• Title/Summary/Keyword: Al-Ti-Si-N

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세라믹막의 분획분자량 (Molecular Weight Cut-Off) 특성화

  • 현상훈;강범석;조철구;하호관
    • Proceedings of the Membrane Society of Korea Conference
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    • 1994.04a
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    • pp.58-58
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    • 1994
  • 슬립캐스팅법으로 제조한 튜브형 $\alpha$-알루미나 담체 (평균기공크기 = $0.1 \mum$)에 졸-겔 침지코팅(dipcoating) 또는 가압코팅 (pressurized coating) 법에 의하여 극미세입자 $\gamma$-AlOOH, $TiO_2, SiO_2$, 및 aluminosilicate diphasic 졸을 코팅한 후 300 ~ 500$\circ$C 에서 열처리하여 세라믹 복합막을 제조하였다. 복합막 전체에 대한 균열유무는 $N_2$ 기체투과율의 평균압력에 대한 의존성으로부터 평가하였으며, 한외여과 (ultrafiltration)에의 응용성을 규명하기 위하여 막의 재질 및 제조조건에 따른 polyethylene glycol (PEG) 수용액의 분획분자량 변화를 측정하였다. 합성 세라믹 복합막의 분획분자량 측정 결과 $SiO_2$의 경우 2,000 정도로 매우 우수하였으며 $\gamma-Al_2O_3, TiO_2$, 그리고 aluminosilcate 막들은 6,000 ~ 10,000 범위 값을 갖고 있었다. 또한 막의 기공크기 및 분획분자량을 제어하기 위한 방법으로서 $TiO_2$ 복합막을 300 ~ 700$\circ$C 에서 열처리하였으며 이들에 대한 분획분자량 변화를 비교 분석하였다.

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Formation of Metal Electrode on Si3N4 Substrate by Electrochemical Technique (전기화학 공정을 이용한 질화규소 기판 상의 금속 전극 형성에 관한 연구)

  • Shin, Sung-Chul;Kim, Ji-Won;Kwon, Se-Hun;Lim, Jae-Hong
    • Journal of the Korean institute of surface engineering
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    • v.49 no.6
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    • pp.530-538
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    • 2016
  • There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

A Study on the Improvement of Tool's Life by Applying DLC Sacrificial Layer on Nitride Hard Coated Drill Tools (드릴공구의 이종질화막상 DLC 희생층 적용을 통한 공구 수명 개선 연구)

  • Kang, Yong-Jin;Kim, Do Hyun;Jang, Young-Jun;Kim, Jongkuk
    • Journal of the Korean institute of surface engineering
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    • v.53 no.6
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    • pp.271-279
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    • 2020
  • Non-ferrous metals, widely used in the mechanical industry, are difficult to machine, particularly by drilling and tapping. Since non-ferrous metals have a strong tendency to adhere to the cutting tool, the tool life is greatly deteriorated. Diamond-like carbon (DLC) is one of the promising candidates to improve the performance and life of cutting tool due to their low frictional property. In this study, a sacrificial DLC layer is applied on the hard nitride coated drill tool to improve the durability. The DLC coatings are fabricated by controlling the acceleration voltage of the linear ion source in the range of 0.6~1.8 kV. As a result, the optimized hardness(20 GPa) and wear resistance(1.4 x 10-8 ㎣/N·m) were obtained at the 1.4 kV. Then, the optimized DLC coating is applied as an sacrificial layer on the hard nitride coating to evaluate the performance and life of cutting tool. The Vickers hardness of the composite coatings were similar to those of the nitride coatings (AlCrN, AlTiSiN), but the friction coefficients were significantly reduced to 0.13 compared to 0.63 of nitride coatings. The drilling test were performed on S55C plate using a drilling machine at rotation speed of 2,500 rpm and penetration rate of 0.25 m/rev. The result showed that the wear width of the composite coated drills were 200 % lower than those of the AlCrN, AlTiSiN coated drills. In addition, the cutting forces of the composite coated drills were 13 and 15 % lower than that of AlCrN, AlTiSiN coated drills, respectively, as it reduced the aluminum clogging. Finally, the application of the DLC sacrificial layer prevents initial chipping through its low friction property and improves drilling quality with efficient chip removal.

Formation of Ohmic Contacts on acceptor ion implanted 4H-SiC (이온 이온주입한 p-type 4H-SiC에의 오믹 접촉 형성)

  • Bahng, W.;Song, G.H.;Kim, H.W.;Seo, K.S.;Kim, S.C.;Kim, N.K.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.290-293
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    • 2003
  • Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

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UHV Materials (초고진공계재료)

  • 박동수
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.24-24
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    • 1998
  • 반도체장비를 포함하는 초고진공장비의 園훌化가 급속히 그리고 절실히 요구되고 있는 것이 현실정이다. 當面해서 실현할 국산진공장비의 대상은 廣範圍하다. 즉, 각종 진공 pump ( (rotary, dry, diffusion, cryo, ion, turbo melecular pump), 진공 chamber, 진공 line, gate valve 를 위 시 한 진공 V머ve, flange, gasket, fl않d야lU, mainpulater 퉁 진공 部品이 다. 진공계 의 핵심 은 適切하고 優良한 진공재료의 선태파 사용이다. 진공장비는 사용자가 원하는 진공도를 원하 는 시간 동안 륨空度를 유지해 주어야 한다. 진공재료 선태의 기준사항은:(1) 기체의 透過성 (2) 薰했훌 (3) 혔體放出특성 - -outgassing과 degassing- (4) 機械的 량훌度 (5) 온도 의존성 (6) 化學톡성 (7) 加I성 및 鎔接 성 (8) 課電특성 (9) 磁氣특성 (10) 高速함子 및 放射線 특성 (11) 經濟성 및 調達생 둥이 다. 우량한 초고진공계재료는 풍부하게 개발되어 왔고, 또 新材料들이 개발되고 있다. 여기에서는 주로 초고진공 내지는 극고진공계의 構造材料, 機能材料, 部品材料 일반파 몇가지 신재료의 특 성에 관해서 記述한다. M Mild SteeHSAE, 1112, 1010, 1020, 1022, etc)., S Stainless SteeHAlSI, 304, 304L, 310, 316, 321, 347): 구조재료, chamber, fl하1ges A Aluminum과 Alloys (1060, 1100, 2014, 4032, 6(뻐1): 구조재료, chamber, flanges, gaskets A AI, Al 떠loy는 SS에 代替하는 역 할올 시 작하고 있다. C Copper, Copper Alloys(C11$\alpha$)0, C26800, C61400, Cl7200): 내장인자, gasket, cryopanel, tubing T Titanium, Ziriconium, Haf띠um 및 Alloys: 특히 Ti은 10n pump 용 getter material 이 외 에 U UHV,XHV용 chamber계로서 관심올 끌고 있다. N Nickel, Nickel Alloys (200, 204, 211, monel, nichrome): 부식 방지 , 전자장치 , 자기 장치 귀 금속(Ag, Au, Pt, Pd, Rh, Ir, Os, Ru): 보조부품, gasket, filament, coating, thermocouple, 접 합부위 T TiC, SiC, zrC, HfC, TaC 둥의 탄화물과, BN, TiN, AlN 동의 질화물, 붕화물이 둥장하고 었 다. 유리: Soda Lime, Borosilicate, Potash Soda Lead: View Port, Chamber envelope C Ceramics: AlZ03, BeO, MgO, zrOz, SiOz, MgOzSiOz, 3Alz032SiOz, Z$textsc{k}$hSiOz S상N4: e electrical, thermal insulators, crucibles, boats, single crystals, sepctr려 windows 저자는 최근 저자들이 발견한 Zr-Ti-Cu-Ni-Be amorphous alloys coated cham뾰r가 radiation p proof로 이용될 수 있는 사실을 점검하고 었다 .. Z.Y. Hua 들은 Cs3Sb를 새로운 photocathode 재료로 보고하고 있다.

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Investigation of X-ray-induced Defects on Metals and Silicon by Using Coincidence Doppler Broadening Positron Annihilation Spectroscopy

  • Lee, C.Y.
    • Journal of the Korean Physical Society
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    • v.73 no.12
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    • pp.1895-1898
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    • 2018
  • The mechanical properties of Al, Ti, Fe, and Cu metals p-type Si, and n-type Si were investigated by using coincidence Doppler broadening (CDB) positron annihilation spectroscopy. The samples in this experiment were irradiated by using X-rays at generating powers for up to 9 kW. The data taken after the irradiation showed all the characteristic features predicted from defects with vacancies. The S parameter values of the metals were generally less than those of semiconductors such as p-type Si and n-type Si. The relationship between n-type Si and p-type Si were more affected when n-type Si rather than p-type Si was irradiated with X-rays.

Role of oxidant on polishing selectivity in the chemical mechanical planarization of W/Ti/TiN layers (W/Ti/TiN막의 연마 선택비 개선을 위한 산화제의 역할)

  • Lee, Kyoung-Jin;Seo, Yong-Jin;Park, Chang-Jun;Kim, Gi-Uk;Kim, Sang-Yong;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.33-36
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    • 2003
  • Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina $(Al_2O_3)$ abrasive containing slurry with 5 % $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with 5 % $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

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The Effect of Heat Treatment on the Corrosion-Resistance for Ti-6Al-4V Alloy (Ti-6Al-4V합금의 열처리가 내식성에 미치는 영향)

  • 백신영;나은영
    • Journal of Advanced Marine Engineering and Technology
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    • v.27 no.3
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    • pp.453-459
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    • 2003
  • In this study, the effect of heat treatment to the electrochemical polarization resistance for the Ti-6Al-4V alloy was measured. The solution heat treatments were carried out at $1066^{circ}E, 966^{\circ}$E$, followed by aging heat treated $550^{circ}E, 600^{circ}E, and 650^{circ}E$. The electrochemical polarization resistance behavior was measured by potentio-dynamic polarization in the 1N $HNO_3$ + 15ppm HF solution. The obtained results were as follows. 1. As solution heat temperature increased. the corrosion potential was increased, whereas passive current density and critical current density were decreased. 2. As aging heat temperature increased, the corrosion potential was almost constant, but passive current density was decreased 3. The results of composition test measured by EDS at grain boundary and near $\gamma'$ precipitates indicated that S, Cl. and Si which originated from base metal were segregated at the grain boundaries Al and Ti which were the main alloying element in $\gamma'$ were depleted at the $\gamma'$ precipitated. The depletion of Al and Ti in $\gamma'$ was caused to early breakdown of passive film.

THE BOND CHARACTERISTICS OF PORCELAIN FUSED BY TITANIUM SURFACE MODIFICATION (타이타늄의 표면개질에 따른 도재 결합 특성)

  • Choi, Taek-Huw;Park, Sang-Won;Vang, Mong-Sook;Yang, Hong-So;Park, Ha-Ok;Lim, Hyun-Pil;Oh, Gye-Jeong;Kim, Hyun-Seung;Lee, Kwang-Min;Lee, Kyung-Ku
    • The Journal of Korean Academy of Prosthodontics
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    • v.45 no.2
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    • pp.169-181
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    • 2007
  • Statement of problem: Titanium is well known as a proper metal for the dental restorations, because it has an excellent biocompatibility, resistance to corrosion, and mechanical property. However, adhesion between titanium and dental porcelains is related to the diffusion of oxygen to the reaction layers formed on cast-titanium surfaces during porcelain firing and those oxidized layers make the adhesion difficult to be formed. Many studies using mechanical, chemical and physical methods to enhance the titanium-ceramic adhesion have been actively performed. Purpose: This study meant to comparatively analyse the adhesion characteristics depending on different titanium surface coatings after coating the casts and wrought titanium surfaces with Au and TiN. Material and method: In this study, the titanium specimens (CP-Ti, Grade 2, Kobe still Co. Japan) were categorized into cast and wrought titanium. The wrought titanium was cast by using the MgO-based investment(Selevest CB, Selec). The cast and wrought titanium were treated with Au coating($ParaOne^{(R)}$., Gold Ion Sputter, Model PS-1200) and TiN coating(ATEC system, Korea) and the ultra low fusing dental porcelain was fused and fired onto the samples. Biaxial flection test was done on the fired samples and the porcelain was separated. The adhesion characteristics of porcelain and titanium after firing and the specimen surfaces before and after the porcelain fracture test were observed with SEM. The atomic percent of Si on all sample surfaces was comparatively analysed by EDS. In addition, the constituents of specimen surface layers after the porcelain fracture and the formed compound were evaluated by X-ray diffraction diagnosis. Result: The results of this study were obtained as follows : 1. The surface characteristics of cast and wrought titanium after surface treatment(Au, TiN, $Al_2O_3$ sandblasting) were similar and each cast and wrought titanium showed similar bonding characteristics. 2. Before and after the biaxial flection test, the highest atomic weight change of Si component was found in $Al_2O_3$ sandblasted wrought titanium(28.6at.% $\rightarrow$ 8.3at.%). On the other hand, the least change was seen in Au-Pd-In alloy(24.5at.% $\rightarrow$ 9.1at.%). 3. Much amount of Si components was uniformly distributed in Au and TiN coated titanium, but less amount of Si's was unevenly dispersed on Al2O3 sandblasting surfaces. 4. In X-ray diffraction diagnosis after porcelain debonding, we could see $Au_2Ti$ compound and TiN coating layers on Au and TiN coated surfaces and $TiO_2$, typical oxide of titanium, on all titanium surfaces. 5. Debonding of porcelain on cast and wrought titanium surface after the biaxial flection is considered as a result of adhesion deterioration between coating layers and titanium surfaces. We found that there are both adhesive failure and cohesive failure at the same time. Conclusion: These results showed that the titanium-ceramic adhesion could be improved by coating cast and wrought titanium surfaces with Au and TiN when making porcelain fused to metal crowns. In order to use porcelain fused to titanium clinically, it is considered that coating technique to enhance the bonding strength between coating kKlayers and titanium surfaces should be developed first.