• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.82-85
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• 2008

We are working towards large-area arrays of thin film transistors on polymer substrates using roll-to-roll (R2R) processes exclusively. Self-aligned imprint lithography (SAIL) is an enabler to pattern and align submicron features on meter-scaled flexible substrates in the R2R environment. The progress, current status and remaining issues of this new fabrication technology are presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.120.2-120.2
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• 2015

We propose a novel direct writing technique with a femtosecond laser enabling selective modification of not only the morphology of conducting polymer thin films but also the orientation and alignment of the polymer crystal. Surface relief gratings resulting from photoexpansion on P3HT:PCBM and PEDOT:PSS thin films were fabricated by femtosecond laser direct writing. The photoexpansion was induced at laser fluence below the ablation threshold of the thin film. The morphology (size and shape) of photoexpansion could be quantitatively controlled by laser writing parameters such as focused beam size, writing speed, and laser fluence. GIWAX results showed that face-on P3HT crystals were largely increased in the photoexpansion in comparison with pristine region of the thin film. In addition, the face-on P3HTs in the photoexpansion were aligned with their orientation along the polarization of the laser. The micro-RAMAN spectra confirmed that neither chemical composition change nor the polymer chain breaking was observable after femtosecond laser irradiation. We believe that this laser direct writing technique opens a new door to the fabrication of more efficient OPVs via non-contact, toxic-free approach.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.62 no.4
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• pp.223-226
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• 2013

In this study, we investigated the electro-optical(EO) characteristic of fringe-field switching(FFS) mode cell by the two kinds of ultraviolet(UV) alignment method on the organic thin film(polyimide: PI). The suitable organic layersfor FFS cell and the aligning capabilities of nematic liquid crystal(NLC) using the in-situ photoalignment method were studied Disclination is observed after conventional photoalignment method for 1h, and in-situ photoalignment method for 1h. Monodomain alignment of the NLC can be observed via in-situ photoalignment method for 2h and 3h. It is considered that NLC alignment is due to photo-depolymerization of the polymer with oblique non-polarized UV irradiation on PI surface. An unstable V-T curve of UV-aligned FFS-LCD with conventional photoalignment method can be achieved. However, a stable V-T curve of UV-aligned FFS-LCD with in-situ photoalignment method(1h), and V-T curve of UV-aligned FFS-LCD with in-situphotoalignment method was much stable comparing with that of other UV-aligned FFS-LCD's. As a result, more stable EO performanceof UV-aligned FFS-LCD with in-situphotoalignment method for 3h is obtained than that of the other UV-aligned FFS-LCD's.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1085-1087
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• 1995

A large leakage current may be one of the critical issues for poly-silicon thin film transistors(poly-Si TFTs) for LCD applications. In order to reduce the leakage current of poly-Si TFTs, several offset gated structures have been reported. However, those devices, where the offset length in the source region is not same as that in the drain region, exhibit the asymmetric electrical performances such as the threshold voltage shift and the variation of the subthreshold slope. The different offset length is caused by the additional mask step for the conventional offset structures. Also the self-aligned implantation may not be applicable due to the mis-alignment problem. In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photo resistor reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate from both sides of the main gate. The poly-Si channel layer below the offset oxide is protected from the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of our new device is the offset lesion due to the offset oxide. Our experimental results show that the offset region, due to the photo resistor reflow process, has been successfully obtained in order to fabricate the offset gated poly-Si TFTs. The advantages of the proposed device are that the offset length in the source region is the same as that in the drain region because of the self-aligned implantation and the proposed device does not require any additional mask process step.

• Current Optics and Photonics
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• v.7 no.5
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• pp.569-573
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• 2023

We utilized terahertz time-domain spectroscopy (THz-TDS) to measure the thickness and electrical properties of nickel-chromium (Ni-Cr) films. This technique not only aligns well with traditional methods, such as haze-meter and transmission-densitometer measurements, but it also reveals the electrical properties and thickness of films down to a few tens of nanometers. The complex conductivity of the Ni-Cr thin films was extracted using the Tinkham formula. The experimental values closely aligned with the Drude model, indicating the reliability of our Ni-Cr film's electrical and optical constants. The thickness of Ni-Cr was estimated using the complex conductivity. These findings emphasize the potential of THz-TDS in quality control of metallic nanofilms, pointing toward an efficient and nondestructive test (NDT) for such analyses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.185-185
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• 2009

The aligned liquid crystals (LCs) display on SiNx thin films using ion-beam (IB) irradiation was studied with controllability ofpretilt angle depending on incident energies of the IB. Plasma-enhanced chemical vapor deposition (PECVD) was used to orient the LCs on SiNx alignment films. The LCs alignment property for the SiNx thin films were observed to verify the practical application potential (figure1). A good LCs alignment of vertical alignment LCs cells on SiNx thin film surfaces irradiated with incident IB energy of 1800eV was achieved. Also, a good LC alignment by the IB irradiation on the SiNx thin film surface was observed at an annealing temperature of $180^{\circ}C$. However, the alignment defects of the nematic liquid crystal was observed at an annealing temperature above $230^{\circ}C$. The atomic force microscopy (AFM) images of LCs on SiNx thin film surfaces irradiated with IB energy was used for the surface analysis.

• Journal of Satellite, Information and Communications
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• v.7 no.3
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• pp.54-57
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• 2012

Nematic liquid crystal (NLC) alignment effects on SiOF layers via ion-beam (IB) irradiation for four types of incident energy were successfully studied. The effect of fluorine addition on silicon oxide film properties as a function of $SiOF_4/O_2$ gas flow ration was investigated. The SiOF thin film exhibits good chemical and the thermal stability of the SiOF thin film were sustained as function of the NLC alignment until $200^{\circ}C$ Also, the response-time characteristics of aligned LCD based on SiOF film were studied.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.818-821
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• 2006

We demonstrate the vertical alignment of liquid crystal on $a-SiO_x$ film surface using the ion beam exposure. Liquid crystal can be aligned vertically by the rotational oblique evaporation of $a-SiO_x$ film. However, the electro-optic switching behavior of liquid crystal along random directions results in disclination lines. We found that we can achieve highly uniform alignment of liquid crystal without disclination lines by using the ion beam exposure. We found from XRD and XPS data that the vertical alignment can be achieved when x approaches 1.5 at the $a-SiO_x$ film surface. We have shown that the pretilt angle can be controlled by changing ion beam parameters, such as the ion beam energy, the angle of incidence, and the exposure time. We found that whether liquid crystals can be aligned vertically or homogeneously on $a-SiO_x$ film can be predicted simply by measuring the change in optical transmittance by deposition of $a-SiO_x$ thin film layers. We also have shown that a liquid crystal cell aligned vertically by the ion beam exposure exhibits the voltage-transmittance curve similar to that of a rubbed polyimide cell.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.32-37
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• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• Journal of Magnetics
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• v.7 no.2
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• pp.51-54
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• 2002

The crystallization of amorphous Ba-ferrite/sapphire(001) thin films was studied in real-time synchrotron x-ray scattering experiments. In the sputter-grown amorphous films, we found the existence of epitaxial $Fe_3O_4$ interfacial crystallites (50-${\AA}$-thick), well aligned $[0.03^circ$full-width at half-maximum (FWHM)] to the sapphire [001] direction. The amorphous precursor was crystallized to epitaxial Ba-ferrite and \alpha-Fe_2O_3$grains in two steps; i) the nucleation of crystalline \alpha-Fe_2O_3$ phase started at $300^circ{C}$ together with the transformation of the $Fe_3O_4$ crystallites to the \alpha-Fe_2O_3$ crystallites, ii) the nucleation of Ba-ferrite phase occurred at temperature above $600^circ{C}$. In the crystallized films irrespective of the film thickness, the crystal domain size of the \alpha-Fe_2O_3$grains was about 250 ${\AA}$ in the film plane, similar to that of the Ba-ferrite grains.