• 제목/요약/키워드: Alloy target

검색결과 113건 처리시간 0.024초

마그네트론 코-스퍼터링에 의한 구리-니켈 합금박막 증착시 타겟의 구성방법에 따른 물성 분석 (Characterization of Cu-Ni alloy thin films deposited by magnetron co-sputtering as a function of target configurations)

  • 서수형;이재엽;박창균;박진석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.1485-1487
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    • 2000
  • A variety of target configurations in sputtering process have been proposed to deposit various structures of thin film alloys and compound films. In this study, we presented the comparative experimental results regarding to the characterization of properties of Cu-Ni thin films deposited by using a magnetron co-sputtering method, as a function of target configurations; one is using a single target with varying the area of Ni chips attached on the Cu target and another is using a dual-type target with two targets of Ni and Cu separated each other. Structural(d-spacing, crystal orientation, crystallite size, cross-sectional morphology) and electrical(resistivity) properties of deposited films are characterized and compared as a function of target configurations as well as deposition conditions.

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Formation Temperature Dependence of Thermal Stability of Nickel Silicide with Ni-V Alloy for Nano-scale MOSFETs

  • Tuya, A.;Oh, S.Y.;Yun, J.G.;Kim, Y.J.;Lee, W.J.;Ji, H.H.;Zhang, Y.Y.;Zhong, Z.;Lee, H.D.
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.611-614
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    • 2005
  • In this paper, investigated is the relationship between the formation temperature and the thermal stability of Ni silicide formed with Ni-V (Nickel Vanadium) alloy target. The sheet resistance after the formation of Ni silicide with the Ni-V showed stable characteristic up to RTP temperature of $700\;^{\circ}C$ while degradation of sheet resistance started at that temperature in case of pure-Ni. Moreover, the Ni silicide with Ni-V indicated more thermally stable characteristic after the post-silicidation annealing. It is further found that the thermal robustness of Ni silicide with Ni-V was highly dependent on the formation temperature. With the increased silicidation temperature (around $700\;^{\circ}C$), the more thermally stable Ni silicide was formed than that of low temperature case using the Ni-V.

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알루미늄 합금 피스톤과 스틸 단조 피스톤의 내구성능에 관한 실험적 연구 (An Experimental Study on Durability Performance of Aluminum Alloy Piston and Steel Forging Piston)

  • 김현철;이종인;박종호
    • 한국자동차공학회논문집
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    • 제12권6호
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    • pp.54-59
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    • 2004
  • The goal of this research is to confirm reliable durability and evaluate the engine performance of the current aluminum alloy piston and the newly developed steel forging piston. For such purpose, the test environment was built with 2.91 target engine mounted on the engine dynamometer and additional exhaust gas analysis system. Using the test environment, engine performance test was conducted, and durability test was also conducted using a dedicated piston durability test equipment for 400,000 km. As a result of the experiment, similar durability was appeared for both aluminum piston and steel piston, and the engine output power and torque are slightly reduced because of $158\%$ heavier weight of the steel piston compare to the aluminum alloy piston.

Figure of Merit for Deposition Conditions in ITO Films

  • Kim, H.H.;Cho, M.J.;Park, W.J.;Lee, J.G.;Lim, K.J.
    • Transactions on Electrical and Electronic Materials
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    • 제3권2호
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    • pp.6-9
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    • 2002
  • Indium tin oxide (ITO) films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\_$sh/ and T$\^$10// R$\_$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 ($\times$10$\^$-3/Ω$\^$-1/), respectively.

Control of Deposition Parameters in ITO Films: Figure of Merit

  • Kim, H.H.;Park, C.H.;Cho, M.J.;Lim, K.J.;Shin, J.H.;Park, K.J.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.398-401
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    • 2001
  • Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of $T/R_{sh}$ and $T^{10}/R_{sh}$ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and $8.95({\times}10^{-3}\Omega^{-1})$ respectively.

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H13 공구강의 전처리에 따른 Mo-Cu-N 코팅의 기계적 특성 (Mechanical Properties of MoN-Cu Coatings according to Pre-treatment of AISI H13 Tool Steel)

  • 박현준;문경일;김상섭
    • 한국표면공학회지
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    • 제53권6호
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    • pp.343-350
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    • 2020
  • The degradation of mechanical properties of nitride coatings to steel substrates is one of the main challenges for industrial applications. In this study, plasma nitriding treatment was used in order to increase the mechanical properties of Mo-Cu-N coating to the H13 tool steel. The nanostructured Mo-Cu-N coating was deposited using pulsed DC magnetron sputtering method with a single alloy Mo-Cu target. Mechanical properties of MoN-Cu coated samples after nitriding were found to be relatively better than non-nitrided MoN-Cu coating.

Control of Deposition Parameters in ITO Films: Figure of Merit

  • Kim, H.H.;Park, C.H.;M.J. Cho;K.J. Lim;J.H. Shin;Park, K.J.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.398-401
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    • 2001
  • Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\sub$sh/ and T$\^$10//R$\sub$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 (x10$\^$-3/Ω$\^$-1/), respectively.

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The invariant design of planar magnetron sputtering TFT-LCD

  • Yoo, W.J.;Demaray, E.;Hosokawa;Pethe, R.
    • Journal of Korean Vacuum Science & Technology
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    • 제3권2호
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    • pp.101-106
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    • 1999
  • The main consideration factor to design a magnetron of the sputtering system for TFT-LCD metallization is high sheet resistance (Rs) uniformity which is provided by the high target erosion and high current efficiency. The present study has developed a rectangular magnetron for TFT-LCD to bve considered full target erosion and high film uniformity. After an aluminum-2 at.% and alloy target was installed in a magnetron source and the film was deposited on the glass of 600${\times}$720 mm, the Rs uniformity of the deposited film was measured as functions of the magnet tilt and magnet scanning configuration. And the target erosion profile was observed with the target voltage. When sputtered at 4mtorr and 10kW, the magnet tilt for the high Rs uniformity of 8.38% was 7mm. The plasma voltage at the dwell home and end for full-face target erosion, when scanned the magnetron was 120% compared to the mean voltage of the other area.

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반응성 DC 마그네트론 스퍼터링법으로 증착한 ITO 박막의 전기적 특성 평가 (Electrical Properties of ITO Thin Film Deposited by Reactive DC Magnetron Sputtering using Various Sn Concentration Target)

  • 김민제;정재헌;송풍근
    • 한국표면공학회지
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    • 제47권6호
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    • pp.311-315
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    • 2014
  • Indium tin oxide (ITO) thin films (30 nm) were deposited on PET substrate by reactive DC magnetron sputtering using In/Sn(2, 5 wt.%) metal alloy target without intentionally substrate heating during the deposition under different DC powers of 70 ~ 110 W. The electrical properties were estimated by Hall-effect measurements system. The resistivity of ITO thin film deposited using In/Sn (5 wt.%) metal alloy target at low DC power increased with increasing annealing time. However, they increased with increasing annealing time at high DC power. In the case of ITO (Sn 2 wt%), we can't find clear change in resistivity with increasing annealing time. However, carrier density and mobility showed difference behavior due to change of oxygen vacancy.