• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.99-102
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• 2010

Large-scaled area and aligned copper oxide nanowires have been synthesized by a vapor-phase approach to the facial synthesis of copper oxide nanowires supported on the surface of a copper gasket. The effects of annealing temperature and time were investigated. Long and aligned nanowires can only formed within a narrow temperature range from 400 to $500^{\circ}C$ for 4 hrs. Annealing copper gasket in static air produces large-area, uniform, but not well vertically aligned nanowires along the copper gasket surface. The surface of copper gasket is converted into bicrystal CuO nanowires was observed after the copper gasket is annealed under static air condition.

• Advances in nano research
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• v.2 no.4
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• pp.219-225
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• 2014

A simple preparation method on creating superhydrophobic surface using non-aligned carbon nanotubes (CNTs) was demonstrated. Superhydrophobic CNT thin films were prepared by doping a sonicated mixture of CNTs and chloroform onto a glass slide. Water contact angles of the CNT thin films were measured using a contact angle goniometer. The thin films were characterized using laser microscope and scanning electron microscope. Experimental results revealed that the highest average contact angle of $162{\pm}2^{\circ}$ was achieved when the films' thickness was $1.628{\mu}m$. The superhydrophobic surface was stable as the contact angle only receded from $162{\pm}2$ to $157{\pm}2^{\circ}$ after 10 min under normal atmospheric condition.

• Journal of Korea Multimedia Society
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• v.18 no.10
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• pp.1157-1163
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• 2015

In this paper, we propose a registration method of 3d facial scan data and CBCT data using voxelization and distance map. First, two data sets are initially aligned by exploiting the voxelization of 3D facial scan data and the information of the center of mass. Second, a skin surface is extracted from 3D CBCT data by segmenting air and skin regions. Third, the positional and rotational differences between two images are accurately aligned by performing the rigid registration for the distance minimization of two skin surfaces. Experimental results showed that proposed registration method correctly aligned 3D facial scan data and CBCT data for ten patients. Our registration method might give useful clinical information for the oral surgery planning and the diagnosis of the treatment effects after an oral surgery.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.2
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• pp.170-177
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• 1992

Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.75-82
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• 2004

We have studied the influence of rubbing directions on electro-optic characteristics of the fringe field driven hybrid aligned nematic liquid crystal (LC) cell by computer simulation. When a LC with positive dielectric anisotropy is used, the results show that the driving voltage and transmittance decreases as the rubbing direction with respect to horizontal electric field direction increases. The reason for decrease in light transmission is the increase of tilt angle on the center of common electrode. In this paper, we have studied how the rubbing angle effects on the transmittance of the cell by investigating a distribution of electric field and LC director.

• Transactions on Electrical and Electronic Materials
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• v.4 no.4
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• pp.7-9
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• 2003

Viewing angle characteristics of a nematic liquid crystal (NLC) using a in-plane driven (IPD) vertical alignment (VA) cell without a negative compensation film on a homeotropic alignment layer were studied. Good voltage-transmittance (V - T) curves were obtained using the rubbing aligned IPD- VA cell. However, instability and low transmittances of V - T characteristics in photo aligned IPD- VA cell was measured. The EO performance of a rubbingaligned IPD- VA cell without a negative compensation film was wider than that of photoaligned IPD- VA cell and conventional VA cell. Also, the fabrication processes using the rubbing aligned IPD- VA cell mode be carried out with only one-sided rubbing.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.443-450
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• 1995

A directional coupler which on the X-cut $LiNbO_3$ substrate is fabricated by using proton exchange method and self-aligned method. After proton exchange process, the waveguide is formed by annealing process. The relation ship between refractive index change of waveguide and maximum output was studied along with the annealing time. A self-aligned method was used to simplify the fabrication process of the waveguide and to maximize the efficiency of electric field. The on-off state of modulator has been observered with the switching of the directional coupler by the electric field effect and also the switching voltage of the directional coupler has been measured with 8.0 [V].

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.415-419
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• 2003

Carbon nanotubes were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition method. The possibility of carbon nanotubes formation was related to the thickness of nickel catalyst. The growth behavior of carbon nanotubes under the identical thickness of nickel catalyst was strongly dependent on the magnitude of the applied bias voltage. High negative bias voltage (-400 V) gave the vertically well-aligned carbon nanotubes. The vertically well-aligned carbon nanotubes have the multi-walled structure with nickel catalyst at the end position of the nanotubes.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.783-787
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• 2014

This paper presents an improved vertical alignment nematic liquid crystal mode characterized by the protrusions or slits of the top substrate and additional stripe type common electrodes with polarity switching of the bottom substrate to improve multi-domain vertically aligned (MVA) and patterned vertically aligned (PVA) nematic modes. MVA and PVA modes have disadvantages such as an LC disclination in the vicinity of the middle region of electrodes between the top and bottom protrusions in MVA mode or the top and bottom slits in PVA mode. Therefore, the stripe type common electrode generating a horizontal electric field and the protrusion or slit producing some pretilt of liquid crystals (LCs) were used to improve the LC disclination, which influences the transmittance and response speed. The simulation results showed that the proposed VA mode has higher transmittance than the MVA and PVA modes. As a result, the proposed VA mode can improve the response speed and transmittance remarkably, which makes it useful for upgrading the LCD display quality.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.12
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• pp.1841-1851
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• 1990

Self-aligned gate GaAs MESFETs using ion beam deposited tungsten applicable to GaAs LSI fabrication process have been fabricated. Silicon implanted samples were annealed using isothermla two step RTA process and conventional one step RTA process. The electrical and physicla characteristics of annealed samples were investigated using Hall and I-V measurements. As results of measurements, activation characteristics of the isothermal two step RTA process are better than those of one step annealed ones. Using the developed processes, GaAs SAFETs (Self-Aligned Gate FET) have been fabricated and electdrical characteirstics are measured. As results, subthreshold currents of SAGFETs are 6x10**-10 A/\ulcorner, that is compatible to conventional MESFET, maximum transconductances of 0.75\ulcorner gate MESFET using one step RTA process and 2\ulcorner gate MESFET using isothermal two step RTA process are 18 mS/mm, 41 mS/mm respectively.