• 센서학회지
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• 제12권2호
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• pp.66-71
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• 2003

Pt/AlGaN Schottky-type UV photodetectors were designed and fabricated. A low-temperature AlGaN interlayer buffer was grown between the AlGaN and GaN film in the diode structure epitaxy to obtain crack-free AlGaN active layers. A comparison was then made of the structural, electrical, and optical characteristics of two different diodes: one with an AlGaN($0.5\;{\mu}m$)/n+-GaN(2 nm) structure (type 1) and the other with an AlGaN($0.5\;{\mu}m$)/AlGaN interlayer($150\;{\AA}$)/n+-GaN($3\;{\mu}m$) structure(type 2). A crack-free AlGaN film was obtained by the insertion of a low-temperature AlGaN interlayer with an aluminum mole fraction of 26% into the $Al_xGa_{1-x}N$ layer. The fabricated Pt/$Al_{0.33}Ga_{0.67}N$ photodetector had a leakage current of 1 nA for the type 1 diode and $0.1\;{\mu}A$ for the type 2 diode at a reverse bias of -5 V. For the photoresponse measurement, the type 2 diode exhibited a cut-off wavelength of 300 nm, prominent responsivity of 0.15 A/W at 280 nm, and UV-visible extinction ratio of $1.5{\times}10^4$. Accordingly, the Pt/$Al_{0.33}Ga_{0.67}N$ Schottky-type ultraviolet photodetector with an AlGaN interlayer exhibited superior electrical and optical characteristics and improved UV detecting properties.

• 한국세라믹학회지
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• 제32권11호
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• pp.1308-1314
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• 1995

Changes in phase and microstructure were investigated in the SiC-AlN ceramics prepared by pressureless sintering using yttrium aluminum garnet (YAG) as a sintering aid at 200$0^{\circ}C$ and 210$0^{\circ}C$. The SiC/AlN ratio made a remarkable difference in densification, phase relations and the morphology of grains. In the AlN-rich composition, major phase was 2H and microstructure was composed of the densified equiaxed grains irrespective of the sintering temperatures. While those sintered at 200$0^{\circ}C$ were porous with major phase being 3C, the rod-like and the equiaxed grains were coexisted when sintered at 210$0^{\circ}C$ in the SiC-rich composition.

• 센서학회지
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• 제25권5호
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• pp.320-325
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• 2016

In this paper, we propose an AlGaN/GaN-based extended-gate metal-insulator-semiconductor high electron mobility transistor (MISHEMT)-type biosensor for detecting streptavidin-biotin complexes. We measure the drain current of the fabricated sensor, which varies depending on the antibody-antigen reaction of streptavidin with biotin molecules. To confirm the immobilization of biotin polyethylene glycol (PEG) thiol, we analyze the Au surface of a GaN sample using X-ray photoelectron spectroscopy (XPS). The proposed biosensor shows higher sensitivity than Si-based extended-gate metal oxide semiconductor field effect transistor (MOSFET)-type biosensor. In addition, the proposed AlGaN/GaN-based extended-gate MISHEMT-type biosensor exhibits better long-term stability, compared to the conventional AlGaN/GaN-based MISHEMT-type biosensor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.111-114
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• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• The Korean Journal of Ecology
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• 제15권2호
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• pp.157-172
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• 1992

Studies were conducted to evaluate the differential al tolerance of suwon 205 and olmil wheats grown is nutrient solution and determine the impact of NH4+-N or Ca2+ nutrition of the response of the two wheat vareties to al. In various concentrations of al, olmil induced lower ph levels than suwon 205 in nutrient solutions and the reduction of root length and dry weight was greater in olmil than in suwon 205. The uptake of al was greater in root than in shoot of the two wheat varieties, but more increased in root of olimil. also the uptake of ca, mg, k and p was inhibited by al especialy decrease of ca and p uptake in roots of olmil was more pronounced than in those of suwon 205. In nutrient solutions that contained NH4+-N plus 9ppm al, the ability of both varienties to raise the ph was reduced as the level of NH4+-N in nutrient solutions was increased, and al-sensitive olimil induced lower ph than did al-tolerant suwon 205. al toxicity was intensified by increasing the concentration of NH4+-N in nurient and toxic effect was greater in olmil. al toxicity in the two wheat varieties was steadily increased as the ca level of nutrient solution was reduced, sepecialy this effect was stronger in al-sensitive olmil than in al-tolerant suwon 205.

• 한국결정성장학회지
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• 제25권4호
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• pp.127-134
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• 2015

AlN 단결정은 넓은 밴드갭(6.2 eV), 높은 열 전도도($285W/m{\cdot}K$), 높은 비저항(${\geq}10^{14}{\Omega}{\cdot}cm$), 그리고 높은 기계적 강도와 같은 장점들 때문에 차세대 반도체 적용을 위한 많은 흥미를 끈다. 벌크 AlN 단결정 또는 박막 템플릿(template)들은 주로 PVT(Physical vapor transport)법, 플럭스(flux)법, 용액 성장(solution growth)법, 그리고 증기 액상 증착(HVPE)법에 의해 성장된다. 단결정이 성장하는 동안에 발생하는 결함들 때문에 상업적으로 어려움을 갖게 된 이후로 결함들 분석을 통한 결정 품질 향상은 필수적이다. 격자결함 밀도(EPD)분석은 AlN 표면에 입자간 방위차와 결함이 존재하고 있는 것을 보여준다. 투과전자현미경(TEM)과 전자후방산란회절(EBSD)분석은 전체적인 결정 퀄리티와 다양한 결함의 종류들을 연구하는데 사용된다. 투과전자현미경(TEM)관찰로 AlN의 형태가 적층 결함, 전위, 이차상 등에 의해 크게 영향을 받는 것을 알 수 있었다. 또한 전자후방산란회절(EBSD)분석은 전위의 생성을 유도하는 성장 결함으로서 AlN의 zinc blende 폴리모프(polymorph)가 존재하고 있는 것을 나타내고 있었다.

• 열처리공학회지
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• 제16권6호
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• pp.329-334
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• 2003

Microstructure and mechanical properties of $(Ti_{1-x}Alx)N$ films, Produced by the the Ion Beam Sputtering(IBS) method, were studied by changing the Ti, Al contents. The compositions of films determined by RBS were $(Ti_{0.75}Al_{0.25})N$, $(Ti_{0.61}Al_{0.39})N$ and $(Ti_{0.5}Al_{0.5})N$, and XPS binding energies of Ti2P, A12p and N1s shifted to higher energies than those of pure Ti, Al and N, which indicated that nitrides were formed. XRD results indicated that the NaCl structure for $$x{\leq_-}0.39$$ changed into amorphous structure at x=0.5. For films with $$x{\leq_-}0.39$$, the lattice parameter decreased in proportion to the Al content. Nanoindentation hardness value were above HV=3300 at Al content up to x=0.39. However, the hardness of films with x=0.5 abruptly decreased to HV=1800, and this lower hardness values were attributed to different crystal structure. Critical load(Lc) in scratch test showed 23N at x=0.25, 22N at x=0.39 and 22N at x=0.5, which indicated that films with different Al contents showed similar adhesion behavior.

• 한국세라믹학회지
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• 제35권7호
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• pp.685-690
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• 1998

Al2O3에 대한 용융 Al의 자발적 침윤 기구를 밝히기 위하여 순수한 Al 및 Al-(Si)-Mg 합금의 Al2O3에 대한 wet-ting angle과 침윤 특성을 진공, 아르곤, 그리고 질소분위기에서 관찰하였다. Al2O3에 대한 용융 Al 및 Al 합금의 wetting은 진공 분위기에서만 이루어졌으나, Al2O3에 대한 용융 Al 합금의 자발적 침윤은 질소 분위기하 Al 합금에 합금 원소로써 Mg가 함유되었을 때에 일어났다. Al2O3에 대한 용융 Al 및 Al 합금의 wettability와 자발적 침윤 특성의 차이는 Al2O3 표면에 형성되는 Mg-N화합물에 직접적인 영향을 받는 것으로 나타났다. Al2O3 입자 표면에 얇게 형성되는 Mg와 질소의 화합물 즉, Mg3N2가 Al2O3에 대한 용윤 Al 합금의 wettability를 향상시켜 $700^{\circ}C$의 온도에서도 Al 합금의 자발적 침윤이 가능하여 Al/Al2O3 복합재료를 무가압 상태에서 제조할 수 있었다.

• Tribology and Lubricants
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• 제26권1호
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• pp.68-72
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• 2010

A ceramic coating is a surface treatment method that is being used widely in the industrial field, recently. Ni-P plating is also being used widely because of its corrosion resistance and low cost. An anodizing method is applicable to aluminum alloy. An anodizing method generates a thick oxide layer on the surface and then, that heightens hardness and protects the surface. These surface treatments are applied to various mechanical components and treated surfaces relatively move one another. In this study, tribological characteristics of Ni-P plating and TiAlN coating on anodized Al alloy are compared. The counterpart, anodized Al alloy, is worn out abrasively by Ni-P plating and TiAlN coating that have higher hardness. Abrasively worn debris accumulated on the surfaces of Ni-P plating and TiAlN coating, and then transferred layer is formed. This transferred layer affects the amplitude of variation of friction coefficient, which is related to noise and vibration. The amplitude of variation of friction coefficient of Ni-P plating is lower than those of TiAlN coating during the tests.

• 한국세라믹학회지
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• 제33권4호
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• pp.455-463
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• 1996

Aluminium nitride (AlN) powder was prepared by using aluminium (III) complexes with dibasic carboxylate ligands(adipato)(hydroxo) aluminium(III) and (hydroxo)(succinato)aluminium (III) as a precursor. The AlN pow-der was obtained by calcining the complexes without mixing any carbon source under a flow of ammonia at 120$0^{\circ}C$ Contary to the conventional carbothermal reduction and nitridiation the process of decarboniza-tion of the residual carbon was not required because of the reaction of ammonia with carbon at temperature >100$0^{\circ}C$. Fine AlN powder was also prepared by calcining a mixture of an (adipato)(hydroxo)aluminium(III) complex and carbon under a flow of nitrogen at 140$0^{\circ}C$ The AlN powders prepared were ultrafine and their morphology was almost the same as that of powders of two precursors.