• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• Laser Solutions
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• 제3권2호
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• pp.25-33
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• 2000

One of perspective direction of microfabrication is direct laser writing technology that allows to create metal, semiconductive and dielectric micropatterns on substrate surface. In this work, a two step method, the combination of seed forming process, in which metallic Al seed was selectively generated on AlN ceramic substrate by direct writing technique using a pulsed Nd : YAG laser and subsequent electroless Ni plating on the activated Al seed, was presented. The effects of laser parameters such as pulse energy, scanning speed and pulse frequency on shape of Alseed and conductor line after electroless Ni plating were investigated. The nature of the laser activated surface is analyzed from XPS data. The line width of this metallic Al and Ni is analyzed using SEM. As a results, Al seed line with 24㎛ width and 100㎛ isolated line space is obtained. Finally, laser direct writing can be applied in the field between thin and thick film technique in electronic industry.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제19권1호
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• pp.6-10
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• 2009

In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.

• Korean Journal of Metals and Materials
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• 제50권11호
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• pp.861-866
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• 2012

A dense nanostructured TiN-AlN composite was prepared from high-energy ball milled TiN-AlN mixture powders by pulsed current activated sintering (PCAS). A highly dense TiN-AlN bulk composite was obtained within 2 minutes at $1500^{\circ}C$ with the simultaneous application of 80 MPa pressure and pulsed current. The fine crystalline structure of the TiN-AlN mixture, which was obtained by high-energy milling, was effectively maintained during PCAS and resulted in the enhancement of the mechanical properties. The micro hardness and fracture toughness of TiN-AlN composite were $1780kg/mm^2$ and $5MPa.m^{1/2}$, respectively. The mechanical properties were higher than monolithic AlN or TiN.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제34권3호
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• pp.98-102
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• 2024

In this study, the crystal characteristics of commercial AlN powders with sizes of "㎛" and "nm" were selected through XRD analysis and then sintered at different temperatures through an induction heating furnace to investigate the optimized sintering temperature and physical properties. The sintering temperature was 1,500, 1,700, and 1,900℃ in the N₂ atmosphere, and the optimized sintering temperature conditions were established for the sintered AlN pellets using SEM, XRD, and Raman analysis. Additionally, impedance analysis was performed to confirm the electrical properties of the optimized AlN pellet without sintering additives.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.112-113
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• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제22권10호
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• pp.826-831
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• 2009

In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국정보통신학회 2012년도 춘계학술대회
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• pp.686-689
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• 2012

In this paper, the GaN-based LED characteristics are analyzed using ISE-TCAD. The LED consists of GaN barriers, active region of InGaN quantum well, AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power characteristics of LED considering Auger recombination rate, thickness of quantum well and number of quantum wells are analyzed and some criteria for the design of LED are proposed.

• Journal of the Korean Institute of Gas
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• 제20권2호
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• pp.1-9
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• 2016

Combined removal of n-heptane and carbon monoxide (CO) using a plasma-catalytic process was investigated. The performance of the plasma-catalytic process was compared with that of the catalyst-alone process to characterize the decomposition of n-heptane and CO with the operation parameters such as the type of catalyst, reaction temperature, and discharge power. From several sets of experiments, it was found that the decomposition efficiency of n-heptane mainly depended on the specific input energy rather than the reactor temperature, whereas the oxidation of CO on both the energy density and the reaction temperature. The results conducted over several metal oxide catalysts exhibited that the decomposition efficiency of n-heptane was in the order: $Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3{\approx}Ag/{\gamma}-Al_2O_3$. Especially, $Pd/{\gamma}-Al_2O_3$ catalyst did hardly generate CO as a byproduct during the decomposition of n-heptane under an appropriate condition, revealing $CO_2$ selectivity of nearly 100%. The CO oxidation efficiency was largely affected by the type of catalyst ($Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$). At temperatures below $180^{\circ}C$, the plasma-catalytic process was more effective in the oxidation of CO, while above $180^{\circ}C$, the catalytic process resulted in slightly higher CO oxidation efficiency.

• Korean Chemical Engineering Research
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• 제56권4호
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• pp.600-606
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• 2018

The influence of acidity in MTT zeolite of different Si/Al molar ratio's on the catalyst activity in methanol-to-olefin (MTO) reaction has been investigated. The Si/Al ratio was controlled with the Al content in the gel when N,N,N',N'-tetramethyl-1,3-diaminopropane was used as a structure directing agent (SDA). The gel composition was controlled to $20SiO_2$ : 30SDA : x (=0.25~1.25)$NaAlO_2$ : 2NaOH : $624H_2O$, which was subject to the hydrothermal synthesis at 433 K for 4 days. As the composition of sodium aluminate decreased, the particle size of MTT zeolite increased, and also the amount of acid sites decreased. To investigate the catalytic performance, MTO reaction was carried out at 673 K with $1.2h^{-1}$ WHSV. It was found that the H-MTT (1.00Al) catalyst with a Si/Al molar ratio of 24 maintained the methanol conversion over 90% for 900 min.