• 한국결정성장학회지
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• 제25권4호
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• pp.127-134
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• 2015

AlN 단결정은 넓은 밴드갭(6.2 eV), 높은 열 전도도($285W/m{\cdot}K$), 높은 비저항(${\geq}10^{14}{\Omega}{\cdot}cm$), 그리고 높은 기계적 강도와 같은 장점들 때문에 차세대 반도체 적용을 위한 많은 흥미를 끈다. 벌크 AlN 단결정 또는 박막 템플릿(template)들은 주로 PVT(Physical vapor transport)법, 플럭스(flux)법, 용액 성장(solution growth)법, 그리고 증기 액상 증착(HVPE)법에 의해 성장된다. 단결정이 성장하는 동안에 발생하는 결함들 때문에 상업적으로 어려움을 갖게 된 이후로 결함들 분석을 통한 결정 품질 향상은 필수적이다. 격자결함 밀도(EPD)분석은 AlN 표면에 입자간 방위차와 결함이 존재하고 있는 것을 보여준다. 투과전자현미경(TEM)과 전자후방산란회절(EBSD)분석은 전체적인 결정 퀄리티와 다양한 결함의 종류들을 연구하는데 사용된다. 투과전자현미경(TEM)관찰로 AlN의 형태가 적층 결함, 전위, 이차상 등에 의해 크게 영향을 받는 것을 알 수 있었다. 또한 전자후방산란회절(EBSD)분석은 전위의 생성을 유도하는 성장 결함으로서 AlN의 zinc blende 폴리모프(polymorph)가 존재하고 있는 것을 나타내고 있었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.75-87
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• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• Bulletin of the Korean Chemical Society
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• 제28권10호
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• pp.1675-1682
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• 2007

Large colorless single crystals of faujasite-type zeolite with diameters up to 200 μm have been synthesized from gels with the composition of 3.58SiO2:2.08NaAlO2:7.59NaOH:455H2O:5.06TEA:1.23TCl. Two of these, colorless octahedron about 200 μm in cross-section have been treated with aqueous 0.1 M TlC2H3O2 and KNO3 in order to prepare Tl+- and K+-exchanged faujasite-type zeolites, respectively, and then determined the Si/Al ratio of the zeolite framework. The crystal structures of |Tl71|[Si121Al71O384]-FAU and |K53Na18|[Si121Al71O384]-FAU per unit cell, a = 24.9463(2) and 24.9211(16) A, respectively, dehydrated at 673 K and 1 × 10-6 Torr, have been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd m at 294 K. The two single-crystal structures were refined using all intensities to the final error indices (using only the 905 and 429 reflections for which Fo > 4σ(Fo)) R1/R2 = 0.059/0.153 and 0.066/0.290, respectively. In the structure of fully Tl+-exchanged faujasite-type zeolite, 71 Tl+ ions per unit cell are located at four different crystallographic sites. Twenty-nine Tl+ ions fill site I' in the sodalite cavities on 3-fold axes opposite double 6-rings (Tl-O = 2.631(12) A and O-Tl-O = 93.8(4)o). Another 31 Tl+ ions fill site II opposite single 6-rings in the supercage (Tl-O = 2.782(12) A and O-Tl-O = 87.9(4)o). About 3 Tl+ ions are found at site III in the supercage (Tl-O = 2.91(6) and 3.44(3) A), and the remaining 8 occupy another site III (Tl-O = 2.49(5) and 3.06(3) A). In the structure of partially K+-exchanged faujasite-type zeolite, 53 K+ ions per unit cell are found at five different crystallographic sites and 18 Na+ ions per unit cell are found at two different crystallographic sites. The 4 K+ ions are located at site I, the center of the hexagonal prism (K-O = 2.796(8) A and O-K-O = 89.0(3)o). The 10 K+ ions are found at site I' in the sodalite cavity (K-O = 2.570(19) A and O-KO = 99.4(9)o). Twenty-two K+ ions are found at site II in the supercage (K-O = 2.711(9) A and O-K-O = 94.7(3)o). The 5 K+ ions are found at site III deep in the supercage (K-O = 2.90(5) and 3.36(3) A), and 12 K+ ions are found at another site III' (K-O = 2.55(3) and 2.968(18) A). Twelve Na+ ions also lie at site I' (Na-O = 2.292(10) and O-Na-O = 117.5(5)o). The 6 Na+ ions are found at site II in the supercage (Na-O = 2.390(17) A and O-Na-O = 113.1(11)o). The Si/Al ratio of synthetic faujasite-type zeolite is 1.70 determined by the occupations of cations, 71, in two single-crystal structures.

• Bulletin of the Korean Chemical Society
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• 제35권1호
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• pp.243-249
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• 2014

Three single crystals of fully dehydrated $Co^{2+}$-exchanged zeolite Y (Si/Al = 1.56) were prepared by the exchange of $Na_{75}$-Y ($|Na_{75}|[Si_{117}Al_{75}O_{384}]$-FAU) with aqueous streams 0.05 M in $Co(NO_3)_2$, pH = 5.1, at 294 K for 6 h, 12 h, and 18 h, respectively, followed by vacuum dehydration at 673 K. Their single-crystal structures were determined by synchrotron X-ray diffraction techniques in the cubic space group Fd3m at 100(1) K. They were refined to the final error indices $R_1/wR_2$ = 0.0437/0.1165, 0.0450/0.1228, and 0.0469/0.1278, respectively. Their unit-cell formulas are $|Co_{29.1}Na_{11.8}H_{5.0}|[Si_{117}Al_{75}O_{384}]$-FAU, $|Co_{29.8}Na_{11.0}H_{4.4}|[Si_{117}Al_{75}O_{384}]$-FAU, and $|Co_{30.3}Na_{9.5}H_{4.9}|[Si_{117}Al_{75}O_{384}]$-FAU, respectively. In all three crystals, $Co^{2+}$ ions occupy sites I, I' and II; $Na^+$ ions are also at site II. The tendency of $Co^{2+}$ exchange slightly increases with increasing contact time as $Na^+$ content and the unit cell constant of the zeolite framework decrease.

• 한국세라믹학회지
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• 제50권4호
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• pp.280-287
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• 2013

Plate-type phosphor is a promising substitute in overcoming the issues related to the powder phosphor paste mixed with resin. In this research, $Ca-{\alpha}-SiAlON:Eu^{2+}$ plate phosphor ($Ca_xSi_{12-(m+n)}Al_{m+n}O_nN_{16-n}:Eu_y$) was investigated for the varied compositions (m,n) of the host crystal with the fixed Eu content (y). Densification was promoted for the compositions with increasing 'm' values for the m=2n relationship. Dictated by the Eu concentration inside the phosphor crystal, photoluminescence intensity was stronger in ${\alpha}2$ specimen (m = 3.0, n = 1.5) containing the second phases when compared to ${\alpha}1$ specimen (m = 1.5, n = 0.75) comprising a single-phase ${\alpha}$-SiAlON. The concentration of Eu in the non-emitting amorphous interfacial glass phase was 2~4 times of the designed Eu concentration inside the ${\alpha}$-SiAlON crystal.

• 한국초전도ㆍ저온공학회논문지
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• 제16권3호
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• pp.7-9
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• 2014

Single-crystal like $MgB_2$ thin film was grown on (000l) $Al_2O_3$ substrate by using hybrid physical-chemical vapor deposition (HPCVD) system. Single crystal properties were studied by X-ray diffraction (XRD) and the full width at half maximum (FWHM) of the (0001) $MgB_2$ peak is $15^{\circ}$, which is very close to that has been reported for $MgB_2$ single-crystal. It indicates that the crystalline quality of thin film is good. Temperature dependence on resistivity was investigated by physical property measurement system (PPMS) in various applied fields from 0 to 9 T. The upper critical field ($H_{c2}$) and irreversibility field ($H_{irr}$) were determined from PPMS data, and the estimated values are comparable with that of $MgB_2$ single-crystals. The thin film shows a high critical temperature ($T_c$) of 40.4 K with a sharp superconducting transition width of 0.2 K, and a high residual resistivity ratio (RRR=21), it reflects that $MgB_2$ thin film has a pure phase structure.

• 한국광물학회지
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• 제9권2호
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• pp.82-92
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• 1996

The coarse-grained (0.05∼0.2mm) zeolites occur as the single-crystal cement in the sandstones of the Chunbuk Formation in the Pohang area. The zeolite cements unusually consist of the composite phases of heulandite and clinoptilolite and in a crystal. The zeolite crystals show chemical zoning ranging from 3.56 to 4.10 in Si/(Al+Fe), and tend to become continuously more silicic and alkalic from the margin toward inside of the crystal. The DTA and high-temperature XRD analyses also show complex patterns of both zeolites. Such a composite crystal showing chemical zoning and complex thermo-chemical behaviors indicates that heulandite and clinoptilolite are constituting a solid solution resulted from the coupled substitution of K+Si4+=Ca2+Al3+.

• Bulletin of the Korean Chemical Society
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• 제20권1호
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• pp.65-68
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• 1999

Novel mononuclear group 13 metal complexes with the formula (R2M){NC5H4C(CH3)NNC(S)NH(C6H5)} (M=Al, R=iC4H9 (1); M=Ga, R=iC4H9 (2); M=Al, R=CH2SiMe3 (3); M=Ga, R=CH2SiMe3 (4)) result when 2-acetyl pyridine 4-phenyl-thiosemicarbazone ligand is mixed with trialkyl aluminum or trialkylgallium. These compounds 1-4 are characterized by microanalysis, NMR (1H, 13C) spectroscopy, mass spectra, and singlecrystal X-ray diffraction. X-ray single-crystal diffraction analysis reveals that 1 is mononuclear metal compound with coordination number of 5 and N, N, S-coordination mode.

• 한국진공학회지
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• 제10권1호
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• pp.22-26
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• 2001

Plasma assisted molecular beam epitaxy(PAMBE)를 사용하여 Si 기판위에 성장시킨 AlN 박막에 대하여 성장온도 및 기판의 방향성에 따른 박막의 결정성 변화를 분석하였다. Reflection high energy electron diffraction(RHEED) 패턴을 이용하여 성장 중의 결정성을 관찰하였고, 성장 후에는 X-ray diffraction(XRD), double crystal X-ray diffraction(DCXD), transmission electron microscopy/diffraction(TEM/TED)분석을 하였다. $850^{\circ}C$이상의 온도에서 Si(100)위에 성장된 AlN박막은 육방정계의 c축 방향으로 우선 배향되어 있음을 확인하였으며 Si(111)위에 성장된 AlN박막의 경우 AlN(0001)/Si(111), AlN(1100)/Si(110), AlN(1120)/Si(112)의 결정방위를 가지고 성장하였음을 확인하였다. 또한 Si(111) 기판 위에서는 전위와 적층결함 등 많은 결정결함에 의해 DCD패턴의 반치폭이 2$\theta$=$36.2^{\circ}$에서 약 3000arcsec에 이르는 등 결정성은 좋지 않았으나 AlN박막이 단결정으로 성장된 것으로 나타났다.

• 한국결정성장학회지
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• 제9권2호
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• pp.137-140
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• 1999

Flux법에 의해 성장된 $Bi_2Sr_2CaCu_2O_{8+{\delta}}(Bi2212)$ 단결정의 초전도 특성에 미치는 열처리 및 불순물의 영향을 자화측정에 의해 조사하였다. 초전도 특성은 불순물인 Mg와 Al의 영향을 받음을 알 수 있었으며, 초전도 전이온도(T,) 는 Mg 불순물의 영향에 의해 보다 낮아졌다. 그러나 성장된 결정은 열처리에 의해 초전도 특성이 개선됨을 알 수 있었 으며, 특히 MgO 도가니 사용에 의해 성장된 결정이 $Al_2O_3$ 도가니에 비해서 반자계특성이 현저하게 증가되었다. 반자계 특성의 개선효과에 의해 Mg 불순물은 초전도 특성 열화의 주요 요소라고 생각될 수 없음을 알 수 있었다.