• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.129-129
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• 2011

ISFET (ion sensitive field effect transistor)는 용액 중의 각종 이온 농도를 측정하는 반도체 이온 센서이다. ISFET는 작은 소자 크기, 견고한 구조, 즉각적인 반응속도, 기존의 CMOS공정과 호환이 가능하다는 장점이 있다. ISFET의 기본 구조는 기존의 MOSFET (metal oxide semiconductor field effect transistor)에서 고안되었으며, ISFET는 기존의 MOSFET의 게이트 전극 부분이 기준전극과 전해질로 대체되어진 구조를 가지고 있다. ISFET소자의 pH 감지 메커니즘은 감지막의 표면에서 pH용액 속의 이온들이 감지막의 표면에서 속박되어 막의 표면전위의 변화를 유발하는 것을 이용한다. 그 결과, ISFET의 문턱전압의 변화를 일으키게 되고 드레인 전류의 양 또한 달라지게 된다. ISFET의 높은 pH감지능력을 얻기 위하여 높은 high-k물질 들이 감지막으로서 연구되었다. Al2O3와 HfO2는 높은 유전상수, non-ideal 효과에 대한 immunity 그리고 높은 pH 감지능력 등 많은 장점을 가지고 있는 물질로 알려졌다. 본 연구에서는, SiO2/HfO2/Al2O3 (OHA) 적층막을 이용한 EIS (electrolyte- insulator-silicon) pH센서를 제작하였다. EIS구조는 ISFET로의 적용이 용이하며 ISFET보다 제작 방법과 소자 구조가 간단하다는 장점이 있다. HfO2은 22~25의 높은 유전상수를 가지며 높은 pH 감지능력으로 인하여 감지막으로서 많은 연구가 이루어지고 있는 물질이다. 하지만 HfO2의 물질이 가진 고유의 특성상 화학적 용액에 대한 non-ideal 효과는 다른 금속계열 산화막에 비하여 취약한 모습을 보인다. 반면에 Al2O3의 유전상수는 HfO2보다 작지만 화학용액으로 인한 손상에 대하여 강한 immunity가 있는 재료이다. 이러한 물질들의 성질을 고려하여 OHA의 새로운 감지막의 적층구조를 생각하였다. 먼저 Si과 high-k물질의 양호한 계면상태를 이루기 위하여 5 nm의 얇은 SiO2막을 완충막으로서 성장시켰다. 다음으로 높은 유전상수를 가지고 있는 8 nm의 HfO2을 증착시킴으로서 소자의 물리적 손상에 대한 안정성을 향상시켰다. 최종적으로 화학용액과 직접적인 접촉이 되는 부분은 non-ideal 효과에 강한 Al2O3을 적층하여 소자의 화학적 손상에 문제점을 개선시켰다. 결론적으로 감지막의 적층 모델링을 통하여 각각의 high-k 물질이 가진 고유의 특성에 대한 한계점을 극복함으로써 높은 pH 감지능력뿐만 아니라 신뢰성 있는 pH 센서가 제작 되었다.

• Journal of Korea Foundry Society
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• v.17 no.4
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• pp.347-355
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• 1997

It is well known that the coarse primary Si in hypereutectic Al-Si alloys deteriorate castability, machinability, and mechanical properties. So, many treatment has been tried to refine the primary Si increasing cooling rate and adding refinement agent. Therefore. the purpose of our work was the observation of the effect on the refinement of primary Si and the analysis of the trend to apply to the casting process by changing the amount of P addition and the cooling rate while fixing the temperature at $750^{\circ}C$ of P addition and the type of AlCuP. In the condition of amount of P addition was fixed, primary Si was finer as cooling rate increased but in case of cooling rate was fixed, the effect of refinement was resisted as incersed the amount of P addition. At a relatively slow cooling rate of $22^{\circ}C/sec$, refinement was governed by the amount of P addition rather than cooling rate. At elevated cooling rate of $51^{\circ}C/sec$ and $99^{\circ}C/sec$, the undercooling due to faster cooling rate promoted nucleation of primary Si rather than P addition more significantly.

• Journal of Korea Foundry Society
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• v.9 no.3
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• pp.182-194
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• 1989

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1994.10b
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• pp.26-26
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• 1994

• Journal of the Korean Magnetics Society
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• v.6 no.4
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• pp.218-224
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• 1996

The magnetic properties and crystallization behaviors of $Fe_{83-x}Al_{x}Nb_{5}B_{12}(X=1~5at%)$ alloys were investigated. The $Fe_{80}Al_{3}Nb_{5}B_{12}$ alloy was developed a very good soft magnetic material with ultra-fine grain structure in Fe-Al-Nb-B system alloys. When 1 at% of Cu was added in Fe-Al-Nb-B alloy, the soft magnetic properties were found to improve significantly through the reduction of the grain size upto about 6~7 nm at $450^{\circ}C$. The magnetic properties of the $Fe_{79}Al_{3}Nb_{5}B_{12}Cu_{1}$ alloy were as follows : ${\mu}_{eff}(1\;kHz)=26,000,\;B_{10}=1.45\;T,\;H_{c}=25\;mOe,\;P_{c}(100\;kHz,\;0.2\;T)=55\;W/kg$, respectively.

• Corrosion Science and Technology
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• v.11 no.1
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• pp.9-14
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• 2012

The formation of the Fe-Al inhibition layer in hot-dip galvanizing is a confusing issue for a long time. This study presents a characterization result on the inhibition layer formed on C-Mn-Cr and C-Mn-Si dual-phase steels after a short time galvanizing. The samples were annealed at $800^{\circ}C$ for 60 s in $N_{2}$-10% $H_{2}$ atmosphere with a dew point of $-30^{\circ}C$, and were then galvanized in a bath containing 0.2 %Al. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was employed for characterization. The TEM electron diffraction shows that only $Fe_{2}Al_{5}$ intermetallic phase was formed. No orientation relationship between the $Fe_{2}Al_{5}$ phase and the steel substrate could be identified. Two peaks of Al 2p photoelectrons, one from metallic aluminum and the other from $Al^{3+}$ ions, were detected in the inhibition layer, indicating that the layer is in fact a mixture of $Fe_{2}Al_{5}$ and $Al_{2}O_{3}$. TEM/EDS analysis verifies the existence of $Al_{2}O_{3}$ in the boundaries of $Fe_{2}Al_{5}$ grains. The nucleation of $Fe_{2}Al_{5}$ and the reduction of the surface oxide probably proceeded concurrently on galvanizing, and the residual oxides prohibited the heteroepitaxial growth of $Fe_{2}Al_{5}$.

• Journal of the Korean Chemical Society
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• v.40 no.4
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• pp.264-272
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• 1996

Cluster models of the Υ-Al2O3(111) and the Pt(111) surfaces have been used in an atom superposition and electron delocalization molecular orbital study of interfacial bond strengths between them. The reduced extents for Al3+ are due to the ratio of oxygen to aluminum atoms. The greater the reduced extent for Al3+ is, the stronger the binding energy is to Pt atoms in a cluster. The oxygen-covered surfaces of Υ-Al2O3(111) are shown to bind more weakly to Pt atoms, while the binding to the oxygen-covered surface formed under oxidizing conditions of Pt atoms is strong. The interfacial bond of platinum-alumina may be possible by a charge-transfer mechanism from the platinum surface to the partially empty O-2p band and Al3+ dangling surface orbital.

• The Korean Journal of Food And Nutrition
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• v.31 no.1
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• pp.195-201
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• 2018

This study was intended to investigate the characteristics of muffins prepared with allulose which is low-calorie and physiologically functional rare sugar. Volume and specific volume of muffins increased significantly with allulose addition, but not with its contents. Muffin heights also increased as allulose was added more. Baking loss rate and moisture contents were not significantly different among samples. Allulose seemed to have nearly same water holding capacity with sucrose. Lightness of muffin crust and crumb both decreased, but redness and yellowness increased according to allulose, the reducing sugar addition by Maillard reaction. In the texture profile analysis, Hardness of AL100 was higher significantly (p<0.05) and springiness, cohesiveness and fracturability increased according to the allulose contents. In the sensory evaluation, AL0 was the sweetest and AL0 and AL25 got higher overall acceptance score. Physical characteristics were not different (p<0.05) among AL0, Al25 and AL50. As a result, 25% sucrose substitution with allulose can provide low-calorie, anti-hyperglycemic and tasty muffin.

• Resources Recycling
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• v.20 no.3
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• pp.68-76
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• 2011

For the separation of aluminum and iron from platinum mixtures, extraction resins were synthesized and separation efficiencies were compared with those by commercial one, $P_{204}$. During synthesis, the suspension polymerization method was adopted with D2EHPA as an extractant. Also, benzoyl peroxide as a starter was divided into 3parts and injected for the uniform size and dispersion of resin particles. Comparison tests resulted in 100% separation of Fe and Pt for both synthetic and $P_{204}$ resins. In case of Al and Pt, synthetic and $P_{204}$ resin gave extraction efficiencies of 99.9% and 98.9%, respectively. Difference in extractant contents of synthetic resin(61.8%) and $P_{204}$(60%) was considered to give differences in separation efficiencies of aluminum and iron elements. For both resins, separation efficiencies of Al and Fe increased up to $55^{\circ}C$. According to FT-IR analyses of both resins, specific peaks of D2EHPA and crosslinked polystyrene were identified at the wavenumber of $1000cm^{-1}$ and $2900cm^{-1}$ respectively.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.5-12
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• 1992

We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.