• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.201-209
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• 1989

Fine Si-Al-OH coprecipitate powders were prepared from Si- and Al-alkoxides by the hydrolysis method. $\beta$-Sialon powder was obtained from prepared Si-Al-OH coprecipitate by the simultaneous reduction and nitridation method. The syntehsized Sialon powder was pressureless sintered at 175$0^{\circ}C$ for 90 min in N2 atmosphere. The characterization of the Sialon powder was performed with XRD, BET, SEM, TEM and particle size analysis. The sinterability and mechanical properties of sintered bodies were investigated in terms of relative density, M.O.R., fracture toughness, hardness and the morphology of microstructure. The highest values of their mechanical properties were obtained for the $\beta$-Sialon ceramics at Z=1 and those values are as follows : M.O.R., KIC and HV of $\beta$-Sialon ceramics(Z=1) are 499.1 MPa, 5.9MN/m3/2 and 18.7GPa, respectively.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.4
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• pp.164-168
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• 2017

Intense electron beam was irradiated on the CrAlN thin films deposited in SKD61 under different incident energies and then the effect of electron beam irradiation on the enhancement of surface hardness and wear resistance was investigated. Surface hardness and wear resistance of the CrAlN films is increased proportionally with the electron beam energy. While the surface hardness of as deposited CrAlN film is Hv ($0.1g{\cdot}f$) 450, the hardness oflectron irradiated (600 eV) film is Hv ($0.1g{\cdot}f$) 2050. The width of wear track of the untreated SKD61 is $X\_{\mu}m$, while the track-width of the electron irradiated CrAlN (600 eV) film is $787{\mu}m$, respectively. From the observed results, it is supposed that the optimal electron beam irradiation can be one of the useful surface treatment technologies for the enhancement of surface hardness and wear resistance of CrAlN/SKD61, simultaneously.

• Journal of the Korean Ceramic Society
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• v.16 no.4
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• pp.206-212
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• 1979

The phase relations and microstructure appeared at 1700℃ in a system of Si3N4-Al2O3-SiO2 were studied. The samples were pressurelessly sintered at 1700℃ for 1hr and reheated at 1600℃ for 1hr under nitrogen atmosphere. The compounds formed were identified by X-ray diffraction method and the microstrues were observed by SEM. The stable phases appeared in this system were X-phase, Si2ON2, β'-Si3N4 and Mullite. From the results of those experiments, it was concluded that the X-phase has very close composition to that proposed by G, K. Layden, Si3Al6O12N2. SEM photographs showed that Si2ON2 was a plate phase and X-phase was a rectagular plate phase.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.364-366
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• 1995

We investigated the Electromigration characteristics in Cu alloyed Al line and the effect of Ti/TiN barrier layer on the characteristics. Test structures were fabricated by wafer level and 50% failure times were tested in the condition of j= 2 MA/$cm^3$, T= 300$^{\circ}C$. The reliability of Al line was improved which was 0.5%Cu Alloyed, but Ti/TiN under layer deteriorated the reliability while TiN over layer improved the characteristics.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.635-640
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• 2016

Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.654-658
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• 2009

For investigation of surface leakage currrent of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall, three kind of surface-leakage-test-patterns were fabricated. and we measured the surface leakage current of each patterns. In result of our work, the surface leakage current of pattern of which Schottky contact is formed on etched mesa wall is the largest. the leakage current through schottky contact on etched mesa wall is predominant in AlGaN/GaN heterostructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.980-986
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• 2001

Bragg reflector type FBAR was fabricated on the Si(100) substrate. We measured a frequency response of the resonator at 5.2 GHz and analyzed it by numerical calculation considering actual acoustic losses of each layer in the structure. We fabricated nine layer Bragg reflector of W-SiO$_2$pairs using r.f. sputtering method and fabricated AlN piezoelectric and Al electrodes using pulsed dc sputtering. The return loss(S$_{11}$) of the fabricated Bragg reflector type FBAR was 12 dB at 5.38 GHz and the series resonance frequency(f$_{s}$) was 5.376 GHz and the parallel resonance frequency(f$_{p}$) was 5.3865 GHz. Effective electro-mechanical coupling constant (K$_{eff{^2}}$) and Quality factors(Q$_{s}$), the Figures of Merit of the resonator, were about 0.48% and 411, respectively. We extracted acoustic parameters of AlN piezoelectric and reflection coefficient of the Bragg reflector by numerical calculation. We could know that material acoustic impedance and wave velocity of AlN piezoelectric decreased for intrinsic value and the electromechanical coupling constant(K$_2$) value was very low owing to the poor quality of the AlN piezoelectric. Reflection coefficient of Bragg reflector was 0.99966 and reflection band was very wide from 2.5 to 9.5 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.493-498
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• 2008

This Paper describes the Raman scattering characteristics of polycrystalline (Poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+$H_2$). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than ($C/Si\;{\approx}\;3$) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at $1180^{\circ}C$ on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.