• Title/Summary/Keyword: Al-1%Si

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Effects of Si Addition on the Microstructure and Properties of Cr-Al alloy for High Temperature Coating (고온 코팅용 Cr-Al합금의 미세조직 및 특성에 미치는 Si 첨가의 영향)

  • Kim, Jeong-Min;Kim, Il-Hyun;Kim, Hyun-Gil
    • Korean Journal of Materials Research
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    • v.29 no.1
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    • pp.7-10
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    • 2019
  • Cr-Al alloys are attracting attention as oxidation resistant coating materials for high temperature metallic materials due to their excellent high temperature stability. However, the mechanical properties and oxidation resistance of Cr-Al alloys can be further enhanced, and such attempts are made in this study. To improve the properties of Cr-Al alloys, Si is added up to 5 wt%. Casting specimens with different amounts of Si content are prepared by a vacuum arc remelting method and isothermally heated under steam conditions at $1,100^{\circ}C$ for 1 hour. The as-cast microstructure of low Si alloys is mainly composed of only a Cr phase, while $Al_8Cr_5$ and $Cr_3Si$ phases are also observed in the 5 % Si alloy. In the high Si alloy, only Cr and $Cr_3Si$ phases remain after the isothermal heating at $1,100^{\circ}C$. It is found that Si additions slightly decrease the oxidation resistance of the Cr-Al alloy. However, the microhardness of the Cr-Al alloy is observed to increase with an increasing Si content.

Analysis of the K Gettering in SiO2/PSG/SiO2/Al-1%Si Multilevel Thin Films using SIMS (SIMS를 이용한 SiO2/PSG/SiO2/Al-1%Si 적층 박막내의 K 게터링 분석)

  • Kim, Jin Young
    • Journal of the Korean institute of surface engineering
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    • v.50 no.3
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    • pp.219-224
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    • 2017
  • The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

FE-simulation of Drawing Process for Al-1%Si Bonding Wire Considering Fine Si Particle (미세 Si 입자를 고려한 Al-1%Si 본딩 와이어의 신선공정해석)

  • Ko, D.C.;Hwang, W.H.;Lee, S.K.;Kim, B.M.
    • Transactions of Materials Processing
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    • v.15 no.6 s.87
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    • pp.421-427
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    • 2006
  • Drawing process of Al-1%Si bonding wire considering fine Si particle is analyzed in this study using FE-simulation. Al-1%Si boding wire requires electric conductivity because Al-1%Si bonding wire is used for interconnection in semiconductor device. About 1% of Si is added to Al wire for dispersion-strengthening. Distribution and shape of fine Si particle have strongly influence on the wire drawing process. In this study, therefore, the finite-element model based on the observation of wire by continuous casting is used to analyze the effect of various parameters, such as the reduction in area, the semi-die angle, the aspect ratio, the inter-particle spacing and orientation angle of the fine Si particle on wire drawing processes. The effect of each parameter on the wire drawing process is investigated from the aspect of ductility and defects of wire. From the results of the analysis, it is possible to obtain the important basic data which can be guaranteed in the fracture prevention of Al-1 %Si wire.

A Comparative Study on Characteristics of Cutting Tool Materials Based on SiAlON Ceramics (SiAlON계 절삭공구 소재의 특성 비교)

  • Kim, Seongwon;Choi, Jae-Hyung
    • Journal of Powder Materials
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    • v.28 no.6
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    • pp.502-508
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    • 2021
  • SiAlON-based ceramics are a type of oxynitride ceramics, which can be used as cutting tools for heat-resistant super alloys (HRSAs). These ceramics are derived from Si3N4 ceramics. SiAlON can be densified using gas-pressure reactive sintering from mixtures of oxides and nitrides. In this study, we prepare an α-/β-SiAlON ceramic composite with a composition of Yb0.03Y0.10Si10.6Al1.4O1.0N15.0. The structure and mechanical/thermal properties of the densified SiAlON specimen are characterized and compared with those of a commercial SiAlON cutting tool. By observing the crystallographic structures and microstructures, the constituent phases of each SiAlON ceramic, such as α-SiAlON, β-SiAlON, and intergranular phases, are identified. By evaluating the mechanical and thermal properties, the contribution of the constituent phases to these properties is discussed as well.

The Thermal Stability and Elevated Temperature Mechanical Properties of Spray-Deposited $SiC_P$/Al-11.7Fe-1.3V-1.7Si Composite

  • Hao, L.;He, Y.Q.;Wang, Na;Chen, Z.H.;Chen, Z.G.;Yan, H.G.;Xu, Z.K.
    • Advanced Composite Materials
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    • v.18 no.4
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    • pp.351-364
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    • 2009
  • The thermal stability and elevated temperature mechanical properties of $SiC_P$/Al-11.7Fe-1.3V-1.7Si (Al-11.7Fe-1.3V-1.7Si reinforced with SiC particulates) composites sheets prepared by spray deposition (SD) $\rightarrow$ hot pressing $\rightarrow$ rolling process were investigated. The experimental results showed that the composite possessed high ${\sigma}_b$ (elevated temperature tensile strength), for instance, ${\sigma}_b$ was 315.8 MPa, which was tested at $315^{\circ}C$, meanwhile the figure was 232.6 MPa tested at $400^{\circ}C$, and the elongations were 2.5% and 1.4%, respectively. Furthermore, the composite sheets exhibited excellent thermal stability: the hardness showed no significant decline after annealing at $550^{\circ}C$ for 200 h or at $600^{\circ}C$ for 10 h. The good elevated temperature mechanical properties and excellent thermal stability should mainly be attributed to the formation of spherical ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase particulates in the aluminum matrix. Furthermore, the addition of SiC particles into the alloy is another important factor, which the following properties are responsible for. The resultant Si of the reaction between Al matrix and SiC particles diffused into Al matrix can stabilize ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase; in addition, the interface (Si layer) improved the wettability of Al/$SiC_P$, hence, elevated the bonding between them. Furthermore, the fine $Al_4C_3$ phase also strengthened the matrix as a dispersion-strengthened phase. Meanwhile, load is transferred from Al matrix to SiC particles, which increased the cooling rate of the melt droplets and improved the solution strengthening and dispersion strengthening.

Influence of Solidification Condition on the Segregation of SiC Particles in the Al-Si/$SiC_p$ Composites (Al-Si/$SiC_p$ 복합재료에서 SiC의 편석에 미치는 응고 조건의 영향)

  • Kim, Jong-Chan;Kwon, Hyuk-Moo
    • Journal of Korea Foundry Society
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    • v.17 no.2
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    • pp.180-187
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    • 1997
  • The influence of solidification condition on the segregation of SiC particles in the $Al-xSi/6wt%SiC_p$(x: 6, 10, 14, 18${\cdot}$wt%) composites was investigated in the study. The results are as follows: 1) During the counter-gravity unidirectional solidification of $Al-Si/SiC_p$ composites melt, most of the SiC particles are pushed to the top of the casting. 2) The SiC particles pushing in the $Al-Si/SiC_p$ composite melts are not observed, when the interface velocity of melts increases more than 1.41 ${\mu}m/sec$. 3) The SiC particles are entrapped in the interdendrite regions, when the sizes of SiC particles in the $Al-Si/SiC_p$ composites are large than ${\varphi}22{\mu}m$.

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Electromigration Characteristics in Al-1%Si hin Film Interconnections for Microelectronic Devices (극소전자 디바이스를 위한 Al-1%Si 박막배선에서의 electromigration 특성)

  • 박영식;김진영
    • Proceedings of the Korean Vacuum Society Conference
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    • 1995.06a
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    • pp.48-49
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    • 1995
  • 전자소자의 축소화에 따라 electromigration은 점차 반도체 디바이스의 주요 결함 원 인으로 부각되고 있다. 본 실험은 현재 배선 재료로 널리 사용되고 있는 Al-1%Si 금속박막 배선의 electromigration에 대한 온도 및 배선길이 의존성에 관하여 연구하였다. ppLCC(pplastic Leaded Chipp Carrier) ppackage된 ppSG(8000$\AA$)/SiO2(1000$\AA$)/Al-1%Si(7000 $\AA$)/SiO2(5000$\AA$)/pp-typpe Si(100)의 보호막처리된 시편과 Al-1%Si/SiO2(5000$\AA$)/pp-typpe Si(100)의 보호막처리되지 않은 시편등을 standard pphotolithograpphy 공정을 이용하여 각각 제작하였다. 선폭 3$mu extrm{m}$, 길이 100, 400, 800, 1600$\mu\textrm{m}$의 등의 Al-1%Si 박막배선구조를 사용하 였다. 가속화실험을 위해 인가된 D.C 전류밀도는 4.5$\times$106A/cm2이었고 실온에서 10$0^{\circ}C$까지 의 분위기 온도에서 electromigration를 실행하였다. 박막배선길이에 따른 MTF(Mean Time-to-Failure)는 임계길이 이상에서 포화되는 경향을 보이며 임계길이는 Al-1%Si 박막 배선에서 분위기온도에 따라 길이 400$\mu\textrm{m}$과 800$\mu\textrm{m}$범위에서 나타났다. 각 시편에서 electromigration에 대한 활성화에너지도 MTF의 특성과 유사하게 임계길이 이상에서 포화 되는 특성을 타나내었다.

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Thermostability of Monolithic and Reinforced Al-Fe-V-Si Materials

  • He, Yiqiang;Qiao, Bin;Wang, Na;Yang, Jianming;Xu, Zhengkun;Chen, Zhenhua;Chen, Zhigang
    • Advanced Composite Materials
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    • v.18 no.4
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    • pp.339-350
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    • 2009
  • Al-Fe-V-Si alloys reinforced with SiC particles were prepared by multi-layer spray deposition technique. Both microstructures and mechanical properties including hardness and tensile properties development during hot exposure process of Al-8.5Fe-1.3V-1.7Si, Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$ and Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ were investigated. The experimental results showed that an amorphous interface of about 3 nm in thickness formed between SiC particles and the matrix. SiC particles injected silicon into the matrix; thus an elevated silicon concentration was found around $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids, which subsequently inhibited the coarsening and decomposition of $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids and enhanced the thermostability of the alloy matrix. Moreover, the thermostability of microstructure and mechanical properties of Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ are of higher quality than those of Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$.

Fabrication of $Al_2O_3/SiC$ Composite Through Oxidation of SiC (SiC의 산화에 의한 $Al_2O_3/SiC$ 복합체의 제조)

  • 김경환;이홍림;이형민;홍기곤
    • Journal of the Korean Ceramic Society
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    • v.34 no.5
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    • pp.535-543
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    • 1997
  • The surface of SiC particles were partially oxidized to produce SiO2 layers on the SiC particles to prepare Al2O3/SiC composite by formation of mullite bonds between the grains of Al2O3 and SiC during sintering at 1$600^{\circ}C$. This process is considered to enable the sintering of Al2O3/SiC composite at lower temperature and also to relieve the stress, produced by thermal expansion mismatch between Al2O3 and SiC. In fact, Al2O3/SiC composite prepared by oxidation of SiC was observed to be more effectively sintered and densified at lower temperature. Maximum density, flexural strength and microhardness were obtained with 5.65 vol% of mullite content in Al2O3/SiC composite.

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