• The Korean Journal of Ceramics
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• 제1권1호
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• pp.21-28
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• 1995

Electrical conductivity of $TiO_2$ thin films, deposited on $Al_2O_3$ substrates by metal organic chemical vapor deposition (MOCVD), was measured by four-point probe method in a temperature range from $800^{\circ}C$ to $1025^{\circ}C$ and an oxygen partial pressure range from $2.7{\times}10^{-5}$ atm to 1 atm. In the low oxygen partial pressure region n-type conduction was dominant, but in the high oxygen partial pressure region p-type conduction behavior appeared due to substitution of Ti ions by Al ions, which were diffused from the substrate during post deposition annealing process. Electrical conductivity of the film decreases in the n-type region and increases in the p-type region as the oxygen partial pressure increases. The transition points, which show the minimum conductivity, shifted to the higher oxygen partial pressure region as the measuring temperature increased, but it shifted to lower oxygen partial pressure region with an increase in the post annealing temperature. The results were also discussed with the possible defect models.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.575-579
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• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

• 한국재료학회지
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• 제10권9호
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• pp.624-628
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• 2000

표면 탄성과 디바이스의 전극재료로 사용되는 Al-%Cu(4000$\AA$)/tungsten nitride 박막을 magnetron sputtering 법으로 제조하고 전기저항을 평가한 비정질상의 tungsten nitride 박막을 제조할 수 있었고, 비정질 형성을 위해 질소비(R =$N_2$/(Ar+$N_2$)가 10~40% 정도 필요하다. Tungsten nitride 박막의 잔류응력은 비정질이 형성되면서 급격히 감소되었다. 이러한 비정질 박막위에 Al-1%Cu 합금막이 형성되었다. 다층막은 453K에서 4시간 동안 열처리함으로써 $3.6{\mu}{\Omega}-cm$의 저항을 나타냈는데, 이는 박막내 결정립 성장과 결함의 감소에 기인하였다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.667-667
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• 2006

• 전자공학회논문지A
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• 제29A권10호
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• pp.35-41
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• 1992

Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50$\AA$ after nitridation for 1min at microwave power of 1000W, RF power of 500W, and NS12T pressure of ${\times}10^{-3}$ torr. 50$\AA$ fo nitride film was grown within 1 min and no appreciable growth occured thereafter. Dielectric breakdown strength and leakage current density in Al/SiN/Si structure were measured to be about 7-11 MV/cm and ${\times}10^{-10}~5{\times}10^{-10}A/cm^{2}$, respectively. Observed linear relationship in 1n(J/E)-vs-E$^{1/2}$ and no polarity-dependence of the leakage current indicated that the Poole-Frenkel emission is mainly responsible for the conduction in this nitrided silicon films.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.214-215
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• 2002

High saturation magnetization (B$\_$s/) and excellent high frequency characteristics of magnetic thin films has been recognized as the most important requirement for further miniaturization and higher frequency operation in magnetic devices, such as magnetic heads and magnetic sensors. Up to now, Fe-X-N (X =Ti, Hf, and Al etc.) films with B$\_$s/ of 15 ∼ 19 kG and coercivity (H$\_$c/) of 0.5 ∼ 5.0 Oe have been successfully fabricated and proven to satisfy various requirements as a potential candidate for thin film head materials. (omitted)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.153-153
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• 1999