• Journal of the Korean Society for Heat Treatment
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• v.21 no.1
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• pp.3-9
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• 2008

Al-Co-N thin films, Al-Co-N/Al-N and Al-Co-N/Al-Co multilayers containing various amounts of Co content were deposited by using a two-facing targets type dc sputtering (TFTS) system. The films were also annealed successively and isothermally at different annealing temperatures. Irrespective of Co content and preparation methods, all the as-deposited films were observed non-magnetized. It was found that annealing conditions can control the magnetic and electrical properties as well as the microstructure of the films.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.558-563
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• 2008

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

• Korean Journal of Metals and Materials
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• v.50 no.3
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• pp.248-255
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• 2012

AlN thin films containing various amounts of Co, AlN-Co, and Al-Co alloy particles were prepared using a two-facing-target type dc reactive sputtering (TFTS) system. The as-deposited films exhibited the variable nature expected from an AlN-rich phase, and an amorphous-like phase, depending on the Co content in the films. Specific favorable microstructures were prepared by optimizing annealing conditions. Those microstructures and their magnetic properties and resistivity were investigated. As-deposited films showed very small saturation magnetization and an amorphous-like structure. However, when annealed, the as-deposited amorphous-like phase decomposes into phases of AlN, Co and Al-Co. These annealing induced changes in the microstructure improve the magnetization and resistivity of the films. Further improvement of soft magnetic properties could lead to the material being used for high density magnetic recording head material.

• Journal of the Korean institute of surface engineering
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• v.35 no.6
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• pp.408-414
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• 2002

TiN and TiAlN coating layer were deposited on WC-Co steel substrates by an arc ion plating(AIP) technique. The crystallinity and morphology for the deposited coating layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The impact behaviors of the deposited TiN and TiAlN coating layer were investigated with a ball-on-plate impact tester. Beyond $10^2$ impact cycle, TiAlN coating layer showed superior impact wear resistance compared to TiN coating layer. On the other hand, both TiN and TiAlN coating layers started to be partially failed between $10^2$ and $10^3$ impact cycle. Above $10^3$ impact cycle, TiN and TiAlN coating layers showed similar impact behavior because of the substrate effect.

• Journal of the Korean Institute of Gas
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• v.20 no.2
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• pp.1-9
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• 2016

Combined removal of n-heptane and carbon monoxide (CO) using a plasma-catalytic process was investigated. The performance of the plasma-catalytic process was compared with that of the catalyst-alone process to characterize the decomposition of n-heptane and CO with the operation parameters such as the type of catalyst, reaction temperature, and discharge power. From several sets of experiments, it was found that the decomposition efficiency of n-heptane mainly depended on the specific input energy rather than the reactor temperature, whereas the oxidation of CO on both the energy density and the reaction temperature. The results conducted over several metal oxide catalysts exhibited that the decomposition efficiency of n-heptane was in the order: $Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3{\approx}Ag/{\gamma}-Al_2O_3$. Especially, $Pd/{\gamma}-Al_2O_3$ catalyst did hardly generate CO as a byproduct during the decomposition of n-heptane under an appropriate condition, revealing $CO_2$ selectivity of nearly 100%. The CO oxidation efficiency was largely affected by the type of catalyst ($Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$). At temperatures below $180^{\circ}C$, the plasma-catalytic process was more effective in the oxidation of CO, while above $180^{\circ}C$, the catalytic process resulted in slightly higher CO oxidation efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.711-714
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• 2015

In this paper, high quality AlN layers were regrown on AlN nanopillar structure with $SiO_2$-dots by HVPE. Surface morphology of AlN layer regrown exhibited flatter than a conventional AlN template. The laterally overgrown AlN regions would consist of a continuous well coalesced layer with lower dislocation density than in the template because of the dislocation blocking and dislocation bending effects. Moreover, result of Raman spectroscopy suggest that the AlN nanopillar structure with $SiO_2$-dots relieves the strain in the AlN layer regrown by HVPE.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.21-21
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• 2003

Microstructure and magnetic transport phenomina in rf sputtered AlN/Co type ten-layered discontinuous films of nanoscaled [AlN (3 nm)/Co (t nm)]...$\sub$10/ with t$\sub$Co/=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer. Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1,2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AlN matrix, and the films showed the superparamagnetic behavior with a high MR value of Δ$\rho$/$\rho$$\sub$0/=1.8 %. As t$\sub$Co/ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. Tunneling barrier called "decay length for tunneling" for the films having the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$\^$-1/.

• Journal of the Korean institute of surface engineering
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• v.57 no.1
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• pp.14-21
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• 2024

For this study, CrAlN multilayer coatings were deposited on SKD61 substrates using a multi-arc ion plating technique. The structural characteristics of the CrAlN multilayer coatings were evaluated using X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). Additionally, the adhesion of the coatings was assessed through scratch testing, and the mechanical strength was evaluated using nanoindentation and tribometric tests for frictional properties. The results show that the CrAlN multilayer coatings possess a uniform and dense structure with excellent mechanical strength. Hardness measurements indicated that the CrAlN coatings have high hardness values, and both the coating adhesion and wear resistance were found to be improved compared to CrN. The addition of aluminum is anticipated to contribute to enhanced durability and wear resistance.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.6
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• pp.331-337
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• 2010

Aluminum nitride (AlN) thin films containing various amounts of Co content have been deposited by using a two-facing targets type sputtering (TFTS) system. The deposited films were also annealed successively and isothermally at different temperatures. Annealing treatment can control the physical properties as well as the microstructure of AlN films with Co particles. High magnetization and high resistivity are obtainable in AlN films containing dispersed Co particles. The coercivity of the films does not depend on annealing time, but it increases with increasing annealing temperature due to the increase of the grain size. A high saturation magnetization of 46 kG and resistivity of 2200 ${\mu}{\Omega}$-cm was obtained for AlN films containing 25 at% Co.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.1
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• pp.16-22
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• 2011

Al-Co/AlN-Co multilayer films with different layer thicknesses were prepared by using a two-facing target type D.C sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. The magnetization of as-deposited films is very small irrespective of layer thickness. It was found that annealing conditions and layer thickness ratio (LTR) of Al-Co to AlN-Co can control the microstructure as well as the physical properties of the prepared films. The resistivity and magnetization increase and the coercivity decreases with decreasing LTR. High resistivity and sufficient magnetization were obtained for the films with LTR = 0.35. Films having such considerable magnetization and resistivity will be a potential candidate to be used for a high density recording material.