• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.302-302
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• 2012

본 연구에서는 아크 소스를 이용하여 TiAlN을 코팅하였으며 공정 변수 중 질소 유량에 다른 TiAlN 박막의 물성 변화를 관찰하였다. TiAlN은 고경도 난삭재의 고능률 절삭 분야에 사용되어 공구의 수명을 향상하기 위한 표면처리 소재로 각광을 받고 있다. TiAlN 박막은 아크 소스에 장착된 TiAlN 타겟(Ti-50 at %Al)을 사용하여 스테인리스 강판 위에 코팅 하였으며 이 때 기판과 타겟 간의 거리는 약 30 cm이었다. 기판을 진공용기에 장착하고 ${\sim}10^{-6}$ torr까지 진공배기를 실시한 후 아르곤 가스를 진공용기 내로 공급하여 공정 압력인 $7{\times}10^{-4}$ torr로 제어한다. 공정 압력에서 아크 소스에 약 70 A의 전류를 인가하여 아크를 발생시키고 기판 홀더에 약 -400 V의 직류전압을 인가하여 약 5분간 청정을 실시하였다. 기판의 청정이 끝나면 기판에 인가된 전압을 차단하고 질소 가스를 진공용기에 공급하여 TiAlN을 코팅하였다. 질소 유량이 30 sccm일 경우 TiAlN 박막의 경도가 약 2510 Hv로 가장 높았으며, 질소의 유량이 40 sccm 이상으로 증가할 경우 TiAlN 박막의 경도는 1500 Hv로 주목할 만한 변화는 없었다. 질소 유량이 증가하면 TiAlN 박막의 색상은 회색에서 어두운 보라색으로 변화하였고 주사전자현미경 분석을 통해서 거대 입자(macro particle)가 감소하는 경향을 확인할 수 있었으며 이는 질소 유량이 증가할수록 TiAlN 박막의 표면조도 또한 증가하는 분석결과와 일치하였다. X-선 회절 분석을 통해 질소 유량이 30 sccm 이상에서 박막의 질화가 일어나고 2500 Hv 이상의 경도를 가지는 최적 조건임을 확인하였으며, 이는 절삭 공구 등과 같이 고경도 유지를 위한 코팅 분야에 적용이 가능할 것으로 판단된다. 본 연구에서 얻어진 결과를 바탕으로 질소 유량 외에 다른 공정 조건을 변화시켜 TiAlN 코팅을 실시한다면 다양한 색상 구현, 고경도, 내마모성 등 TiAlN 박막의 기능성을 향상할 수 있을 것으로 예상된다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1294-1295
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• 2006

Various reactions and the in-situ formation of new phases can occur during the mechanical alloying process. In the present study, Al powders were strengthened by AlN, using the in-situ processing technique during mechanical alloying. Differential thermal analysis and X-ray diffraction studies were carried out in order to examine the formation behavior of AlN. It was found that the precursors of AlN were formed in the Al powders and transformed to AlN at temperatures above $600^{\circ}C$. The hot extrusion process was utilized to consolidate the composite powders. The microstructure of the extrusions was examined by SEM and TEM. In order to investigate the mechanical properties of the extrusions, compression tests and hardness measurements were carried out. It was found that the mechanical properties and the thermal stability of the Al/AlN composites were significantly greater than those of conventional Al matrix composites.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.230-237
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• 2021

In this study, the influence of silicon contents on the microstructure, mechanical and tribological properties of Ti-Al-Si-N coatings were systematically investigated for application of cutting tools. The composition of the Ti-Al-Si-N coatings were controlled by different combinations of TiAl₂ and Ti₄Si composite target powers using an arc ion plating technique in a reactive gas mixture of high purity Ar and N₂ during depositions. Ti-Al-Si-N films were nanocomposite consisting of nanosized (Ti,Al,Si)N crystallites embedded in an amorphous Si₃N₄/SiO₂ matrix. The instrumental analyses revealed that the synthesized Ti-Al-Si-N film with Si content of 5.63 at.% was a nanocomposites consisting of nano-sized crystallites (5-7 nm in dia.) and a three dimensional thin layer of amorphous Si₃N₄ phase. The hardness of the Ti-Al-Si-N coatings also exhibited the maximum hardness value of about 47 GPa at a silicon content of ~5.63 at.% due to the microstructural change to a nanocomposite as well as the solid-solution hardening. The coating has a low friction coefficient of 0.55 at room temperature against an Inconel alloy ball. These excellent mechanical and tribological properties of the Ti-Al-Si-N coatings could help to improve the performance of machining and cutting tool applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.161-166
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• 2013

AlN buffer layers have been used for the growth of GaN layers on Si substrates. However, the doping of high concentration of carriers into AlN layers is still not easy, therefore it may cause the increase of series resistance when it is used for the electrical or optical devices. In this work, to improve such a problem, the growth of GaN layers on Si substrates were performed using metal buffer layers instead of AlN buffer layer. We tried combinations of Ti, Al, Cr and Au as metal buffer layers for the growth of GaN on Si substrates. Surface morphology was measured by optical microscope and scanning electron microscope (SEM), and optical properties and crystalline quality were measured by photoluminescence (PL) and X-ray diffractometer (XRD), respectively. Electrical resistances for both cases of AlN and metal buffer layer were compared by current-voltage (I-V) measurement.

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.266-270
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• 2014

Aluminum nitride(AlN) films were grown on the C-face and on the Si-face of (0001) silicon carbide(SiC) substrates using plasma-assisted molecular-beam epitaxy(PA-MBE). This study was focused on first-stage growth manipulation prior to the start of AlN growth. Al pre-exposure, N-plasma pre-exposure, and simultaneous exposure(Al and N-plasma) procedures were used in the investigation. In addition, substrate polarity and, first-stage growth manipulation strongly affected the growth and properties of the AlN films. Al pre-exposure on the C-face and on the Si-face of SiC substrates prior to initiation of the AlN growth resulted in the formation of hexagonal hillocks on the surface. However, crack formation was observed on the C-face of SiC substrates without Al pre-exposure. X-ray rocking-curve measurements revealed that the AlN epilayers grown on the Si-face of the SiC showed relatively lower tilt and twist mosaic than did the epilayers grown on the C-face of the SiC. The results from the investigations reported in this paper indicate that the growth conditions on the Si-face of the SiC without Al pre-exposure was highly preferred to obtain the overall high-quality AlN epilayers formed using PA-MBE.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.50-58
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• 2002

The growth of GaN films on Si substrate has many advantages in that Si is less expensive than sapphire substrate and that integration of GaN-based devices with Si substrate is easier The difference of lattice constant and thermal expansion coefficient between GaN and Si is larger than those between GaN and sapphire. However, which results in many defects into the grown GaN. In order to obtain high duality GaN films on Si substrate, we need to reduce defects using the buffer layer such as AlN. In this study, we prepared three types of AlN buffer layer with various crystallinity on Si (111) substrate using MOCVD, Sputtering and MOMBE methods. GaN was grown by MOCVD on three types of AlN/Si substrate. Using TEM and XRD, we carried out comparative investigation of growth and properties of GaN deposited on the various AlN buffers by characterizing lattice coherency, crystallinity, growth orientation and defects formed (voids, stacking faults, dislocations, etc). It is found that the crystallinity of AlN buffer layer has strong effects on growth of GaN. The AlN buffer layers grown by MOCVD and MOMBE showed the reduction of out-of-plane misorientation of GaN at the initial growth stage.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.579-585
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• 2019

In this study, we investigate the effect of Al/N source ratios and growth rates on the growth and structural properties of AlN films on c-plane sapphires by plasma-assisted molecular beam epitaxy. Both growth rates and Al/N ratios affect crystal qualities of AlN films. The full width at half maximum (FWHM) values of ($10{\bar{1}}5$) X-ray rocking curves (XRCs) change from 0.22 to $0.31^{\circ}$ with changing of the Al/N ratios, but the curves of (0002) XRCs change from 0.04 to $0.45^{\circ}$ with changing of the Al/N ratios. This means that structural deformation due to dislocations is slightly affected by the Al/N ratio in the ($10{\bar{1}}5$) XRCs but affected strongly for the (0002) XRCs. From the viewpoint of growth rate, the AlN films with high growth rate (HGR) show better crystal quality than the low growth rate (LGR) films overall, as shown by the FWHM values of the (0002) and ($10{\bar{1}}5$) XRCs. Based on cross-sectional transmission electron microscope observation, the HGR sample with an Al/N ratio of 3.1 shows more edge dislocations than there are screw and mixed dislocations in the LGR sample with Al/N ratio of 3.5.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.3
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• pp.199-205
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• 1999

The quaternary Ti-Al-V-N films have been grown on glass substrates by reactive dc and rf magnetron sputter deposition from a Ti-6Al-4V target in mixed Ar-$N_2$ discharges. The Ti-Al-V-N films were investigated by means of X-ray diffraction(XRD), electron probe microanalysis(EPMA) and scratch tester. Both XRD and EPMA results indicated that the Ti-Al-V-N films were of single B1 NaCl phase having columnar structure with the (111) preferred orientation. Scratch tester results showed that the adhesion strength of Ti-Al-V-N films which treated with substrate heating and vacuum annealing was superior to that of as-deposited film. The good adhesion strength was also achieved in the double-layer structure of Ti-Al-V-N/Ti-Al-V/Glass.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.6
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• pp.1-6
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• 2010

We present simulation results on DC characteristics of AlGaN/GaN HEMT having stair-type gate electrodes, in comparison with those of the conventional single gate AlGaN/GaN HEMTs and field-plate enhanced AlGaN/GaN HEMTs. In order to reduce the internal electric field near the gate electrode of conventional HEMT and thereby to increase their DC characteristics, we applied three-layered stacking electrode schemes to the standard AlGaN/GaN HEMT structure. As a result, we found that the internal electric field was decreased by 70% at the same drain bias condition and the transconductance (gm) was improved by 11.4% for the proposed stair-type gate AlGaN/GaN HEMT, compared with those of the conventional single gate and field-plate enhanced AlGaN/GaN HEMTs.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.691-697
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• 2000

$Al_xGa_{1-x}N$ thin layers are promising materials for optical devices in the UV regions. $Al_xGa_{1-x}N$ thin layers w were grown on sapphire substrates by metalorgaruc chemical vapor deposition (MOCVD). The molar Al fraction and crystallinity of layers were deduced from synchrotron x-ray scattering experiment. Surface morphology were investigated using SEM and SPM. $Al_xGa_{1-x}N$ layers crystallinity were related with undoped GaN crystallinity. The Al mole fraction of $Al_xGa_{1-x}N$ layers affect the surface morphology of $Al_xGa_{1-x}N$ layers. The surface morphology was rough­e ened and the cracks were obse$\pi$ed by increasing the Al mole fractions.