• 제목/요약/키워드: Al-3

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Synthesis of NiO-doped Al2O3 Powder by Spray Pyrolysis (분무열분해법에 의한 NiO 첨가 Al2O3 분체의 합성)

  • 박정현;조경식;김한태
    • Journal of the Korean Ceramic Society
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    • v.28 no.8
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    • pp.593-602
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    • 1991
  • Al2O3 and NiO-doped Al2O3 powders were prepared from the ethanol solution of Al (NO3)3$.$9H2O and Ni(NO3)2$.$6H2O by spray pylolysis method using two-fluid nozzle. As a result of spraying test with 0.3 mol/{{{{ iota }} concentration starting solution, mean droplet sizes varied with 8.99∼9.69$\mu\textrm{m}$ and those standard deviation were 4.57∼5.12. As-prepared powders which were synthesized at 1000$^{\circ}C$ have spherical shape, sizes of 0.1∼3.0$\mu\textrm{m}$ and specific surface area of 22.34∼24.20㎡/g. Most powders consisted of {{{{ gamma }}-Al2O3 phase and transforned into ${\alpha}$-A;2O3 phase by calcination at 1100$^{\circ}C$ for 1 hr. NiO-doped Al2O3 sintered bodies had better sinterability than those of pure Al2O3 and 0.3 wt% NiO-doped Al2O3 had near theoretical density and dense microstructure.

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A Study on the Thermal Stability of an Al2O3/SiON Stack Structure for c-Si Solar Cell Passivation Application (결정질 실리콘 태양전지의 패시베이션 적용을 위한 Al2O3/SiON 적층구조의 열적 안정성에 대한 연구)

  • Cho, Kuk-Hyun;Chang, Hyo Sik
    • Journal of the Korean Ceramic Society
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    • v.51 no.3
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    • pp.197-200
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    • 2014
  • We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

Decomposition Characteristics of CF4 by SiC/Al2O3 Modified with Cerium Sulfate Using Microwave System (마이크로파를 이용한 황산세륨으로 개질화 된 SiC/Al2O3 촉매의 CF4 분해 특성)

  • Choi, Sung-Woo
    • Journal of Korean Society of Environmental Engineers
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    • v.37 no.12
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    • pp.668-673
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    • 2015
  • Alumina-based catalysts with different Ce loadings were studied in the decomposition of $CF_4$ using microwave heating system. Heating material of microwave system used Silicon Carbide. The crystallographic phases of catalysts were investigated by XRD and decomposition rates of $CF_4$ were examined by GC-TCD. The catalysts of 10 wt% Ce modified $Al_2O_3$ showed higher $CF_4$ decomposition rate than un-modified $Al_2O_3$ for $500^{\circ}C$ reaction temperature. The k value of catalysts shows the order of $Ce(20)/Al_2O_3=Ce(0)/Al_2O_3<Ce(5)/Al_2O_3<Ce(10)/Al_2O_3$. XRD patterns of $Ce(0)/Al_2O_3$ were no difference before and after the reaction and showed $Al_2O_3$ phases. With the increase in Ce loadings, $CeO_2$, $AlF_3$ of XRD peaks was observed. The results was indicated that Ce modifed $Al_2O_3$ than un-modifed $Al_2O_3$ was decreased reaction temperature to $200^{\circ}C$ with same decomposition rate. Also the appropriated cerium sulfate loadings on $Al_2O_3$ were 5~10 wt%.

Antioxidative Effect of Aster yomena (Kitm.) Extract on C6 Glioma Cell Line Damaged by AlCl3, Dementia Inducer (치매유발물질인 염화알루미늄으로 손상된 C6 신경교종 세포주에서의 항산화 효과)

  • Seo, Young-Mi
    • Korean Journal of Clinical Laboratory Science
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    • v.52 no.4
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    • pp.408-416
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    • 2020
  • This study examined the neuronal cytotoxicity of aluminum chloride (AlCl3), a dementia inducer, and the protective effects of Aster yomena (Kitam.)(AY) extract on AlCl3-induced cytotoxicity in cultured C6 glioma cells. The antioxidative effects, such as the inhibitory ability of xanthine oxidase (XO) and superoxide anion-radical (SAR) scavenging ability, on cell viability were examined. AlCl3 decreased the cell viability significantly in a dose-dependent manner, and the XTT50 value was 130.0 μM in these cultures. The cytotoxicity of AlCl3 was determined to be mid-toxic according to the Borenfreund and Puerner' toxic criteria. Quercetin (QU), an antioxidant, increased the cell viability reduced by AlCl3-induced cytotoxicity. The protective effect of the AY extract on AlCl3-induced cytotoxicity was analyzed. The AY extract increased the cell viability remarkably compared to the AlCl3-treated group and showed the inhibitory ability of XO and SAR-scavenging ability. The cytotoxicity of AlCl3 was correlated with oxidative stress, and the AY extract effectively prevented AlCl3-induced cytotoxicity through its antioxidative effects. In conclusion, natural resources, such as the AY extract, may be a putative agent for improving the cytotoxicity of heavy metallic compounds correlated with oxidative stress, such as AlCl3, a morbid agent.

Microwave Thermal Decomposition of CF4 using SiC-Al2O3 (SiC-Al2O3 촉매를 이용한 CF4의 마이크로파 열분해)

  • Choi, Sung-Woo
    • Journal of Environmental Science International
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    • v.22 no.9
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    • pp.1097-1103
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    • 2013
  • Tetrafluoromethane($CF_4$) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. $CF_4$ decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of $Al_2O_3$ addition. High reaction temperature and addition of $Al_2O_3$ increased the $CF_4$ removal efficiencies and the $CO_2/CF_4$ ratio. When the SA30 (SiC+30wt%$Al_2O_3$) and SA50 (SiC+50wt%$Al_2O_3$) were used, complete $CF_4$ removal was achieved at $1000^{\circ}C$. The $CF_4$ was reacted with $Al_2O_3$ and by-products such as $CO_2/CF_4$ and $AlF_3$ were produced. Significant amount of by-product such as $AlF_3$ was identified by X-ray powder diffraction analysis. It also showed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ after microwave thermal reaction.

Corrosion Characteristics of $Al_3Ti-Cr$ Intermetallics (금속간 화합물 $Al_3Ti-Cr$의 부식특성)

  • Yu, Yong-Jae;Kim, Seong-Hun;Choe, Yun-Je;Kim, Jeong-Gu;Lee, Dong-Bok
    • Korean Journal of Materials Research
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    • v.10 no.6
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    • pp.398-402
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    • 2000
  • Three kinds of $Al_3Ti-Cr$ alloys, namely, $Al_{67}Ti_{25}Cr_8,\;Al_{66}Ti_{24}Cr_{10}\;and\;Al_{59}Ti_{26}Cr_{15}$, were prepared by induction melting followed by the thermomechanical treatment. The corrosion behavior in 3.5% NaCl solution and the high-temperature oxidation behavior at 1000, 1100 and $1200^{\circ}C$ for the prepared alloys were investigated. Electrochemical results indicated increased resistance to localized corrosion with increasing Cr content. Cr additions were found to prevent passive film from undergoing brittle fracture. XPS results revealed the passive films of $Al_3Ti-Cr$ alloys were composed mainly of $Al_2O_3$ that coexisted with $TiO_2$ and $Cr_2O_3$. The overall oxidation resistance of the prepared alloys were excellent. Specifically, the oxidation resistance increased in the order of $Al_{59}Ti_{26}Cr_{15},\;Al_{66}Ti_{24}Cr_{10}\;and\;Al_{67}Ti_{25}Cr_8$. As the Al content in the base alloys increased, the $Al_2O_3$ formation was facilitated leading to the increased oxidation resistance.

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Fabrication of$Al_2O_3/Fe$ composite by reaction sintering (반응소결법에 의한 $Al_2O_3/Fe$ 복합재료 제조)

  • 김송희;윤여범
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.2
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    • pp.185-190
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    • 1999
  • An $Al_2O_3/Fe$ composite was synthesized through the double stage processes by a reaction sintering which requires simple process and equipments but provides near-net-shape, a reduction/oxidation process for 5 hrs at $650^{\circ}C$ was followed by sintering at $1200^{\circ}C$ to form an $Al_2O_3/Fe$ composite. The composite processed through the double stage sintering are mainly consists of $\alpha$-Fe and ${\alpha}Al_2O_3$ with minor amount of $FeAl_2O_4$, a spinnel structure which is known to prevent Fe from filling up the pores and good contact with $Al_2O_3/Fe$ particles.

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SULFIDATION PROCESSING AND Cr ADDITION TO IMPROVE OXIDATION RESISTANCE OF Ti-Al INTERMETALLIC COMPOUNDS AT ELEVATED TEMPERATURES

  • Narita, Toshio;Izumi, Takeshi;Yatagai, Mamoru;Yoshioka, Takayuki
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 1999.05a
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    • pp.5-5
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    • 1999
  • A novel process is proposed to improve oxidation resistance of Ti-Al intermetallic compounds at elevated temperatures by both Cr addition and pre-sulfidation, where TiAl alloys withlor without Cr addition were sulfidized at 1173K for 86.4ks at a 1.3 Pa sulfur partial pressure in a $H_2-H_2S$ gas mixture. The pre-sulfidation treatment formed a thin Cr-Al alloy layer as well as 7~10 micrometer $TiAl_3$ and $TiAl_2$ layer, due to selective sulfidation of Ti. Oxidation resistance of the pre-sulfidation processed TiAl 4Cr alloy was examined under isothermal and heat cycle conditions between room temperature and 1173K in air. Changes in $TiAl_3$ into $TiAl_2$ and then TiAl phases as well as their effect on oxidation behavior were investigated and compared with the oxidation behavior of the TiAl-4Cr alloy as TiAl and pre-sulfidation processed TiAl aHoys. After oxidation for up to 2.7Ms a protective $Al_2O_3$ scale was formed, and the pre-formed $TiAl_3$ changed into $TiAl_2$ and the $Al_2Cr$ phase changed into a CrAlTi phase between the $Al_2O_3$ scale and $TiAl_2$ layer. The pre-sulfidation processed TiAl-4Cr alloy had very good oxidation resistance for longer times, up to 2.7 Ms, in contrast to those observed for the pre-sulfidation processed TiAl alloy where localized oxidation occurred after 81 Oks and both the TiAl and TiAl-4Cr alloys themselves corroded rapidly from the initial stage of oxidation

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Dechlorination of HCFC-142b over Supported Pd Catalysts and Solid Acid Catalysts (Pd담지촉매와 고체산촉매를 이용한 HCFC-142b의 탈염소반응)

  • Han, K.Y.;Seo, K.W.;Mok, Y.I.;Park, K.Y.;Ahn, B.S.
    • Applied Chemistry for Engineering
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    • v.9 no.3
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    • pp.372-376
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    • 1998
  • Supported Pd($Pd/AlF_3$, $Pd/{\gamma}-Al_2O_3$) catalysts and solid-acid catalysts(${\gamma}-Al_2O_3$, ${\alpha}-Al_2O_3$, $AlF_3$) were used to perform dechlorination of HCFC-142b(1-chloro-1,1-difluoroethane) in the presence of excess hydrogen. In the reactions the effects of reaction temperature, the mole ratio(r) of $H_2$ to HCFC-142b and the amount of supported Pd on dechlorination of HCFC-142b into HFC-143a(1,1,1-trifluoroethane) or HFC-152a(1,1-difluoroethane) were investigated. The experimental results showed that the conversion of HCFC-142b to product gases were 60% and 92%, respectively, and the selectivity to HFC-143a in the product gases were 58% and 64% for $Pd/AlF_3$ and $Pd/{\gamma}-Al_2O_3$ catalysts, respectively. On these catalysts an optimum reaction condition was found at $200^{\circ}C$ with the space time of reactant gases as 1.05 second and the mole ratio of $H_2$ to HCFC-142b as 3. Solid-acid catalysts were also tested at the same reaction condition. The results showed that the conversions of HCFC-142b to product gases were 12%, 8% and 7%, and the selectivities to HFC-152a were 94%, 92% and 90% for ${\gamma}-Al_2O_3$, ${\alpha}-Al_2O_3$ and $AlF_3$ catalysts, respectively.

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Interface Reactions and Diffusion of Si3N4/Ti and Si3N4/TiAl Alloys (Si3N4/Ti와 Si3N4/TiAl합금의 계면반응 및 확산 거동)

  • Choi, Kwang Su;Kim, Sun Jin;Lee, Ji Eun;Park, Joon Sik;Lee, Jong Won
    • Korean Journal of Materials Research
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    • v.27 no.11
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    • pp.603-608
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    • 2017
  • $Si_3N_4$ is a ceramic material attracting attention in many fields because of its excellent abrasion resistance. In addition, Ti and TiAl alloys are metals used in a variety of high temperature environments, and have attracted much attention because of their high strength and high melting points. Therefore, study of the interface reaction between $Si_3N_4/Ti$ and $Si_3N_4/TiAl$ can be a useful practice to identify phase selection and diffusion control. In this study, $Si_3N_4/Ti_5Si_3+TiN/TiN/Ti$ diffusing pairs were formed in the $Si_3N_4/Ti$ interfacial reaction and $Si_3N_4/TiN(Al)/Ti_3Al/TiAl$ diffusion pathway was identified in the $Si_3N_4/TiAl$ interfacial reaction. The diffusion layers of the interface reactions were identified and, to investigate the kinetics of the diffusion layer, the integrated diffusion coefficients were estimated.