• Journal of Korea Foundry Society
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• v.23 no.2
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• pp.77-85
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• 2003

Some alloying elements such as Cr, B, Ti and Si were added individually or as a mixture to Fe-30 at.%Al alloys. The alloys were melted using an arc furnace and then heat-treated for homogenization at 1000$^{\circ}C$ for 7 days and followed by rolling at 1000$^{\circ}C$. The alloying elements on rolling characteristics were investigated by the microstructures and fracture mode before and after rolling. The microstructures before rolling showed that all of the alloys had equiaxed grains. On the other hand, the microstructures of rolling plane as well as its perpendicular plane became elongated after rolling. The alloys such as Fe-30Al, Fe-30Al-3Ti, Fe-30Al-0.5B, Fe-30Al-5Cr and Fe-30Al-3Ti-0.5B revealed better rolling behaviour from the point that intergranular and cleavage fractures were not fundamentally occurred. But the addition of 5Ti or 3Si to Fe-Al alloys had detrimental effects. The Ti-added alloy system such as Fe-30Al-5Ti, Fe-30Al-5Ti-5Cr, Fe-30Al-3Ti-5Cr and Fe-30Al-5Ti-0.5B were cracked through grain and showed cleavage fracture. The Si-added alloy system such as Fe-30Al-5Si, Fe-27Al-3Si and Fe-27Al-5Cr-3Si were cracked along the grain boundary and showed intergranular fracture. $DO_3{\leftrightarrow}B_2$ transition temperature of Fe-30at.%Al alloy was 520$^{\circ}C$, whereas the addition of 3Ti and 3Ti+0.5B comparably increased the temperature to 797 and 773$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.111-114
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• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.223-227
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• 2009

The precipitates, hardness, and tensile properties of Al-6.2Si-2.9Cu AC2B alloy were investigated with respect to solution treatment time at $500^{\circ}C$. $Al(Cu)-Al_2Cu$ eutectic, Si, ${\theta}-(Al_2Cu)$, and $Q-(Al_5Cu_2Mg_8Si_6)$ phases were observed in the as-cast specimen. With increasing the solution treatment time at $500^{\circ}C$, the $Al(Cu)-Al_2Cu$ eutectic and ${\theta}-(Al_2Cu)$ phases were gradually reduced and finally almost disappeared in 5 h. The mechanical properties, such as hardness, tensile strength, and elongation, were improved with solution treatment time until about 5 h due to the dissolution of the $Al_2Cu$ particles. With further holding time, the mechanical properties did not change much. The solution treated specimens for over 5 h at $500^{\circ}C$ exhibit almost the same tensile properties even after aging at $250^{\circ}C$ for 3.5 h. Accordingly, the optimal solution treatment condition of the Al-Si-Cu AC2B alloy is considered to be 5 h at $500^{\circ}C$.

• The Korean Journal of Ceramics
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• v.1 no.3
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• pp.147-151
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• 1995

Porous composite of $Al_2O_3$ and AIN based mullite and SiC can be prepared by alumium reaction synthesis and atmosphere controllied sintering in order to improve the durability of a gas filter body. The porous $Al_2O_3$-AIN-mullite, which has a strength of 168 kg/$\textrm{cm}^2$ and porosity of 51.59%, could be obtained by stmospheric firing at $1600^{\circ}C$ and the porous $Al_2O_3$-AIN-SiC with a porosity of 33% and strength of 977 kg/$\textrm{cm}^2$, could also be prepared. The average pore size has been changed from 0.2$\mu\textrm{m}$ in a reduction atmosphere and to 2$\mu\textrm{m}$ in an air atmosphere, respectively.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.46-49
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• 2003

Aluminum based metal matrix composites(MMCs) are well known for their high specific strength, stiffness and hardness. They are gaining further importance because of their high wear resistance. In this study, Al/Saffil-20%, Al/Saffil-5%/Al2O3(particle type)-15% and Al/Saffil-5%/SiC(particle type)-15% hybird MMCs' wear behavior were characterized by the pin-on-disk test under various normal load The superior wear resistance was exhibited at Al/Saffil-5%/SiC(particle type)-15% MMCs. And this MMCs' predominant wear mechanism is subsurface cracking in the low load wear regime. Others(Al/Saffil-20%, Al/Saffil-5%/Al2O3(particle type)-15%) showed the similar wear resistance with each other at the same test condition. In the low load & room temperature condition, the wear resistance was improved due to the high hardness of the ceramic reinforcements. As the test load increased, the wear properties were governed by the wear properties of matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.977-982
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• 2005

Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.25-28
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• 2006

This paper dealt with the LPS process for the development of high performance SiC materials, based on the detailed analysis of their microstructure and mechanical properties. The submicron SiC powder was used for the fabrication of LPS-SiC materials. A mixture of $Al_2O_3$ and $Y_2O_3$ particles was also used as a sintering additive in the LPS process. LPS-SiC materials were fabricated at different temperatures, using various additive composition ratio ($Al_2O_3/Y_2O_3$). The total amount of additive materials ($Al_2O_3+Y_2O_3$) was fixed as 10 wt%. The characterization Of LPS-SiC materials was investigated by means of SEM, XRD and three point bending test. The LPS-SiC material represented a relative density of about 98 % and a flexural strength of about 800MPa, when it was fabricated at the temperature of $1820^{\circ}C$ and the additive compositional ratio of 1.5.

• Journal of IKEEE
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• v.25 no.1
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• pp.1-9
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• 2021

In this paper, a 4H-SiC UMOSFET was studied which is suitable for high voltage and high current applications. In general, SiO2 is a material most commonly used as a gate dielectric material in SiC MOSFETs. However, since the dielectric constant value is 2.5 times lower than 4H-SiC, it suffers a high electric field and has poor characteristics in the SiO2/SiC junction. Therefore, the static characteristics of a device with high-k material as a gate dielectric and a device with SiO2 were compared using TCAD simulation. The results show BV decreased, VTH decreased, gm increased, and Ron decreased. Especially when the temperature is 300K, the Ron of Al2O3 and HfO2 decreases by 66.29% and 69.49%. and at 600K, Ron decreases by 39.71% and 49.88%, respectively. Thus, Al2O3 and HfO2 are suitable as gate dielectric materials for high voltage SiC MOSFET.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.817-824
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• 1999

The $Al_2$$O_3$-SiC composite powder was prepared by Self-propagating High-Temperature Synthesis(SHS) process using $SiO_2$Al and C powders as raw material. The effects of the molar ratio in raw material, compaction pressure, initial temperature of reactants on the products and combustion process were studied. Self-propagating high temperature synthesis of $SiO_2$/Al/C system should be preheated above $400^{\circ}C$ owing to the low combustion temperature. As the result of the combustion reaction, the purity of final product became better than that of reactants. In this system, the optimum molar ratio of $SiO_2$:Al:C was 3.0:4.0:6.0. The free carbon was removed by roasting at $650^{\circ}C$ for 30min. In this study, pressureless sintering was very dffective both for controlling the disintegration of specimen with powder bed and for obtaining dense sintered-body at $1700^{\circ}C$. The sintered-body produced with hot-pressing was about 98% of the theoretical relative density.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.429-435
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• 1995

Al2O3-SiC-C(ASC) refractory materials were prepared from kaolin using thermit reaction. The mixed powder (A-K) for the thermit reaction was composed of Hadong kaolin, C(graphite) and Al. A-S(SiO2＋C＋Al) composition was also employed to compare with A-K in respect to reactability. As a result of XRD patterns of A-K sample after thermit reaction, and firing at 140$0^{\circ}C$ for 3hrs in Ar atmosphere, it was possible to use as a ASC refractory materials.