• Title/Summary/Keyword: Aluminum Oxide

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Top emission inverted organic light emitting diodes with $N_{2}$ plasma treated Al bottom cathodes

  • Kho, Sam-Il;Shon, Sun-Young;Kwack, Jin-Ho;Jung, Dong-Geun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.889-892
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    • 2003
  • Effects of $N_{2}$ plasma treatment of the Al bottom cathode on the characteristics of top emission inverted organic light emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$ emitting layer, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'diamine (TPD) hole transport layer, and an indium tin oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to $N_{2}$ plasma treatment before deposition of the $Alq_{3}$ layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of $AIN_x$ between the $Alq_{3}$ emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Ai bottom cathode subjected to $N_{2}$ plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.

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Effect of O2 Partial Pressure on AlOx Thin Films Prepared by Reactive Ion Beam Sputtering Deposition

  • Seong, Jin-Wook;Yoon, Ki-Hyun;Kim, Ki-Hwan;Beag, Young-Whoan;Koh, Seok-Keun
    • Journal of the Korean Ceramic Society
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    • v.41 no.5
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    • pp.364-369
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    • 2004
  • The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.

Current-Voltage Characteristics of Molecular Electronic Devices Using a Amino-Style Derivatives (Amino-style 유도체를 이용한 분자 전자 소자의 전류-전압 특성에 관한 연구)

  • Kim, So-Young;Koo, Ja-Ryong;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.882-885
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    • 2004
  • Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

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The effects of buffer layer using $\alpha$-septithiophene on the organic light emitting diode (유기 전기 발광 소자에서 $\alpha$-septithiophene을 이용한 buffer layer의 영향)

  • Yi, Ki-Wook;Lim, Sung-Taek;Shin, Dong-Myung;Park, Jong-Wook;Park, Ho-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.53-56
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    • 2002
  • The effect of $\alpha$-septithiophene (${\alpha}-7T$) layers on the organic light emitting diode(OLED) was studied. The ${\alpha}-7T$ was used for a buffer layer in OLED. Hole injection was investigated and improved emission efficiency. The OLEDs structure can be described as indium tin oxide(ITO)/ buffer layer / hole transporting layer / emitting layer / electron transporting layer / LiF / Al. The hole transporting layer were composed of N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphenyl-4,4-diamine(TPD), and N,N-di(naphthalene-1-ly)-N,N-diphenyl-benzidine( ${\alpha}$-NPD). The emitting layer, and electron transporting layer consist of tris(8-hydroxyquinolinato) aluminum($Alq_3$). All organic layer were deposited at a background pressure of less than $10^{-6}$ torr using ultra high vacuum (UHV) system. The ${\alpha}-7T$ layer can substitute the hole blocking layer, and improve hole injection properties.

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Electrical properties of $Al_2O_3$/GaN MIS capacitor deposited by Remote Plasma ALD (Remote Plasma ALD법으로 제작한 $Al_2O_3$/GaN MIS 커패시터의 전기적 특성)

  • Kwak, No-Won;Yun, Hyeong-Sun;Lee, Woo-Seok;Kim, Ka-Lam;Kim, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.13-14
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    • 2008
  • $Al_2O_3$ thin films were deposited on GaN (0001) by remote plasma atomic layer deposition (RPALD) technique using trimethylaluminum (TMA) precursor and oxygen radicals in the temperature range of 25 ~ $500^{\circ}C$. Growth rate per cycle was varied with substrate temperature from 1.8 $\breve{A}$/ cycle at $25^{\circ}C$ to 0.8 $\breve{A}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_2O_3$ thin films was studied using X-ray photo electron spectroscopy (XPS). Excellent electrical properties of $Al_2O_3$/GaN MIS capacitor were grown at $300^{\circ}C$ process temperature.

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Evaluation of Bond Strength in cp-Ti and Non-precious Metal-Ceramic System Using a Gold Bonding Agent (티타늄과 비귀금속 합금에 중간층으로 적용한 Au bonding agent의 금속-도재 결합에 대한 평가)

  • Lee, Jung-Hwan;Ahn, Jae-Seok
    • Journal of Technologic Dentistry
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    • v.31 no.4
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    • pp.15-23
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    • 2009
  • The aim of this study was to evaluate the bond strength of using a Au bonding agent applied on cp-Ti and nonprecious metal-gold-ceramic system. Metallic frameworks(diameter: 5mm, height: 20mm)(N=56, n=7per group) cast in Ni-Cr alloy, Co-Cr alloy and cp-Ti were obtained using acrylic templates and airborne particle abraded with $110{\mu}m$ aluminum oxide. Au bonding agent was applied on wash opaque firing as intermediate layer. SEM and SEM/EDS line profile were performed on the cutting the cross-section of the metal substrate-porcelain with intermediate Au coating. Groups were tested using shear bond strength(SBS) testing at 0.5mm/min. The mean SBS values for the ceramic-Au layer-metal combination were significantly higher than those ceramic-metal combination. While ceramic-Au layer-cp-Ti combinations failed to increase bond strength instead of using a titanium bonding porcelain. The appication of using Au intermediate layer significantly improve the bond strength combination with metal-ceramic system.

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An Experimental Study about The Effect of Solid Particle Seeding on Thermal Characteristics of Hydrogen Flame (고체 입자첨가가 수소화염의 열특성에 미치는 영향에 관한 실험적 연구)

  • Kim, Jung-Ju;Baek, Seung-Wook;Kim, Han-Seok;Choi, Joon-Won
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.26 no.11
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    • pp.1503-1512
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    • 2002
  • From the view of the environmental protection against the use of fossil fuels, a great of efforts have been exerted to find an alternative energy source. Hydrogen may become an alternative However the product species of the hydrogen flame is only $H_2O$, which emits only non-luminous radiation so the radiation from it is much smaller than that for a hydrocarbon flame. In this study, the authors designed and fabricated a laboratory scale test furnace to study thermal characteristics of hydrogen-air diffusion flame. In addition. the effects of addition of reacting as welt as non-reacting solid particles were experimentally investigated. Among the total heat flux to the wall, about 75 % was occupied by radiation while 25% by convection. When the aluminum oxide (Al$_2$O$_3$) particles were added, the radiative heat flux was reduced due to heat blockage effects. On the other hand, the total as well as the radiative heat flux was increased when the carbon particles were seeded, since the overall temperature increased. The effects of swirl and excess air ratio were also examined.

Characteristic Analysis of Nano-hole Array Optical Filter having Psychological Protection for Color Recognition (색 인지에 대한 심리보호효과를 가지는 나노홀어레이 광학필터 특성 분석)

  • Kang, Tae Young;Ahn, Heesang;Shin, Dong-Myeong;Hong, Suck Won;Kim, Kyujung;Lee, Donghoon
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.15 no.6
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    • pp.95-100
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    • 2016
  • We suggest and simulate an optical filter that a red wavelength range cannot transmit to protect the psychological stress that originates from the cognition of red color in emergency medical technicians. When a nanohole hexagonal array is fabricated on gold film using Anodic Aluminum Oxide (AAO), the blocked wavelength can be tuned by the hole diameter and film thickness. The characteristic of the transmittance for normal incident white light is simulated with Finite Element Method (FEM) in the MATLAB platform. Although the transmittance of the overall wavelength is reduced by 50% by the gold film, the transmittance of the red wavelength range is decreased by over 87%.

Cooling Performance of Liquid CPU Cooler using Water/PG-based $Al_2O_3$ Nanofluids (물/PG-기반 $Al_2O_3$ 나노유체를 적용한 수냉식 CPU 쿨러의 냉각성능)

  • Park, Y.J.;Kim, K.H.;Lee, S.H.;Jang, S.P.
    • Journal of ILASS-Korea
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    • v.19 no.1
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    • pp.19-24
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    • 2014
  • In this study, the cooling performance of a liquid CPU cooler using the water/propylene glycol(PG)-based $Al_2O_3$ nanofluids is experimentally investigated. Water/PG-based $Al_2O_3$ nanofluids are manufactured by two-step method with ultrasonic energy for 10 hours. The volume fractions of the nanofluids are 0.25% and 0.35%. Thermal conductivity and viscosity of the nanofluids are measured to theoretically predict the thermal performance of the liquid CPU cooler using performance factor. Performance factor results indicate that the cooling performance of the liquid CPU cooler can be improved using the manufactured nanofluids. To evaluate the cooling performance of the liquid CPU cooler experimentally, temperature differences between ambient air and heater are measured for base fluid and nanofluids respectively. Based on the results, it is shown that performance of the liquid CPU cooler using $Al_2O_3$ nanofluids is improved maximum up to 8.6% at 0.25 Vol.%.

Development of ELID Monitoring System and its Application to ELID Grinding of Structural Ceramics (ELID 연삭 모니터링 시스템의 개발과 구조 세라믹스 적용 사례)

  • Kwak, Tae-Soo;Kim, Gyung-Nyun;Kwak, Ihn-Sil
    • Journal of the Korean Society for Precision Engineering
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    • v.30 no.12
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    • pp.1245-1251
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    • 2013
  • This study has focused on development of ELID monitoring system and its application to ELID grinding of structural ceramics. ELID monitoring system was consisted of grinding equipment, ELID power supply, grinding wheel, electrode and monitoring program. It can give a real time data to check spindle grinding resistance, wheel revolution, dressing current and voltage in ELID grinding process. The performance of developed system was evaluated by applying to grinding of structural ceramics, silicon carbide and alumina. As the results of experiments, monitored data for spindle resistance and ELID dressing current was useful to check steady-state ELID grinding process. From the comparison of spindle resistance between ELID grinding and conventional grinding process according to change of depth of cut, it could be confirmed that the spindle resistance in ELID grinding was lower than conventional grinding process.