• Bulletin of the Korean Chemical Society
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• v.13 no.6
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• pp.620-624
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• 1992

The analytical performance of glow discharge mass spectrometer (GD-MS), using a flat type ion source is discussed. The efficiency of ion extraction was maximized at the distance between anode and cathode of 6 mm. At the operation condition of 4 mA, -1000 volt, and 1 mbar for the source, the optimum voltages for sampler and skimmer were40 volt and -280 volt, respectively. The intensities of Cu, Zn, and Mn were increased as a function of square root of current approximately. Korea standard reference materials (KSRM) were tested for an application study. The detection limits of most elements were obtained in the range of several ppm at the optimized operating condition. The peaks of aluminum and chromium were interfered by those of residual gases. The depth profile of nickel coated copper specimens (3, 5, 10 ${\mu}m$ thickness) were obtained by plotting time versus intensities of Ni and Cr after checking the thickness of nickel coated using a scanning electron microscope (SEM). At this moment, the sputtering rate of 0.2 ${\mu}m/min$ at the optimum operating condition was determined from the slope of the plot of time to the coating thickness. The roughness spectra of specimen's crater after 16 min, discharge were obtained using a Talysuf5m-120 roughness tester as well.

• Korean Journal of Soil Science and Fertilizer
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• v.32 no.4
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• pp.421-428
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• 1999

Potassium (K) released from weathering of biotite in soils has been recognized as one of major K-sources for plant growth. Sand size biotite in a soil-saprolite-parent rock profile developed under temperate climate was studied in terms of morphological, mineralogical, and chemical changes according to depth employing petrographic and electron microscopes. X-ray diffraction, and electron microprobe. Biotite showed discoloring from black to goldish white and loss paleochroism with decreasing depth. Both edge and layer weatherings of biotite showed in this study. Hexagonal holes and cracks on (001) plane of weathered biotite grains were observed and their members increased with increasing weathering degree. Biotite was altered to kaolinite with or without intermidiate products such as hydrobiotite, degraded biotite, and illite. Average chemical composition of weathered biotite changed to that of katolinite with decreasing depth: increasing concentrations of silicon (Si) and aluminum (Al) and decreasing concentrations of potassium (K), iron (Fe), magnesium (Mg), manganese (Mn), and taitanium (Ti).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.338-338
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• 2013

Monolithic three-dimensional integrated circuits (3D-ICs) 구현 시 bonding 과정에서 발생되는 aluminum (Al) 이나 copper (Cu) 등의 interconnect metal의 확산, 열적 스트레스, 결함의 발생, 도펀트 재분포와 같은 문제들을 피하기 위해서는 저온 공정이 필수적이다. 지금까지는 polymer 기반의 bonding이나 Cu/Cu와 같은 metal 기반의 bonding 등과 같은 저온 bonding 방법이 연구되어 왔다. 그러나 이와 같은 bonding 공정들은 공정 시 void와 같은 문제가 발생하거나 공정을 위한 특수한 장비가 필수적이다. 반면, 두 물질의 합금을 이용해 녹는점을 낮추는 eutectic bonding 공정은 저온에서 공정이 가능할 뿐만 아니라 void의 발생 없이 강한 bonding 강도를 얻을 수 있다. Aluminum-germanium (Al-Ge) 및 aluminum-indium (Al-In) 등의 조합이 eutectic bonding에 이용되어 각각 $424^{\circ}C$ 및 $454^{\circ}C$의 저온 공정을 성취하였으나 여전히 $400^{\circ}C$이상의 eutectic 온도로 인해 3D-ICs의 구현 시에는 적용이 불가능하다. 이러한 metal 조합들에 비해 indium (In)과 tin (Sn)은 각각 $156^{\circ}C$ 및 $232^{\circ}C$로 굉장히 낮은 녹는점을 가지고 있기 때문에 In-Sn 조합은 약 $120^{\circ}C$ 정도의 상당히 낮은eutectic 온도를 갖는다. 따라서 본 연구팀은 In-Sn 조합을 이용하여 $200^{\circ}C$ 이하에서monolithic 3D-IC 구현 시 사용될 eutectic bonding 공정을 개발하였다. 100 nm SiO2가 증착된 Si wafer 위에 50 nm Ti 및 410 nm In을 증착하고, 다른Si wafer 위에 50 nm Ti 및 500 nm Sn을 증착하였다. Ti는 adhesion 향상 및 diffusion barrier 역할을 위해 증착되었다. In과 Sn의 두께는 binary phase diagram을 통해 In-Sn의 eutectic 온도인 $120^{\circ}C$ 지점의 조성 비율인 48 at% Sn과 52 at% In에 해당되는 410 nm (In) 그리고 500 nm (Sn)로 결정되었다. Bonding은 Tbon-100 장비를 이용하여 $140^{\circ}C$, $170^{\circ}C$ 그리고 $200^{\circ}C$에서 2,000 N의 압력으로 진행되었으며 각각의 샘플들은 scanning electron microscope (SEM)을 통해 확인된 후, 접합 강도 테스트를 진행하였다. 추가로 bonding 층의 In 및 Sn 분포를 확인하기 위하여 Si wafer 위에 Ti/In/Sn/Ti를 차례로 증착시킨 뒤 bonding 조건과 같은 온도에서 열처리하고secondary ion mass spectrometry (SIMS) profile 분석을 시행하였다. 결론적으로 본 연구를 통하여 충분히 높은 접합 강도를 갖는 In-Sn eutectic bonding 공정을 $140^{\circ}C$의 낮은 공정온도에서 성공적으로 개발하였다.

• 한국연소학회:학술대회논문집
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• 2004.11a
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• pp.175-180
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• 2004

Improving furnace efficiency is a high priority need for aluminum, glass, steel and other metal casting industries. Oxy-fuel combustion is considered to be one of the most effective method to improve thermal efficiency and reduce $NO_x$, SOx and $CO_2$ emissions for high temperature furnaces. The characteristics of an oxy-fuel flame, in particular its shape, radiation profile and exhaust gas composition are considerably different to those of an air-fuel burner. For this reason, a new approach is needed regarding factors such as burner design, power input levels, number and positioning strategies of burners and also control philosophies. In this paper will discuss the latest developments of high performance oxy-fuel combustion reheating furnace system. This high performance oxy-fuel combustion system will be shown to be technologically superior to other types of combustion systems in the areas of fuel efficiency, emissions and productivity.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.9
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• pp.1364-1372
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• 1997

In this paper, the forging of helical gears has been investigated. Punch is tooth-shaped as is the die insert. The punch compresses a cylindrical billet placed in a die insert. As a consequence the material of billet flows into the tooth region. The forging has been analysed by using the upper-bound method. A kinematically admissible velocity field has been developed, wherein, an involute curve has been introduced to represent tooth profile of the gear. Numerical calculations have been carried out to investigate the effects of various parameters, such as module, number of teeth, helix angle and friction factor on the forging of helical gears. Some forging experimentswere carried out with aluminum alloy to show the validity of the analysis. Good agreement was found between the predicted values of the forging load and obtained from the experimental results.

• Transactions of Materials Processing
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• v.28 no.6
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• pp.347-353
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• 2019

The porthole extrusion process is a classic metal forming process to produce complex cross-section shaped aluminum profile. It is very difficult to design porthole die and extrusion process because of the complex shape of extrusion die and internal metal flow. The main variables in this process are ram speed, initial billet and tool temperature, and die shape. In general, the metal flow of porthole extrusion process can be divided into two steps. During the first step, the billet is divided into several parts in the porthole die bridge. During the second step, the divided billets are welded in the welding chamber. In the welding chamber, the level of welding pressure is very important for the quality of the final product. The purpose of this study is to increase the welding pressure in the welding chamber by using a two stage welding chamber. The porthole extrusion die was designed by using the Taguchi method with orthogonal array. The effectiveness of the optimized porthole die was verified by using the finite element analysis.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.188-195
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• 1996

The AlSi etching process using the MERIE type reactor carried out with different process parameters such as C1$_{2}$ and N$_{2}$ gas flow rate, RF power and chamber pressure. The etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. As the N2 gas flow rate is increased, the AlSi etch rate is decreased and uniformity has remained constant within .+-.5%. The etch rate is increased and uniformity is decreased, according to increment of the C1$_{2}$ gas flow rate, RF power and chamber pressure. Selective etching of TEOS with respect to AlSi is decreased as the RF power is increased while it is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, on the other hand, selective etching of photoresist with respect to AlSi is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, it is decreased as the N$_{2}$ gas flow rate is increased.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2003.09a
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• pp.599-602
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• 2003

A new technique is presented to construct predictive models of plasma etch processes. This was accomplished by combining a backpropagation neural network (BPNN) and a random generator (RC). The RG played a critical role to control neuron gradients in the hidden layer, The predictive model constructed in this way is referred to as a randomized BPNN (RG-BPNN). The proposed scheme was evaluated with a set of experimental plasma etch process data. The etch process was characterized by a 2$^3$ full factorial experiment. The etch responses modeled are 4, including aluminum (Al) etch rate, profile angle, Al selectivity, and do bias. Additional test data were prepared to evaluate model appropriateness. The performance of RC-BPNN was evaluated as a function of the number of hidden neurons and the range of gradient. for given range and hidden neurons, 100 sets of random neuron gradients were generated and among them one best set was selected for evaluation. Compared to the conventional BPNN, the proposed RC-BPNN demonstrated about 50％ improvements in all comparisons. This illustrates that the RG-BPNN of multi-valued gradients is an effective way to considerably improve the predictive ability of current BPNN of single-valued gradient.

• Transactions of the Korean Society of Mechanical Engineers
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• v.9 no.6
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• pp.725-731
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• 1985

In this study the rigid-plastic finite element method is used in order to study the deformation characteristics of solid cylinder upsetting. The effects of friction and aspect ratios on the effective strain distribution, axial stresses at the die-material interface, radial displacements, strain components, grid distortion on the meridional cross-section and gradual changes of outer profile are studied analyzed and compared with the experiments for commercially pure aluminum and .alpha.-brass. The agreement between numerical (or theoretical)and experimental results is shown to be acceptable for the engineering purpose.

• Progress in Superconductivity
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• v.12 no.2
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• pp.114-117
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• 2011

We report our efforts on the development of Nb-based non-hysteretic Josephson junction fabrication process for quantu device applications. By adopting and modifying the existing Nb-aluminum oxide tunnel junction process, we develop a process for non-hysteretic Josephson junction circuits using metal-silicide as metallic barrier material. We use sputter deposition of Nb and $MoSi_2$, PECVD deposition of silicon oxide as insulator material, and ICP-RIE for metal and oxide etch. The advantage of the metal-silicide barrier in the Nb junction process is that it can be etched in $SF_6$ RIE together with Nb electrode. In order to define a junction area precisely and uniformly, end-point detection for the RIE process is critical. In this paper, we employed thin Al layer for the etch stop, and optimized the etch condition. We have successfully demonstrated that the etch stop properties of the inserted Al layer give a uniform etch profile and a precise thickness control of the base electrode in Nb trilayer junctions.