Electrical properties of $Al_2O_3$ /GaN MIS capacitor deposited by Remote Plasma ALD
(Remote Plasma ALD법으로 제작한 $Al_2O_3$ /GaN MIS 커패시터의 전기적 특성)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2008.11a
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- pp.13-14
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- 2008