• 제목/요약/키워드: AlN thin films

검색결과 337건 처리시간 0.031초

Pulsed Laser Deposition을 이용한 Zn0.4Fe2.6O4 박막의 합성과 그 결정성 및 자기적 특성의 연구 (Growth of Zn0.4Fe2.6O4 Thin Films using Pulsed Laser Deposition and their Crystal Structural and Magnetic Properties)

  • 장안나;송종현;박창엽
    • 한국자기학회지
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    • 제21권3호
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    • pp.88-92
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    • 2011
  • Pulsed Laser Deposition 방법을 사용하여 $Zn_{0.4}Fe_{2.6}O_4$ 박막을 증착하였으며 이의 결정성 및 자기적 특성을 증착온도의 함수로 조사하였다. 증착온도가 $300^{\circ}C$었을 경우 박막은 코런돔(corundom) ${\alpha}-$Fe_2O_3$ 또는 워자이트(wurzite) ZnO 구조를 지니고 있었으나 증착온도가 $500^{\circ}C$로 증가되었을 경우에는 $Zn_{0.4}Fe_{2.6}O_4(111)/Al_2O_3(0001)$의 결정 방향을 지닌 매우 안정된 역스피넬(inverse spinel) 성장이 이루어졌으며 또한 표면의 거칠기도 증착온도가 $300^{\circ}C$ 일 때 보다 더 평평하여졌다. 이러한 역스피넬 $Zn_{0.4}Fe_{2.6_O_4$ 박막에서는 X-선 산란 분석 결과 ${\alpha}-$Fe_2O_3$, ZnO에 해당하는 픽들은 전혀 관측되지 않았으며 이러한 사실들은 Zn가 증착온도를 높여줌에 따라 역스피넬의 사면체 자리에 치환되었음을 의미한다. M-H 곡선의 측정 결과 증착온도 $300^{\circ}C$ 박막은 자성 특성이 거의 관측되지 않은 반면 $500^{\circ}C$ 박막의 경우에는 매우 뚜렷한 강자성 특성을 확인할 수 있었으며 벌크보다 작은 포화자화 값은 팔면체 자리의 Fe 스핀들의 삐뚤림(canting)에 의한 것으로 이해된다.

Al3+와 Y3+ 동시치환 SnO2 투명전극 박막의 전기적 특성 (Electrical Properties of Al3+ and Y3+ Co-doped SnO2 Transparent Conducting Films)

  • 김근우;서용준;성창훈;박근영;조호제;허시내;구본흔
    • 한국전기전자재료학회논문지
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    • 제25권10호
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    • pp.805-810
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    • 2012
  • Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

Barrier층을 갖는 Soda lime glass 기판위에 증착된 ITO박막의 Annealing 조건에 따른 영향 (Effects of Annealing Condition on Properties of ITO Thin Films Deposited on Soda Lime Glass having Barrier Layers)

  • 이정민;최병현;지미정;박정호;주병권
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.66-66
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    • 2008
  • Most of the properties of ITO films depend on their substrate nature, deposition techniques and ITO film composition. For the display panel application, it is normally deposited on the glass substrate which has high strain point (>575 degree) and must be deposited at a temperature higher than $250^{\circ}C$ and then annealed at a temperature higher than $300^{\circ}C$ in order to high optical transmittance in the visible region, low reactivity and chemical duration. But the high strain point glass (HSPG) used as FPDs is blocking popularization of large sizes FPDs because it is more expensive than a soda lime glass (SLG). If the SLG could be used as substrate for FPDs, then diffusion of Na ion from the substrate occurs into the ITO films during annealing or heat treatment on manufacturing process and it affects the properties. Therefore proper care should be followed to minimize Na ion diffusion. In this study, we investigate the electrical, optical and structural properties of ITO films deposited on the SLG and the Asahi glass(PD200) substrate by rf magnetron sputtering using a ceramic target ($In_2O_3:SnO_2$, 90:10wt.%). These films were annealed in $N_2$ and air atmosphere at $400^{\circ}C$ for 20min, 1hr, and 2hrs. ITO films deposited on the SLG show a high electrical resistivity and structural defect as compared with those deposited on the PD200 due to the Na ion from the SLG on diffuse to the ITO film by annealing. However these properties can be improved by introducing a barrier layer of $SiO_2$ or $Al_2O_3$ between ITO film and the SLG substrate. The characteristics of films were examined by the 4-point probe, FE-SEM, UV-VIS spectrometer, and X-ray diffraction. SIMS analysis confirmed that barrier layer inhibited Na ion diffusion from the SLG.

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R-면 사파이어 기판 위에 제작된 계단형 모서리 조셉슨 접합의 특성 (Fabrication and Characterization of Step-Edge Josephson Junctions on R-plane Al$_2O_3$ Substrates)

  • 임해용;김인선;김동호;박용기;박종철
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.147-151
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    • 1999
  • YBCO step-edge Josephson junction were fabricated on sapphire substrates. The steps were formed on R-plane sapphire substrates by using Ar ion milling with PR masks. The step angle was controlled in the wide range from 25$^{\circ}$ to 50$^{\circ}$ by adjusting both the Ar ion incident angle and the photoresist mask rotation angle relative to the incident Ar ion beam. CeO$_2$ buffer layer and in-situ YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films was deposited on the stepped R-plane sapphire substrates by pulsed laser deposition method. The YBCO film thickness was varied to obtain the ratio of film thickness to step height in the range from 0.5 to 1. The step edge junction exhibited RSJ-like behaviors with I$_cR_n$ product of 100 ${\sim}$ 300 ${\mu}$V, critical current density of 10$^3$ ${\sim}$ 10$^5$ A/ cm$^2$ at 77 K.

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PEDOT-PSS/NPD-$C_{60}$ 정공 주입/수송 층이 도입된 유기발광소자의 성능 향상 연구 (Enhanced Efficiency of Organic Electroluminescence Diode Using PEDOT-PSS/NPD-$C_{60}$ Hole Injection/Transport Layers)

  • 박경남;강학수;나타라잔 센틸루마르;박대원;최영선
    • 폴리머
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    • 제33권5호
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    • pp.407-412
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    • 2009
  • 유기발광소자(OLED)에서 정공 수송층(hole injection layer, HIL)으로 사용되는 N,N'-di-1-naphthyl-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPD)가 정공 주입층(hole injection layer HIL)으로 사용된 PEDOT-PSS 층 위로 진공 증착되었다. PEDOT-PSS 층은 ITO 유리 위에 스핀 코팅되어 제조되었다. 또한, NPD와 $C_{60}$의 공증착에 의해 $C_{60}$이 약 10 wt% 도핑된 NPD-$C_{60}$ 층을 제조하였으며, AFM과 XRD를 이용하여 NPD-$C_{60}$ 박막의 모폴로지 특성을 관찰하였다. 다층 소자를 제조하여 J-Y, L-V 및 전류 효율 특성이 고찰되었다. $C_{60}$박막은 국부적인 결정성 구조를 가지고 있으나, NPD-$C_{60}$ 박막에서는 $C_{60}$ 분자가 균일하게 분산되어 $C_{60}$의 결정성 구조가 확인되지 않았다. 또한, $C_{60}$의 도핑에 의해서 박막의 표면이 균일해지는 것을 확인하였으며, 박막 내의 전류 밀도가 증가됨을 확인하였다. NPD-$C_{60}$ 박막을 이용하여 ITO/PEDOT-PSS/NPD-$C_{60}/Alq_3$/LiF/Al 다층 소자를 제조하였을 때, 소자의 휘도 측면에서 약 80% 향상 효과가 있었으며, 소자 효율 측면에서도 약 25%의 향상을 기대할 수 있었다.

탄소계 경질 박막의 연구 및 산업 적용 동향 (Trend in Research and Application of Hard Carbon-based Thin Films)

  • 이경황;박종원;양지훈;정재인
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2009년도 춘계학술대회 논문집
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    • pp.111-112
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    • 2009
  • Diamond-like carbon (DLC) is a convenient term to indicate the compositions of the various forms of amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C), hydrogenated amorphous carbon and tetrahedral amorphous carbon (a-C:H and ta-C:H). The a-C film with disordered graphitic ordering, such as soot, chars, glassy carbon, and evaporated a-C, is shown in the lower left hand corner. If the fraction of sp3 bonding reaches a high degree, such an a-C is denoted as tetrahedral amorphous carbon (ta-C), in order to distinguish it from sp2 a-C [2]. Two hydrocarbon polymers, that is, polyethylene (CH2)n and polyacetylene (CH)n, define the limits of the triangle in the right hand corner beyond which interconnecting C-C networks do not form, and only strait-chain molecules are formed. The DLC films, i.e. a-C, ta-C, a-C:H and ta-C:H, have some extreme properties similar to diamond, such as hardness, elastic modulus and chemical inertness. These films are great advantages for many applications. One of the most important applications of the carbon-based films is the coating for magnetic hard disk recording. The second successful application is wear protective and antireflective films for IR windows. The third application is wear protection of bearings and sliding friction parts. The fourth is precision gages for the automotive industry. Recently, exciting ongoing study [1] tries to deposit a carbon-based protective film on engine parts (e.g. engine cylinders and pistons) taking into account not only low friction and wear, but also self lubricating properties. Reduction of the oil consumption is expected. Currently, for an additional application field, the carbon-based films are extensively studied as excellent candidates for biocompatible films on biomedical implants. The carbon-based films consist of carbon, hydrogen and nitrogen, which are biologically harmless as well as the main elements of human body. Some in vitro and limited in vivo studies on the biological effects of carbon-based films have been studied [$2{\sim}5$].The carbon-based films have great potentials in many fields. However, a few technological issues for carbon-based film are still needed to be studied to improve the applicability. Aisenberg and Chabot [3] firstly prepared an amorphous carbon film on substrates remained at room temperature using a beam of carbon ions produced using argon plasma. Spencer et al. [4] had subsequently developed this field. Many deposition techniques for DLC films have been developed to increase the fraction of sp3 bonding in the films. The a-C films have been prepared by a variety of deposition methods such as ion plating, DC or RF sputtering, RF or DC plasma enhanced chemical vapor deposition (PECVD), electron cyclotron resonance chemical vapor deposition (ECR-CVD), ion implantation, ablation, pulsed laser deposition and cathodic arc deposition, from a variety of carbon target or gaseous sources materials [5]. Sputtering is the most common deposition method for a-C film. Deposited films by these plasma methods, such as plasma enhanced chemical vapor deposition (PECVD) [6], are ranged into the interior of the triangle. Application fields of DLC films investigated from papers. Many papers purposed to apply for tribology due to the carbon-based films of low friction and wear resistance. Figure 1 shows the percentage of DLC research interest for application field. The biggest portion is tribology field. It is occupied 57%. Second, biomedical field hold 14%. Nowadays, biomedical field is took notice in many countries and significantly increased the research papers. DLC films actually applied to many industries in 2005 as shown figure 2. The most applied fields are mold and machinery industries. It took over 50%. The automobile industry is more and more increase application parts. In the near future, automobile industry is expected a big market for DLC coating. Figure 1 Research interests of carbon-based filmsFigure 2 Demand ratio of DLC coating for industry in 2005. In this presentation, I will introduce a trend of carbon-based coating research and applications.

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TiN 박막을 이용한 2층 무반사 코팅의 설계 및 층착 (Design and deposition of two-layer antireflection and antistatic coatings using a TiN thin film)

  • 황보창권
    • 한국광학회지
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    • 제11권5호
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    • pp.323-329
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    • 2000
  • [공기 $ISiO_2ITiNI$ 유리]설계의 반사율이 가시광선 영역에서 0이 되는 TiN의 이상적인 복소수 굴절률을 계산하였다. TiN과 $SiO_2$의 각 층의 두께 변화에 따른 2층 무반사 코팅의 반사율을 전사모의하였으며, 그 결과 TiN의 두께를 조절함으로써 최저 반사율 영역의 폭과 반사율을 변화시킬 수 있었고, $SiO_2$층의 두께를 조절함으로써 반사율이 최저가 되는 중심을 이동시킬 수 있었다. RF 마크네트론 스퍼터링 방법으로 증착한 TiN 박막의 화학적, 구조적, 전기적 특성은 각각 Rutherford backscattering spectroscopy (RBS), atomic force microscope(AFM), 4점 탐침 측정기를 이용하였다. 또한 TiN 박막과 2층 무반사 코팅의 광학적 특성은 분광광도계와 variable angle spectroscopic ellipsometer(VASE)를 이용하여 조사하였다. AFM 측정 결과 TiN 박막의 rms 거칠기는 $9~10\AA$으로 비교적 박막의 표면은 균일하고, 높은 기판온도에서 증착한 TiN 박막의 비저항은 4점 탐침측정 결과 $360~730\mu$\Omega $ cm로 매우 낮으며, RBS측정 결과 Ti:O:N=1:0.65:0.95 비율로 산소가 포함되어 있음을 알았다. 이러한 TiN 박막의 특성과 전산모의 바탕으로 증착한 TiN층을 이용한 2층 무반사 무정전 코팅[공기 $ISiO_2ITiNI$ 유리]의 반사율은 440~650 nm영역에서 0.5% 미만이었다.

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2-TNATA:C60 정공 주입층을 이용한 유기발광다이오드의 성능 향상 연구 (Enhanced Efficiency of Organic Electroluminescence Diode Using 2-TNATA:C60 Hole Injection Layer)

  • 박소현;강도순;박대원;최영선
    • 폴리머
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    • 제32권4호
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    • pp.372-376
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    • 2008
  • 유기발광소자(OLED)에서 정공 주입층으로 사용되는 4,4',4"-tris(N-(2-naphthyl)-N-phenylamino)-triphenylamine(2-TNATA)가 전극으로 사용되는 ITO(indium tin oxide)와 홀 수송층(hole transport layer, HTL)사이에 박막으로 진공 증착되었다. 공증착에 의해 C60이 약 20 wt% 도핑된 2-TNATA:C60 층을 제조하였으며, AFM과 XRD를 이용하여 2-TNATA:C60 박막의 분자 배향성 및 토폴로지를 관찰하였다. 또한, 다층 소자의 J-V, L-V 및 전류 효율 특성이 고찰되었다. C60은 분자 배향성을 가지고 있으나, 2-TNATA:C60 박막은 C60 분자의 균일한 분산에 의해 분자 배향성이 확인되지 않았다. C60의 도핑에 의해서 2-TNATA 박막이 더욱 조밀해지고 균일해지는 것을 확인하였으며, 이로 인하며 박막 내의 전류 밀도가 증가됨을 확인하였다. 2-TNATA:C60 하이브리드 박막을 이용하여 ITO/2-TNATA:C60/NPD/$Alq_3$/LiF/Al 다층 소자를 제조하였을 때 소자의 휘도가 향상되었으며 소자 효율도 약 4.7에서 약 6.7 cd/A로 증가하였다.

PMMA 유기 게이트 절연막의 농도와 두께에 따른 특성 (Properties of Organic PMMA Gate Insulator Film at Various Concentration and Film Thickness)

  • 유병철;공수철;신익섭;신상배;이학민;박형호;전형탁;장영철;장호정
    • 반도체디스플레이기술학회지
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    • 제6권4호
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    • pp.69-73
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    • 2007
  • The MIM(metal-insulator-metal) capacitors with the Al/PMMA/ITO/Glass structures were manufactured according to various PMMA concentration of 1, 2, 4, 6, 8 wt%. The lowest leakage current and the largest capacitance were found to be 2.3 pA and 1.2 nF, respectively, for the device with 2 wt% PMMA concentration. The measured capacitance of the devices was almost same values with the calculated one. The optimum film thickness was obtained at the value of 48 nm, showing that the capacitance and leakage current were 1.92 nF, 0.3 pA at 2 wt%, respectively. From this experiment, the PMMA gate insulator films can be applicable to the organic thin film transistors.

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온도가 W /Ta$_2$O$_5$ 5/ Si 구조의 전기적 특성에 미치는 영향 (The temperature effect on the electrical properties of W /Ta$_2$O$_5$/ Si structures)

  • 장영돈;박인철;김홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.71-74
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    • 1996
  • Ta$_2$O$_{5}$ film ale recognized as promising capacitor dielectric for future DRAM\`s. The electrical properties of Ta$_2$O$_{5}$films greatly depend on the heating condition. In the practical fabrication process, several annealing process, such as the annealing of Al in H$_2$(about 40$0^{\circ}C$) and reflow of BPSG (borophosphosilicate glass) film in $N_2$(about 80$0^{\circ}C$), exist after deposition of Ta$_2$O$_{5}$ film. In this paper, we describe the temperature effect on the electrical properties of W/Ta$_2$O$_{5}$/Si structure. The thin film of Ta$_2$O$_{5}$ and tungsten have been deposited on p-si(100) wafer using the sputtering system. The heating temperature was varied from 500 to 90$0^{\circ}C$ in $N_2$for 30min and The degree of temperature is 100\`C. In a log(J/E$^2$) Vs 1/E plot of typical I-V data, we find a linear relationship for the temperature of 500, $600^{\circ}C$ and as deposition. This could indicate Fowler-Nordheim tunneling as the dominant mode of current transports. However, we can not find a linear relationship for the temperature above $700^{\circ}C$. This could not indicate Fowler-Nordheim tunneling as the dominant mode of current transport. The high frequency (1MHz) capacitance-voltage (C-V) of W/Ta$_2$O$_{5}$/Si Capacitor were investigated on the basis of shift in the threshold voltage and dielectric constant. The magnitude of the threshold voltage and dielectric constant depends on the heating temperature, and increases with heating temperature.temperature.

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