Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지
DOI QR코드

DOI QR Code

Study on the properties of aluminum nitride sintered using an induction furnace without sintering additives

소결조제 없이 유도가열로를 이용해 소결된 질화알루미늄의 특성 연구

  • Hyo Min Choi (Department of Materials Science and Engineering, Dankook University) ;
  • Kyung-Pil Yin (Ceracomb Co. Ltd.) ;
  • Jong-Won Yoon (Department of Materials Science and Engineering, Dankook University)
  • 최효민 (단국대학교 신소재공학과) ;
  • 인경필 ((주)세라컴) ;
  • 윤종원 (단국대학교 신소재공학과)
  • Received : 2024.06.11
  • Accepted : 2024.06.18
  • Published : 2024.06.30
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, the crystal characteristics of commercial AlN powders with sizes of "㎛" and "nm" were selected through XRD analysis and then sintered at different temperatures through an induction heating furnace to investigate the optimized sintering temperature and physical properties. The sintering temperature was 1,500, 1,700, and 1,900℃ in the N2 atmosphere, and the optimized sintering temperature conditions were established for the sintered AlN pellets using SEM, XRD, and Raman analysis. Additionally, impedance analysis was performed to confirm the electrical properties of the optimized AlN pellet without sintering additives.

본 연구에서는 ㎛ 및 nm 크기를 갖는 상용 AlN 분말을 XRD 분석을 통해 선별 후, 유도가열로를 활용하여 상이한 온도에서 소결하여 최적화된 소결 온도 및 물성 특성을 조사하였다. 소결 온도는 1,500, 1,700 그리고 1,900℃ N2 분위기에서 진행되었으며, 소결된 AlN 펠렛은 SEM, XRD, Raman 분석을 이용하여 최적화된 소결 온도 조건을 확립하였다. 또한 Impedance 분석을 진행하여 소결 조제 없이 제작된 AlN 펠렛의 전기적 특성을 확인하였다.

Keywords

Acknowledgement

이 연구는 2024년도 산업통상자원부 및 산업기술평가관리원(KEIT) 연구비 지원에 의한 연구임(과제번호: 20018017).

References

  1. G.A. Slack, "Nonmetallic crystals with high thermal conductivity", J. Phys. Chem. Solids 34 (1973) 321. 
  2. L.M. Sheppard, "Aluminum nitride: a versatile but challenging material", Am. Ceram. Soc. Bull. 69 (1990) 1801. 
  3. J.F. Daviet, I. Peccoud and F. Mondon, "Electrostatic clamping applied to semiconductor plasma processing I. theoretical modeling", J. Electrochem. Soc. 140 (1993) 3245. 
  4. Y. Baik and R.A. Drew, "Aluminum nitride: processing and applications", Key Eng. Mater. 122-124 (1996) 553. 
  5. K. Watari, H. J. Hwang, M. Toriyama and S. Kanzaki, "Effective sintering aids for low-temperature sintering of AlN ceramics", J. Mater. Res. 14 (1999) 1409. 
  6. A.V. Virkar, T.B. Jackson and R.A. Cutler, "Thermodynamic and kinetic effects of oxygen removal on the thermal conductivity of aluminum nitride", J. Am. Ceram. Soc. 72 (1989) 2031. 
  7. K. Komeya, H. Inoue and A. Tsuge, "Role of Y2O3 and SiO2 additions in sintering of AlN", J. Am. Ceram. Soc. 54 (1974) 411. 
  8. H.M. Lee, K. Bharathi and D.K. Kim, "Processing and characterization of aluminum nitride ceramics for high thermal conductivity", Adv. Eng. Mater. 16 (2014) 655. 
  9. P. Motamedi and K. Cadien, "XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition", Appl. Surf. Sci. 315 (2014) 104. 
  10. J.W. Lee, W.J. Lee and S.M. Lee, "Electrical behavior of aluminum nitride ceramics sintered with yttrium oxide and titanium oxide", J. Korean. Ceram. Soc. 53 (2016) 635.