• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.345.2-345.2
• /
• 2016

Alumina (Al2O3) doped zinc oxide (ZnO) films (AZO) have been prepared from 2 wt.% Al2O3 doped ZnO target by DC magnetron sputtering at a 2 mTorr (0.27 Pa) chamber pressure in (15 sccm) argon ambient. We obtained films of various opto-electronic properties by variation of target angle from 32.5o to 72.5o. At lower target angle deposited films show higher values in optical gap, mobility of charge carrier, carrier concentration, crystallite grain size, transmission range of wavelength, which are favorable characteristics of AZO as a transparent conducting oxide (TCO). At higher target angle the sheet resistance, work function, surface roughness for the AZO films increases. Measured haze ratio of the films changed lower to higher and size of characteristic surface structure of as deposited film ranges from ~40 nm to ~300 nm. By a combination of low and high target angle we obtained a textured TCO film with high conductivity.

• Journal of the Korean institute of surface engineering
• /
• v.54 no.5
• /
• pp.285-293
• /
• 2021

High-entropy TiAlCrSiN nano-composite coating was designed to improve mold life for high temperature liquid molding. Alloy design, powder fabrication and single alloying target fabrication for the high-entropy nano-composite coating were carried out. Using the single alloying target, an arc ion plating method was applied to prepare a TiAlCrSiN nano-composite coating had a 30 nm TiAlCrSiN layers are deposited layer by layer, and form about 4 ㎛-thickness of multi-layered coating. TiAlCrSiN nano-composite coating had a high hardness of about 39.9 GPa and a low coefficient of friction of less than about 0.47 in a dry environment. In addition, there was no change in the structure of the coating after the dissolution loss test in the molten metal at a temperature of about 1100 degrees.

• Transactions of Materials Processing
• /
• v.29 no.1
• /
• pp.44-48
• /
• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• Journal of the Korean institute of surface engineering
• /
• v.25 no.5
• /
• pp.235-252
• /
• 1992

(Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40$0^{\circ}C$ in air TiN films quickly were oxidised at $600^{\circ}C$, were spalled more than $700^{\circ}C$. But (Ti, Al)N films are relatively stable to$ 900^{\circ}C$. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.

• Journal of the Korean institute of surface engineering
• /
• v.25 no.5
• /
• pp.223-233
• /
• 1992

(Ti, Al)N films were deposited on 304 stainless steel by D.C. magnetron sputtering using Al target and Ti plate. The properties of (Ti, Al)N films such as composition, microhardness, grain size, crystal structure were investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The higher bias voltage to substrate and the smaller input of N2 gas showedthe increased microhardness and the finer grain size of the films. The results obtained from this study show, it is belived, that the (Ti, Al)N film by D.C.magne-tron sputtering is promising in the wear resistance use.

• Herbal Formula Science
• /
• v.25 no.1
• /
• pp.69-87
• /
• 2017

Objectives : Cheongnoemyeongsin-hwan (CNMSH) is a herb medicine to treat cognitive impairment. This study was investigated the effects of CNMSH on learning and memory impairment induced by cerebral hypoperfusion. Cerebral hypoperfusion was produced chronically by permanent bilateral common carotid artery occlusion (BCCAO) in rats. Methods : CNMSH was administered orally once a day (250 mg/kg) for 28 days starting at 4th week after the BCCAO. The acquisition of learning and the retention of memory were tested on 9th week after the BCCAO using the Morris water maze. In addition, effect of CNMSH on neuronal apoptosis and ${\beta}-amyloid$ accumulation in the hippocmapus was evaluated with immunohistochemistry and Western blotting. Results : 1. CNMSH and ChAL significantly shortened the escape latencies on the 2nd day of acquisition training trials. 2. ChAL significantly prolonged the swimming time spent in the target and peri-target zones and CNMSH also significantly prolonged the swimming time spent in the peri-target zone. 3. CNMSH and ChAL significantly increased the number of target heading in the retention test. 4. ChAL significantly shortened the time of the 1st target heading in the retention test, but CNMSH insignificantly shortened the time of that. 5. CNMSH and ChAL significantly increased the memory score in the retention test. 6. CNMSH and ChAL significantly attenuated the reduction of CA1 neurons, but insignificantly attenuated the reduction of CA1 thickness. 7. CNMSH and ChAL significantly attenuated the up-regulation of Bax expression in the CA1 of hippocampus. 8. CNMSH and ChAL significantly attenuated the up-regulation of cascapse-3 expression in the CA1 of hippocampus. 9. CNMSH and ChAL significantly attenuated the ${\beta}-amyloid$ accumulation in the CA1 of hippocampus. 10. CNMSH and ChAL significantly attenuated the up-regulation of APP expression in the CA1 of hippocampus. 11. CNMSH and ChAL significantly attenuated the up-regulation of BACE-1 expression in the CA1 of hippocampus. Conclusions : The results show that CNMSH attenuates neuronal apoptosis and ${\beta}-amyloid$ accumulation in the hippocampus and alleviates the impairment of learning and memory produced by chronic cerebral hypoperfusion. These results suggest that CNMSH may be a beneficial medicinal herb to treat cognitive impairment associated with neurodegenerative diseases.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.420-423
• /
• 2008

The characteristics of $Al_2O_3/Ag/Al_2O_3$ multilayer passivaton prepared by twin target sputtering (TTS) system for organic light emitting diodes. The $Al_2O_3/Ag/Al_2O_3$ multilayer thin film passivation on a PET substrate had a high transmittance of 86.44 % and low water vapor transmission rate (WVTR) of $0.011\;g/m^2$-day due to the surface plasmon resonance (SPR) effect of Ag interlayer and effective multilayer structure for preventing the intrusion of water vapor. Using synchrotron x-ray scattering and field emission scanning electron microscope (FESEM) examinations, we investigated the growth behavior of Ag layer on the $Al_2O_3$ layer to explain the SPR effect of the Ag layer. This indicates that an $Al_2O_3/Ag/Al_2O_3$ multilayer passivation is a promising thin film passivation scheme for organic based flexible optoelectronics.

• Korean Journal of Materials Research
• /
• v.24 no.7
• /
• pp.344-350
• /
• 2014

Metal films (i.e., Ti, Al and SUH310S) were prepared in a magnetron sputtering apparatus, and their cross-sectional structures were investigated using scanning electron microscopy. The apparatus used consisted of a cylindrical metal target which was electrically grounded, and two anode rings attached to the top and to the bottom of the target. A wire was placed along the center-line of the cylindrical target to provide a substrate. When the electrical potential of the substrate was varied, the metal-film formation rate depended on both the discharge voltage and the electrical potential of the substrate. As we made the magnetic field stronger, the plasma which appeared near the target collected on the plasma wall surface and thereby decreased the bias current. The bias current on the conducting wire was different from that for cation collection. The bias current decreased because the collection of cations decreased when we increased the magnetic-coil current. When the substrate was electrically isolated, the films deposited showed a slightly coarse columnar structure with thin voids between adjacent columns. In contrast, in the case of the grounded substrate, the deposited film did not show any clear columns but instead, showed a densely-packed granular structure. No peeling region was observed between the film and substrate, indicating good adhesion.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1236-1238
• /
• 1994

TiAlN thin films were prepared by a multi target r.f magnetron sputtering system under different conditions. We have investigated the resistivity and T.C.R. (Temperature Coefficient of Resistance) characteristics of TiAlN films deposited on $Al_2O_3$ and glass substrates by sputtering in an $Ar:N_2$ gas mixture. We used Al and Ti metal as Target Material and $Ar:N_2$ gas as working gas. We varied the partial pressure ratio of $N_2/Ar$ from 0.2/7 to 1.0/6.2 (SCCM). And the R.F power of Ti and Al Target also were varied as 160/240, 200/200 and 240/160(W). In this experiment, we can get the precision thin film resistor with a very low T.C.R. (Temperature Coefficient of Resistance) below 25 ppm ${\Omega}/^{\circ}C$.

• Journal of the Korean Vacuum Society
• /
• v.19 no.1
• /
• pp.58-65
• /
• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.