• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1303-1304
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• 2007

The composites were fabricated, respectively, using 61[vol.%]SiC-39[vol.%]$TiB_2$ and using 61[vol.%]SiC-39[vol.%]$ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_{2}O_{3}+Y_{2}O_{3}$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was occurred on the SiC-$TiB_2$ and SiC-$ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 226.06[Mpa] and 86.38[Gpa] in SiC-$ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SiC-$ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the SiC-$TiB_2$ and SiC-$ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the value of $6.88{\times}10^{-3}/[^{\circ}C]$ and $3.57{\times}10^{-3}/[^{\circ}C]$ for SiC-$ZrB_2$ and SiC-$TiB_2$ composite in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$.

• 전기학회논문지
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• 제57권5호
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• 한국재료학회지
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• 제9권3호
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• pp.315-321
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• 1999

금속기지 복합물은 구조용 재료로서 매우 우수한 성질을 지니고 있어 광범위하게 연구되어져 왔다. $Al_2O_3$와 SiC는 그들의 우수한 기계적 특성 때문에 일반적인 보강재로서 사용되어져 왔다. 그러나 이들 세라믹 보강재는 비싼 재조 비용 때문에 특별한 목적을 위해서만 한정되어 사용되어져 왔다. 본 연구에서는 우리는 Al 합금기지 복합물에서 SHS법에 의해 합성된 $Al_2O_3$-SiC 분말의 보강재로서의 응용 가능성을 살펴보았다. 또한 $Al_2O_3$단섬유를 Al기지 하이브리드 복합물에 적용하기 위하여 합성된 분말과 함께 첨가하였다. 25vol% 강화재의 복합물을 제조하기 위하여 용탕단조법을 사용하였다. 미세구조와 결정구조는 SEM, OM 그리고 XRD로 관찰하였고 압축시험과 마모시험으로 기계적인 성질들을 조사하였다.

• 한국자동차공학회논문집
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• 제7권9호
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• pp.138-145
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• 1999

Surface hardening of AC4C aluminium alloy with TiC powders was obtained by plasma transferred are (PTA) method, Bead appearance, microstrucutre and wear behavior were characterized in relation to the torch current, powder feed rate and wear condition. The width and the depth of bead were mainly increased with increasing torch current. The comparison of wear behavior between AC4C alloy and PTA treated AC4C alloy showed the remarkable enhancement of wear resistance.

• 한국분말재료학회지
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• 제9권6호
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• pp.441-448
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• 2002

Dispersions of non-soluble ceramic particles in a metallic matrix can enhance the strength and heat resistance of materials. With the advent of mechanical alloying it became possible to put the theoretical concept into practice by incorporating very fine particles in a flirty uniform distribution into often oxidation- and corrosion- resistant metal matrices. e.g. superalloys. The present paper will give an overview about the mechanical alloying technique as a dry, high energy ball milling process for producing composite metal powders with a fine controlled microstructure. The common way is milling of a mixture of metallic and nonmetallic powders (e.g. oxides. carbides, nitrides, borides) in a high energy ball mill. The heavy mechanical deformation during milling causes also fracture of the ceramic particles to be distributed homogeneously by further milling. The mechanisms of the process are described. To obtain a homogeneous distribution of nano-sized dispersoids in a more ductile matrix (e.g. aluminium-or copper based alloys) a reaction milling is suitable. Dispersoid can be formed in a solid state reaction by introducing materials that react with the matrix either during milling or during a subsequent heat treatment. The pre-conditions for obtaining high quality materials, which require a homogeneous distribution of small dis-persoids, are: milling behaviour of the ductile phase (Al, Cu) will be improved by the additives (e.g. graphite), homogeneous introduction of the additives into the granules is possible and the additive reacts with the matrix or an alloying element to form hard particles that are inert with respect to the matrix also at elevated temperatures. The mechanism of the in-situ formation of dispersoids is described using copper-based alloys as an example. A comparison between the in-situ formation of dispersoids (TiC) in the copper matrix and the milling of Cu-TiC mixtures is given with respect to the microstructure and properties, obtained.