal structure is completed in the package substrate. Selective anodization process makes it possible to construct a fully filled via structure. Also, putting vias directly in the bonding pads and the ball pads in the substrate design, via in pad structure is applied in this work. These arrangement of via in pad and two-layer metal structure make routing easier and thus provide more design flexibility. In a substrate design, all signal lines are routed based on the transmission line scheme of finite-width coplanar waveguide or microstrip with a characteristic impedance of about $50{\Omega}$ for better signal transmission. The property and performance of anodic alumina based package substrate such as layer structure, design method, fabrication process and measurement characteristics are investigated in detail.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.221-225
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• 2014

Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.