• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.378-383
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• 2004

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten(W) on SiO$_2$ layer, the Ti/TiN barrier layer is usually deposited onto SiO$_2$ for increasing adhesion ability with W film. Generally, for the W-CMP(chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidant on the polishing selectivity of W/Ti/TiN layer was investigated. The alumina(A1$_2$O$_3$)-based slurry with $H_2O$$_2$ as the oxidizer was used for CMP applications. As an experimental result, for the case of 5 wt％ oxidizer added, the removal rates were improved and polishing selectivity of 1.4:1 was obtained. It was also found that the CMP characteristics of W and Ti metal layer including surface roughness were strongly dependent on the amounts of $H_2O$$_2$ oxidizer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.88-91
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• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina ($Al_2O_3$) abrasive containing slurry with $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

• 한국재료학회지
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• 제9권9호
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• pp.865-871
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• 1999

지르콘 쉘 몰드를 제조하여 소결 온도 및 시간에 따른 소결거동이 기계적특성에 미치는 영향을 관찰하였다. $1000^{\circ}C$에서 1.5시간동안 소결 한 쉘 몰드의 1차 코팅 표면층에서 미세균열의 크기 및 수가 극대화되었으며 소결온도 및 시간이 증가할수록 상온강도와 기공의 비표면은 감소하였다. 1차 소결 후 $1500^{\circ}C$에서 4시간동안 소결 처리한 주형의 고온변형거동은 백업층과 하중의 역방향으로 스터코와 지르콘 슬러리의 경계면을 따라 변형이 발생하였다. 1차 코팅층에서 알루미나 스터코와 지르콘 슬러리의 열팽창계수 차이와 백업 코팅층에서 지르콘 슬러리간의 입도 차이가 고온변형시험 중 역변형을 일으킨 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.33-36
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• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina $(Al_2O_3)$ abrasive containing slurry with 5 % $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with 5 % $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.378-379
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• 2009

High intensity metal halide discharge lamp performance, specifically the generated luminous flux and light color content, depends critically on the arc tube design. Factors influencing the design and consequent lamp efficacy include : lamp size, geometry, arc tube composition, fill chemistry, electrode design and excitation modes. Shaping of Polycrystalline Alumina(PCA) can be realized by conventional ceramic processes. Several processes are applied nowadays. Well-known in the ceramic high pressure field for decades are the pressing and the extrusion method. Newly developed slurry and precious forming technologies give the one-body seamless tubes, which improve thickness uniformity and lighting performance. Now, we reported some optical properties with different arc tube structures of ceramic metal halide lamps.

• 한국세라믹학회지
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• 제33권5호
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• pp.479-484
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• 1996

The tribological properties of ceramics are very important in the application to engineering ceramic parts such as mechanical seal slurry valve disc and so on. In this study the effect of graphite addition on the mechanical and tribological properties of RBSC/graphite composites were investigated. The composites were prepared by adding graphite powder to the mixture of SiC powder metallic siliconcarbon black and alumina. Bending strength water absorption friction coefficient the amount of worn out material at a certain time and maximum surface roughness(Rmax) of the prepared composites were measured and crystalline phases were examined with XRD. The composite containing 5 vol% graphite powder showed improved bending strength due to high green density and decreased friction coefficient and wear resistance. The friction coefficient and the wear resistance of the composite were increased by adding graphite powder up to 10 vol% They decreased however as increasing the amount of graphite powder more that 10vol% There was no linear relationship between the tribological properties and bending strength of the composites.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 춘계학술대회 논문집
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• pp.854-857
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• 2000

Chemical Mechanical Polishing(CMP) has been accepted as one of the essential processes for VLSI fabrication. However, as the polishing process continues, pad pores get to be glazed by polishing residues, which hinder the supply of new slurry. This defect makes removal rate decrease with a number of polished wafer and the desired within-chip planarity, within wafer and wafer-to-wafer nonuniformity are unable to be achieved. So, pad conditioning is essential to overcome this defect. The eletroplated diamond grit disk is used as the conventional conditioner, And alumina long fiber, the .jet power of high pressure deionized water and vacuum compression are under investigation. But, these methods have the defects like scratches on wafer surface by out of diamond grits, subsidences of pad pores by over-conditioning, and the limits of conditioning effect. To improve these conditioning methods. this paper presents the Characteristics of Ultrasonic conditioning aided by cavitation.

• 전기학회논문지
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• 제57권12호
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• pp.2244-2248
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• 2008

High intensity metal halide discharge lamp performance, specifically the generated luminous flux and light color content, depends critically on the arc tube design. Factors influencing the design and consequent lamp efficacy include : lamp size, geometry, arc tube composition, fill chemistry, electrode design and excitation modes. Shaping of Polycrystalline Alumina(PCA) can be realized by conventional ceramic processes. Several processes are applied nowadays. Well-known in the ceramic high pressure field for decades are the pressing and the extrusion method. Newly developed slurry and precious forming technologies give the one-body seamless tubes, which improve thickness uniformity and lighting performance. Now, we reported some optical properties with different arc tube structures of ceramic metal halide lamps.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.258-259
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• 2006

New powder compaction process, in which a Bingham semi-solid/fluid mold is utilized, is developed to fabricate micro parts. In the present process, a powder material is filled as slurry in a solid wax mold, dried and compressed. The wax is heated during compaction and becomes semi-solid state, which can acts as a pressurized medium for isostatic compaction. Since the compacted micro parts are very fragile, the mold's temperature is controlled to higher than its melting point during unloading, to avoid breakage of the compacts. To demonstrate effectiveness of this process, some micro compacts of alumina are shown as examples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1292-1295
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• 2004

본 연구는 Cu CMP공정 중 알루미나 연마입자의 wafer 표면에서의 점착과 오염을 AFM (Atomic Force Microscopy)을 사용하여 슬러리내에서 점착력 측정과 실제 연마 후 wafer 표면의 오염을 실험적으로 비교 평가하였다. 연마입자의 adhesionn force 측정에 있어서도 역시 wafer들의 zetapotential 결과와 잘 일치하였으며, 모든 wafer 종류에 관계없이, 산성 영역에서 염기성영역의 슬러리가 적용됨에 따라 adhesion force가 작아짐을 확인할 수 있었다. 특히 FSG wafer의 zetapotential 결과는 비록 산성 분위기에서는 양성 전하값을 나타내었으나, 염기성 분위기의 pH에서는 급격하게 음성 전하값을 나타내었고, 이는 adhesionn force결과와 FESEM 결과와 잘 일치하였다.