• Journal of the Korean Society for Heat Treatment
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• v.12 no.1
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• pp.47-54
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• 1999

Microstructure of Al-Si coated PWA 1426 alloy was studied. Diffusion coated specimens were heat treated for 4hr at $870{\sim}1087^{\circ}C$ and then were examined the changes of microstructure and interfacial compound by optical microscopy, SEM and EDS. According to the result of EDS, it is supposed that the coated layer was composed of $Ni_2Al_3$. When diffusion treatment was conducted at $1087^{\circ}C$, coated layer varied from $Ni_2Al_3$ to NiAl phase and composed of mixed, denuded and inter-diffusion layer.

• The Korean Journal of Ceramics
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• v.1 no.3
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• pp.147-151
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• 1995

Porous composite of $Al_2O_3$ and AIN based mullite and SiC can be prepared by alumium reaction synthesis and atmosphere controllied sintering in order to improve the durability of a gas filter body. The porous $Al_2O_3$-AIN-mullite, which has a strength of 168 kg/$\textrm{cm}^2$ and porosity of 51.59%, could be obtained by stmospheric firing at $1600^{\circ}C$ and the porous $Al_2O_3$-AIN-SiC with a porosity of 33% and strength of 977 kg/$\textrm{cm}^2$, could also be prepared. The average pore size has been changed from 0.2$\mu\textrm{m}$ in a reduction atmosphere and to 2$\mu\textrm{m}$ in an air atmosphere, respectively.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.376-382
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• 2006

In the $Al(OH)_3-SiO_2-AlF_3$ system, leaf-shaped fluorotopaz was first formed at $800^{\circ}C$ and mullite whisker was formed at $1,100^{\circ}C$. The mass transportation of Al and Si as gas phase, the fast reaction and growth, and the absence of liquid phase existence in mullite whisker showed that the formation and growth of mullite was from the solid-vapor reaction.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2420-2424
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• 2009

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $Al_2O_3/p-Si$ structures. The $Al_2O_3$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [$Al(CH_3)_3$, TMA] and $H_2O$ were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $Al_2O_3$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• Bulletin of the Korean Chemical Society
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• v.11 no.1
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• pp.1-7
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• 1990

We present a theoretical investigation on the etching of an Al solid by $SiCl_4$ molecules at a collision energy of 600 eV. The classical trajectory method is employed to calculate Al etching yields, degree of anisotropy, kinetic energy distribution and angular distribution. The calculated results are compared with the reaction of a Cu solid by $SiCl_4$. The major products of the reaction are aluminum monomers and dimers together with considerable quantities of multimers. The Al solid shows better etching yield and better anisotropy than the Cu solid. This is consistent with the problem in the CMOS micro-fabrication of the CuAl and CuAlSi alloys. The relevance of these calculations for the dry etching of CuAl alloy is discussed.

• Applied Microscopy
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• v.30 no.3
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• pp.249-254
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• 2000

We investigated the microstructure, electrical property, and magnetic property of Co/Al multilayer after annealing treatment. CoAl was formed during depositing Co/Al multilayer due to the interfacial reaction. After annealing treatment, $Co_2Si$ was formed at the Co/Si interface. The sheet resistance of Co 2 nm/Al 2 nm multilayer have the lowest value and the Rs of multilayer decreased with the increase of annealing temperature due to the formation of $Co_2Si$ phase. The Ms of 2 nm Co/2 nm Al multilayer have the lowest value and the Ms of multilayer increased with the increase of film thickness.

• Journal of Ocean Engineering and Technology
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• v.22 no.4
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• pp.59-64
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• 2008

The mechanical properties of liquid phase sintered (LPS) SiC materials, with the addition of oxide powder, were investigated, in conjunction with a detailed analysis of their microstructures. LPS-SiC materials were fabricated at a temperature of 1820 $^{\circ}C$ under an argon atmosphere, using three different starting sizes of SiC particles. The sintering additive for the fabrication of the LPS-SiC materials was an $Al_2O_3-Y_2O_3$ mixture with a constant composition ratio ($Al_2O_3/Y_2O_3$: 1.5). The particle sizes of the commercial SiC powderswere 30 nm, 0.3 $\mu$m, and 3.0 $\mu$m. The flexural strength of the LPS-SiC materials was also examined at elevated temperatures. A decrease in the starting size of the SiC particles led to an increase in the flexural strength of the LPS-SiC materials, accompanying a highly dense morphology with the creation of a secondary phase. Such a secondary phase was identified as $Y_3Al_2(AlO_4)2$. The flexural strength of the LPS-SiC materials greatly decreased with an increase in the test temperature, due to the creation of a large amount of pores.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.466-472
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• 2008

Purple Gold is the alloy consisting of 78wt%Au-22wt%Al, and is expressed as a chemical formula, $AuAl_2$. Lately it is being used for the material of accessories or the decorative ornaments, being one of the colored golds having the peculiar purple color, like White Gold and Pink Gold. Purple Gold has the weak point in shaping through casting process due to the bad malleability and castability, being the intermetalic compound of Au and Al. Therefore, it is possible to produce the final product only by the cutting and the grinding process or to use it as a decorative coat with the thin film evaporation. This study implemented two kinds of thin film experiments. One is the case that heat treatment was made after Au and Al deposition evaporated separately with a weight ratio 78:22 on the 200nm$SiO_2$/Si substrate. The other is the case that the surface deposition was made through the vacuum evaporation, keeping the glass substrate temperature remain room temperature, using the bulk $AuAl_2$ as a source. The final film property was measured, focusing on the Purple Gold's color and thickness through the bare eye inspection, the microstructure analysis, the surface resistance analysis, the color difference analysis, and XRD analysis. Purple Gold was not formed, as the excessive surface agglomeration occurred, in case of being produced and treated thermally with 12.5nmAu/40nmAl/200nm$SiO_2$/Si structure. Our results suggest that of Purple Gold films, showing the same purple color as the bulk's, were successfully deposited with the direct thermal evaporation from the $AuAl_2$ bulk source.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.178-182
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• 1991

Contact resistance and contact leakage current of the $Al/TiSi_2/Si$ system are investigated for $N^+\;and\;P^+$ junctions. Titanium disilicide is one of the most common silicides because of its thermal stability, ability, to form selective formation and low resistivity. In this paper, the effect of RTA temperature and Junction implant dose are characterized. The $TiSi_2$ contact resistance to $N^+$ silicon is lower than that of Al to $N^+$ silicon, but $TiSi_2$ of contact resistance to $P^+$ silicon is higher than that of Al to $P^+$ silicon. The $TiSi_2$ of contact leakage current to $N^+\;and\;P^+$ silicon is similar to that of Al contact.

• Journal of Korea Foundry Society
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• v.29 no.2
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• pp.78-85
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• 2009

Functionally graded microstructure of centrifugal cast Al-Si alloy, especially distribution of primary Si particles according to the changes of melt pouring temperature and rotation frequency was investigated by numerical simulation. Moving velocity of Si particles increased as the melt pouring temperature and rotational frequency of mold increased. Therefore, segregation tendency of primary Si particles toward inner side of cylindrical sample increased as the melt pouring temperature and rotational frequency of mold increased. Rich distribution region of particles was located at 0.9, 0.7, 0.4 mm from inner surface of cylindrical sample under the centrifugal cast condition of $750^{\circ}C$ melt pouring temperature and 1500, 2000 and 2500 rpm mold rotational frequencies, respectively, by numerical simulation.