• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.525-526
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• 2009

we investigated the effect of rapid thermal annealing (RTA) temperature on photoluminescence (PL) of 635 nm InGaP/InGaAlP multiple quantum well structure. RTA is performed with the quantum well structure with 5.5 nm of well width. The highest PL peak intensity is shown at 1 min. of RTA at $720^{\circ}C$ sample as 3 times higher as compared to the as-grown sample. The effect may be assigned to an expected reduction in number of nonradiative recombination centers in the quantum well.

• Journal of the Mineralogical Society of Korea
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• v.3 no.1
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• pp.7-17
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• 1990

화산 유리질 암석을 출발 물질로 사용하여 저온 ($80^{\circ}C$)에서 수열 처리하여 Na-P Na-X 및 Na-A 제올라이트를 합성하였다. 합성과정은 (1) 유리질 분말 시료와 알칼리 용액과의 용해.변질 반응에 의한 1차적인 Na-P의 합성 방식과 (2) 여기서 잔류된 규산질 모액에 Al(OH)3나 NaAlO2의 수용액을 공급하여 보다 고순도의 Na-P, Na-X 및 Na-A를 효과적으로 합성할 수 있었다. 원암의 암상과 조성은 제올라이트들의 화학 조성과 순도 및 백색도같은 물리적 특성에는 영향을 주지만, 합성된 제올라이트의 광물종을 규제하는 주된 요인은 아닌 것으로 해석된다. 합성된 제올라이트의 광물상은 반응 용액의 pH, Al(OH)4 및 Na+에 대한 농도 조건에 주로 의존되는 경향을 나타낸다. 또한 화산 유리질 암석을 제올라이트 합성원료로 활용하는 데에 있어서 (2)와 같음 합성 방안이 보완적으로 시행되면 그 생산성과 효율성을 제고시킬 수 있을 것으로 여겨진다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1056-1061
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• 2007

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. The surface morphology was dramatically changed with varying the SiC/Al ratio. When the SiC/Al ratio of 90/1 was used, the step bunching was not observed in this magnification and the ratio of SiC/Al is an optimized range to grow of p-type SiC epitaxial layer. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. 4H-SiC MESFETs haying a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized. It was confirmed that the increase of the negative voltage applied on the gate reduced the drain current, showing normal operation of FET device.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.128-131
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• 2009

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

• Journal of the Korean Institute of Gas
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• v.16 no.5
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• pp.7-13
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• 2012

An experimental study has been done to investigate the explosion characteristics of aluminum powders with different sizes and concentrations in a 20 L spherical explosion vessel. Two different sizes of aluminum powder were used : $15.1{\mu}m$ and $34.8{\mu}m$ with a volume mean diameter. The results revealed that $15.1{\mu}m$ Al powder has a Lower explosion limit (LEL) of $40g/m^3$, a maximun explosion pressure ($P_{max}$) of 9.8 bar and a maximum rate of pressure rise ($[dP/dt]_{max}$) of 1852 bar/s, in $34.8{\mu}m$ Al powder, LEL of $70g/m^3$, $P_{max}$ of 7.9 bar and $[dP/dt]_{max}$ of 322 bar/s. The LEL of Al powders tended to increase with the increase of particle size. Also, it was found that the flame velocity calculated from the powder with $15.1{\mu}m$ was about 5 times higher than that of the powder of $34.8{\mu}m$.

• Journal of the Korean Society of Radiology
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• v.9 no.1
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• pp.55-59
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• 2015

Research about the proton nuclear reaction is actively achieving on the proton therapy including material development of fusion reactor. The proton induced gamma ray energy(2754, 1386 keV) spectrum of 27Al(p,3p+n)24Na reaction was measured with 100 MeV high energy proton beam. The proton beam in the experiment was derived from 100 MeV proton linear accelerator in the KOMAC. We measured the gamma ray intensity ratio of the decay level from the energy spectrum. The previous results have been compared with the current result. Strength of measured gamma rays will provide very important information though decide high energy gamma radiation detection efficiency.

• Advanced Composite Materials
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• v.18 no.4
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• pp.351-364
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• 2009

The thermal stability and elevated temperature mechanical properties of $SiC_P$/Al-11.7Fe-1.3V-1.7Si (Al-11.7Fe-1.3V-1.7Si reinforced with SiC particulates) composites sheets prepared by spray deposition (SD) $\rightarrow$ hot pressing $\rightarrow$ rolling process were investigated. The experimental results showed that the composite possessed high ${\sigma}_b$ (elevated temperature tensile strength), for instance, ${\sigma}_b$ was 315.8 MPa, which was tested at $315^{\circ}C$, meanwhile the figure was 232.6 MPa tested at $400^{\circ}C$, and the elongations were 2.5% and 1.4%, respectively. Furthermore, the composite sheets exhibited excellent thermal stability: the hardness showed no significant decline after annealing at $550^{\circ}C$ for 200 h or at $600^{\circ}C$ for 10 h. The good elevated temperature mechanical properties and excellent thermal stability should mainly be attributed to the formation of spherical ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase particulates in the aluminum matrix. Furthermore, the addition of SiC particles into the alloy is another important factor, which the following properties are responsible for. The resultant Si of the reaction between Al matrix and SiC particles diffused into Al matrix can stabilize ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase; in addition, the interface (Si layer) improved the wettability of Al/$SiC_P$, hence, elevated the bonding between them. Furthermore, the fine $Al_4C_3$ phase also strengthened the matrix as a dispersion-strengthened phase. Meanwhile, load is transferred from Al matrix to SiC particles, which increased the cooling rate of the melt droplets and improved the solution strengthening and dispersion strengthening.

• Food Science of Animal Resources
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• v.38 no.6
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• pp.1246-1252
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• 2018

This study was conducted to investigate the effects of the addition levels of a phosphate replacer blend in ground pork sausages. The phosphate replacer consisted of 0.2% oyster shell calcium powder, 0.3% egg shell calcium powder, and 0.25% whey protein concentrate. Depending on the presence or absence of synthetic phosphate and the addition level of phosphate replacer, the following products were processed: control (+) (0.3% phosphate), control (-) (non-phosphate), 20AL (20% replacer), 40AL (40% replacer), 60AL (60% replacer), 80AL (80% replacer), and 100AL (100% replacer). The pH values of pork sausages increased (p<0.05) with increasing addition level of the phosphate replacer. When more than 40% of the phosphate replacer was added to pork samples (40AL, 60AL, 80AL, and 100AL), cooking loss was significantly reduced compared to both the control (+) and control (-). However, no significant differences were observed in the moisture content and CIE $L^*$ values between the controls and the treatments with a phosphate replacer. The control (+) and 100AL treatment had the highest (p<0.05) hardness, but the samples with the phosphate replacer were not significantly different in cohesiveness and springiness from the control (+). As addition level increased, the gumminess and chewiness of the products with the phosphate replacer increased, which were lower than those of the control (+). Therefore, more than 40% of a phosphate replacer may possibly substitute synthetic phosphate to improve product yields in ground pork sausages, although further studies may be needed for improving the textural properties of the final products.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.50-53
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• 1994

In this study. we report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, GaInN, AlGaN/GaN double hetero-structure (DH) and AlGaN/GaInN DH which grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate using an AIN buffer-layer. The peak wavelength of the stimulated emission at RT from AlGaN/GaN DH is 370nm and the threshold of excitation pumping power density (P$\_$th/) is about 89㎾/$\textrm{cm}^2$, and they from AlGaN/GaInN DH are 403nm and 130㎾/$\textrm{cm}^2$, respectively. The P$\_$th/ of AlGaN/GaN and AlGaN/GaInN DHs are lower than the bulk materials due to optical confinement within the active layers of GaN and GaInN. The optical gain and the polarization of stimulated emission characteristics are presented in this article.