• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.136-136
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• 2003

In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

• 한국결정성장학회지
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• 제22권1호
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• pp.1-4
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• 2012

O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/$Al_2O_3$ substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.

• 한국재료학회지
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• 제21권10호
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• pp.573-579
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• 2011

Highly textured Ag, Al and Al:Si back reflectors for flexible n-i-p silicon thin-film solar cells were prepared on 100-${\mu}m$-thick stainless steel substrates by DC magnetron sputtering and the influence of their surface textures on the light-scattering properties were investigated. The surface texture of the metal back reflectors was influenced by the increased grain size and by the bimodal distribution that arose due to the abnormal grain growth at elevated deposition temperatures. This can be explained by the structure zone model (SZM). With an increase in the deposition temperatures from room temperature to $500^{\circ}C$, the surface roughness of the Al:Si films increased from 11 nm to 95 nm, whereas that of the pure Ag films increased from 6 nm to 47 nm at the same deposition temperature. Although Al:Si back reflectors with larger surface feature dimensions than pure Ag can be fabricated at lower deposition temperatures due to the lower melting point and the Si impurity drag effect, they show poor total and diffuse reflectance, resulting from the low reflectivity and reflection loss on the textured surface. For a further improvement of the light-trapping efficiency in solar cells, a new type of back reflector consisting of Ag/Al:Si bilayer is suggested. The surface morphology and reflectance of this reflector are closely dependent on the Al:Si bottom layer and the Ag top layer. The relationship between the surface topography and the light-scattering properties of the bilayer back reflectors is also reported in this paper.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.49.2-49.2
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• 2009

투명전극은 디스플레이, 태양전지와 같은 광전자 소자에 필수적이며, 지금까지 개발된 재료 중에는 ITO가 가장 투명하면서 전기전도도가 높고 생산성도 좋기 때문에 투명전극의 재료로 사용하고 있다. ITO는 낮은 비저항(${\sim}10^{-4}{\Omega}cm$) 과 높은 투과율 (~85 %), 상대적으로 넓은 밴드갭 에너지 (3.5 eV) 의특성과 같이 뛰어난 전기적 광학적 특성에 반해서 높은 원자재 가격, 불안정한 공급량 등으로 인한 문제점이꾸준히 제기되고 있다. 따라서 $In_2O_3$:Sn, ZnO:Al, ZnO:Ga, ZnO:F, ZnO:B, TiN 등과 같은 물질들로대체하려는 연구가 활발하게 진행되고 있다. ZnO는 ITO보다원자재의 수급이 원활하기 때문에 원가가 낮으며, 상대적으로 낮은 온도에서도 제작이 가능하다. 또한 화학적으로 안정적이므로 ZnO에 Al, Ga 등의 3족 원소를 도핑함으로써 낮은 비저항의 박막 제작이 가능하고, ITO 박막과 비교하여 etching이 쉬우며 기판과의 접착성이 좋으며, sputtering 공정시 plasma 분위기에서의 안정성이 뛰어나고 박막증착율이 높기 때문에 투명전극으로 적합한 재료이다. 본 연구에서는 cylindrical type의 Aldoping된 ZnO single target을 사용하여 박막 증착 압력의 변화를 주어 유리기판 위에 DC sputtering을 하였다. Fieldemission scanning electron microscope (FESEM)을 통해 ZnO:Al 박막의 표면의 형상과 두께를 확인하였으며, X-ray diffraction (XRD) 분석을 통해 박막의 결정학적 특성을 관찰하였다. 투명전극용 물질로서 ZnO:Al 박막의 적합성 여부를 확인하기 위하여 Van der Pauw 방법을 이용하여 박막의 비저항, 전자 이동도, 캐리어 농도를 측정하였으며, 박막의 기계적 성질 및 표면 접착성을 확인하기 위하여 nano-indentaion 분석을 하였다. 또한 UV-vis spectrophotometer를 이용하여 ZnO:Al 박막의 투과율을 분석하여 투명전극으로의 응용 가능성을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.53-60
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• 2014

Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.

• 한국포장학회지
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• 제5권1호
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• pp.30-36
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• 1999

1. 슬라이스 치즈용 복합필름의 두께는 일부 단체필름의 두께를 알수없어 총 두께로 나타냈음을 전제로 한다. K/PET 필름은 종횡 $9{\sim}20kg/mm^2$ 범위로, 일반 범용플라스틱 필름(PE, PP등)과 비교해보면 강도가 우수하다. 또 겉 포장용의 경우 $61.6{\mu}PVDC/PE/Al-vac/CPS,\;96.9{\mu}PE/PVDC/PE,\;79.3{\mu}PET/PVDC/L-LDPE,\;72.2{\mu}PET/PVDC/PE/Al-vac/PE$ 복합필름도 종횡 $4{\sim}10kg/15mm$범위로 외부로부터 보호하는데 매우 우수하다. 2. 치즈의 투습도에서 $40{\mu}PVDC$나 $15{\mu}K/PET$필름은 대략 $10g/m^2/24hr$정도로 습기 차단성이 일반 범용플라스틱 필름과 비교해보면 매우 우수하다. 또 겉포장용 복합필름으로 $61.6{\mu}PVOC/PE/Al-vac/CSP{\cdot}4.91<96.9{\mu}PE/PVDC/PE$ 와 $79.3{\mu}PET/PVDC/L-LDPE$ 약 $3.8<72.2{\mu}PET/PVDC/PE/Al-vac/PE\;0.41g/m^2{\cdot}24hr$로서 모두 차단성이 우수 하지만 특히 $72.2{\mu}PET/PVDC/PE/Al-vac/PE$ 필름이 가장 우수하므로 장기저장시 사용이 좋을 것으로 사료된다. 3. 치즈의 기체투과도에서 1) 산소투과도는 PVDC 필름은 $130cc/m^2{\cdot}24hr{\cdot}atm$로 K/PET 필름의 $19.9cc/m^2{\cdot}24hr{\cdot}atm$에 비해 약 6.5배로 가급적 K/PET필름의 사용이 요망된다. 그리고 겉포장용으로 $61.6{\mu}PVDC/PE/Al-vac/CPS\;25.3>96.9{\mu}PE/PVDC/PE\;15.3>79.3{\mu}PET/PVDC/L-LDPE\;13.4>72.2{\mu}PET/PVDC/Al-vac/PE\;1.81cc/m^2.24hr{\cdot}atm$ 복합필름에서 PET/PVDC/Al-vac/PE필름은 장기저장시 사용이 좋을 것으로 사료된다. 2) 질소가스 및 탄산가스투과도 각각 $61.6{\mu}PVDC/PE/Al-vac/CPS\;12.5,\;59.8>96.9{\mu}PE/PVDC/PE\;7.1,\;42.0>79.3{\mu}ET/PVDC/L-LDPE\;6.4,\;34.2>72.2{\mu}PET/PVDC/PE/Al-vac/PE\;0.74,\;4.2cc/m^2.24hr{\cdot}atm$으로 가장 우수한 PET/PVDC/PE/Al-vac/PE 복합필름이 장기저장용으로 이용이 좋을 것으로 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.171-171
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• 2012

We have studied the effects of plasma treatments on CdS buffer layers in CIGS thin film solar cells. The CdS layers were deposited on CIGS films by chemical bath deposition (CBD) method. The RF plasma treatments of the CdS thin films were performed with Ar, $O_2 and $N_2 gases, respectively. After plasma treatments, the solar cells with Al:ZnO/i-ZnO/CdS/CIGS structures were fabricated. The surface properties of the CdS/CIGS thin films after plasma treatments were investigated with SEM, EDX and AFM measurements. The electrical properties of manufactured solar cell were discussed with the results of current-voltage measurements. The plasma treatments have a strong influence on the open circuit voltage (VOC) and the fill factor of the solar cells. Finally, a correlation between the surface properties of CdS layer and the efficiencies of the CIGS thin film solar cells is discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.86-89
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al and Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Au; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• 한국초전도ㆍ저온공학회논문지
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• 제15권2호
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• pp.9-11
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• 2013

We have investigated the effect of thickness of the MgB2 film on the grain growth direction as well as on their superconducting properties. $MgB_2$ films of various thicknesses were fabricated on c-cut $Al_2O_3$ substrates at a temperature of $540^{\circ}C$ by using hybrid physical-chemical vapor deposition (HPCVD) technique. The superconducting transition temperature ($T_c$) was found to increase with increase in the thickness of the $MgB_2$ film. X-ray diffraction analysis revealed that the orientation of grains changed from c-axis to a-axis upon increasing the thickness of the $MgB_2$ film from 0.6 to 2.0 ${\mu}m$. $MgB_2$ grains of various orientations were observed in the microstructures of the films examined by scanning electron microscopy. It is observed that at high magnetic fields the 2.0-${\mu}m$-thick film exhibit considerably larger critical current density ($J_c$) as compared to 0.6-${\mu}m$-thick film. The results are discussed in terms of an intrinsic-pinning in $MgB_2$ similarly as intrinsic-pinning occurring in high-Tc cuprate superconductors with layered structure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1696-1698
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• 2000

We give pressure stimulation into long chain fatty acid of LB thin films then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from 0[V] to +1.5[V] and the capacitor. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller.