• 청정기술
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• 제28권2호
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• pp.154-162
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• 2022

알루미늄 (Al) 금속을 전구체 및 구조체로 이용, 수열 반응을 통하여 Al@Al₂O₃와 Al@Ni-Al LDH (LDH = layered double hydroxide) 코어-쉘 복합 구조체를 합성하였다. 제조된 구조체의 형상, 조성, 결정 구조는 수용액에 존재하는 이온들에 의하여 크게 영향을 받았으며, 이를 활용하여 다양한 특성의 촉매 구조체 유도가 가능하였다. Al@Ni-Al LDH 코어-쉘 구조체의 환원을 통하여 Ni 나노 입자가 고정화된 Ni/Al@Al₂O₃ 촉매를 제조하였고, CO₂ 메탄화 반응에 적용하여 촉매의 특성을 평가하였다. Ni/Al@Al₂O₃ 촉매는 전통적 incipient wetness impregnation 방법에 의하여 제조된 Ni/Al₂O₃ 촉매에 비교하여 Ni 입자의 분산도와 균일성이 매우 높았으며 약 2 배 이상의 CO₂ 전환율로 높은 촉매적 활성과 더불어 구조의 안정성을 보여 주었다. 이러한 Ni/Al@Al₂O₃ 구조체 촉매의 우수한 특성은 Al 금속을 기반으로 한 새로운 개념의 촉매 구조체 설계와 합성 방법의 타당성을 보여준다.

• 열처리공학회지
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• 제20권5호
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• pp.231-236
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• 2007

High velocity oxy-fuel (HVOF) spraying was used to coat Ti(Al,O)/$Al_2O_3$ powder onto the SS41 steel plate. Macrostructure of the coated specimen has been investigated by scanning electron micrograph (SEM). High temperature oxidation behavior of the coated specimen and SS41 steel have been studied. From the results of SEM observation, Ti(Al,O)/$Al_2O_3$ powder was coated well onto the substrate SS41 steel. Porosity onto the coated layer was only 0.38%. The oxidation results showed that Ti(Al,O)/$Al_2O_3$ powder coated SS41 steel have improved little oxidation resistance at $900^{\circ}C$ in air, but improved remarkably oxidation resistance at $800^{\circ}C $ in air compare to the substrate SS41 steel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.101-104
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• 2004

In this study AlN/Al thin films were prepared at various conditions, such as $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AlN/Al thin films as function of Al electrode surface roughfness. The optimal processing conditions for Al electrode were found at substrate temperature of $300^{\circ}C$, sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AlN/Al/SiO_2/Si$ thin film about 4 degree.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.151-154
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• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

• 한국재료학회지
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• 제27권3호
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• pp.161-165
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• 2017

In this paper, synthesis of terephthalate intercalated Zn-Al: Layered double hydroxides (LDHs) was studied. We designed freestanding Zn-Al: carbonate LDH nanosheets for a facile exchange technique. The as-prepared Zn-Al carbonate LDHs were converted to terephthalate intercalated Zn-Al:LDHs by ion exchange method. Initially, Al-doped ZnO (AZO) thin films were deposited on p-Si (001) by facing target sputtering. For synthesis of free standing carbonate Zn-Al:LDH, we dipped the AZO thin film in naturally carbonated water for 3 hours. Further, Zn-Al: carbonate LDH nanosheets were immersed in terepthalic acid (TA) solution. The ion exchange phenomena in the terephthalate assisted Zn-Al:LDH were confirmed using FT-IR analysis. The crystal structure of terephthalate intercalated Zn-Al:LDH was investigated by XRD pattern analysis with different mole concentrations of TA solution and reaction times. The optimal conditions for intercalation of terephthalate from carbonated Zn-Al LDH were established using 0.3 M aqueous solution of TA for 24 hours.

• 한국재료학회지
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• 제9권1호
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• pp.25-29
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• 1999

We have developed a laser molecular beam epitaxy system for the layer-by-layer growth of oxide thin films. Using this system, we could grow and control oxide thin films of LaAlO$_3$in a molecular layer epitaxy mode on the atomically flat SrTiO$_3$ substrate with a LaAlO$_3$single crystal target. Very clear RHEED oscillations were observed during to growth of a LaAlO$_3$ film for a long period under the optimized conditions of substrate temperature at $650^{\circ}C$, oxygen pressure at 1$\times$10\ulcorner torr, and an incident laser fluence of 4.6J/$\textrm{cm}^2$. The height of mono-layer-LaAlO$_3$ film grown during one period of RHEED intensity oscillation was 3.8$\AA$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1402-1404
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• 2001

Josephson junction arrays of the type $Nb/Al-Al_2O_3/Nb$ were prepared by DC magnetron sputtering. The tunnel barrier was formed by in-situ thermal oxidation. Individual junctions were defined using selective niobium etching process(SNEP). The characteristic curves of Josephson junction arrays fabricated with and without cooling the substrate were represented. The junctions deposited without cooling showed poor characteristics(high leakage current, low gap voltage), and a high quality Josephson junction array of 2,000 junctions with high hysteresis was obtained with cooling and when operated at 74.6 GHz, it generated stable quantized voltage steps up to 2.2 V.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.692-693
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• 2006

Behavior of stoichiometric and near-stoichiometric NiAl at plasma spray deposition, without and with a bond coat, for coating layers realization on a low alloyed steel substrate, has been investigated. In all variants, NiAl particle melting and subsequent welding at the impact with substrate were observed, forming a relatively compact and adherent coating layer with the NiAl stability maintaining - all assuring the coating layer oxidation and corrosion resistance. Good results from these points of view, also validated through corrosion tests, were obtained for 45:55 Ni:Al composition without a bond coat but adopting an Ar protective surrounding of plasma jet.

• 한국표면공학회지
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• 제31권5호
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• pp.278-285
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• 1998

Alloys of Ti-15Mo-5Zr-3Al(wt%) were oxidized in air between 700 and $900^{\circ}C$. It was found that the oxidation resistance is much better than that of either commercially available pure Ti-6Al-4V(wt%) alloys. The oxide scales were primarily composed of thick Ti-ox-ides which were formed by the inward diffusion of oxygen from the atmosphere. At higher temperatures a thin $\alpha$-$Al_2O_3$ layer was formed on Ti-oxides owing to the outward diffusion of Al from the base alloys. Molybdenum, the noblest metal among the alloy components, was predominantly present behind the oxide-substrate interface. Zirconium, an oxygen active metal, was present at both the oxide layer and the substrate.

• 한국결정성장학회지
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• 제7권2호
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• pp.207-215
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• 1997

Ionized Cluster Beam Deposition(ICBD)방법을 이용하여 Si(100)기판과 TiN(60 nm)/Si(100)기판위에 Al 박막을 증착하였다. 증착된 Al 박막의 증착특성은 $\alpha$-step, four-point-probe, XRD, SEM, AES 측정장치를 가지고 조사해 보았다. 도가니 온도가 증가함에 따라 Al 박막의 증착속도는 증가하였고 비저항 값은 감소하였다. 도가니 온도가 $1800^{\circ}C$인 경우 가속전압이 증가함에 따라 연속적이며 평평한 박막이 형성되고 비저항이 감소되었다. 최소의 비저항 값은 Si 기판에서는 가속전압이 4 kV일 때 3.4 $\mu \Omega \textrm {cm}$, TiN 기판에서는 가속전압이 2kV일 때 3.6 $\mu \Omega \textrm {cm}$. AES 분석결과 형성된 박막내에서는 불순물이 존재하지 않는 것을 알 수 있었다. 따라서 Al 박막의 비저항은 박막충의 미세구조에 의해 영향을 받는다.