• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.3
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• pp.143-147
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• 2017

To evaluate surface characteristics and improve crystalline quality of AlN single crystal grown by physical vapor transport (PVT) method, wet chemical etching process using $KOH/H_2O_2$ mixture in a low temperature condition and thermal annealing process was proceeded respectively. Conventional etching process using strong base etchant at a high temperature (above $300^{\circ}C$) had formed over etching phenomenon according to crystalline quality of materials. When it occurred to over etching phenomenon, it had a low reliability of dislocation density because it cannot show correct number of etch pits per estimated area. Therefore, it was proceeded to etching process in a low temperature (below $100^{\circ}C$) using $H_2O_2$ as an oxidizer in KOH aqueous solution and to be determined optimum etching condition and dislocation density via scanning electron microscope (SEM). For improving crystalline quality of AlN single crystal, thermal annealing process was proceeded. When compared with specimens as-prepared and as-annealed, full width at half maximum (FWHM) of the specimen as-annealed was decreased exponentially, and we analyzed the mechanism of this process via double crystal X-ray diffraction (DC-XRD).

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.4
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• pp.138-141
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• 2001

The fluorescence emission spectrum of Cr$^{3+}$ doped BeAl$_{6}$ O$_{10}$ crystals at 300 K contains a broad band, three R-like lines and another emission lines. It has been identified by a lifetime resolution spectroscopic technique that there are three kinds of single-Cr$^{3+}$ centers, Cr(I), Cr(II), Cr(III), in this crystal. Cr(I) and Cr(II) are high-crystal field centers responsible for the three main "R-lines", and Cr(III) is a low-crystal field center responsible for the main broad band emission. The structures of these luminescent centers are reported.ted.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.268-273
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• 2004

Deformation of single crystals was studied using finite element analysis to investigate the orientation dependence of plastic deformation observed in NiAl single crystals. Investigation of mechanical properties of single crystals is closely related with the understanding of deformation processes in single crystals. Orientation dependence of material behavior in NiAl single crystals was studied by rotating loading directions from 'hard' orientation. The maximum nominal compressed stress in NiAl single crystals was ranged in a quite wide scope depending on the misalignment from 'hard' orientation. As the compressed axis set closer to 'hard' orientation, the maximum nominal compressed stress rapidly increased and made <100> slips difficult to activate. Therefore, non-<100> slips will be activated instead of <100> slips for 'hard' orientation.

• Tribology and Lubricants
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• v.16 no.5
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• pp.389-394
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• 2000

Scanning Probe Microscope (SPM) such as Scanning Tunneling Microscope (STM) and Atomic Force Microscope (AEM) was shown to be the powerful tool for nano-scale characterization of material surfaces. Using this technique, surface morphology of the cyclically deformed Cu or Cu-Al single crystal was observed. The surface became proportionately rough as the number of cycles increased, but after some number of cycles no further change was observed. Slip steps with the heights of 100 to 200 nm and the widths of 1000 to 2000 nm were prevailing at the stage. The slipped distance of one slip system at the surface was not uniform, and formation of the extrusions or intrusions was assumed to occur such place. By comparing the morphological change caused by crystallographic orientation, strain amplitude, number of cycles or stacking fault energy, some interesting results which help to clarify the basic mechanism of fatigue damage were obtained. Furthermore, applicability of the scanning tunneling microscopy to fatigue damage is discussed.

• Journal of the Mineralogical Society of Korea
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• v.31 no.4
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• pp.235-248
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• 2018

The present work was performed in order to study the effect of competing cation of $Ca^{2+}$ ion on ion exchange of $Cs^+$ on zeolite Y (Si/Al = 1.56). Three single-crystals of fully dehydrated and partially $Cs^+$-exchanged zeolites Y (Si/Al = 1.56) were prepared by the flow method using mixed ion-exchange solutions. The $CsNO_3:Ca(NO_3)_2$ molar ratios of the ion exchange solution were 1 : 1 (crystal 1), 1 : 100 (crystal 2), and 1 : 250 (crystal 3) with a total concentration of 0.05 M. The single-crystals were then vacuum dehydrated at 723 K and $1{\times}10^{-4}Pa$ for 2 days. The structures of the crystals were determined by single-crystal synchrotron X-ray diffraction technique in the cubic space group $Fd{\bar{3}}m$, at 100(1) K. The unit-cell formulas of crystals 1, 2, and 3 were ${\mid}Cs_{21}Ca_{27}{\mid}[Si_{117}Al_{75}O_{384}]-FAU$, ${\mid}Cs_2Ca_{36.5}{\mid}[Si_{117}Al_{75}O_{384}]-FAU$, and ${\mid}Cs_1Ca_{37}{\mid}[Si_{117}Al_{75}O_{384}]-FAU$, respectively. In all three crystals, the $Ca^{2+}$ ions preferred to occupy site I in the D6Rs, with the remainder occupying sites I', II', and II. On the other hand, the significant differences in the fractional distribution of $Cs^+$ ions are observed depending on the intial $Cs^+$ concentrations in given ion exchange solution. In Crystal 1, $Cs^+$ ion are located at sites II', II, III, and III', and in crystal 2, at sites II, IIIa, and IIIb. In crystal 3, $Cs^+$ ions are only located at sites IIIa and IIIb. The degree of $Cs^+$ ion exchange decreased sharply from 28.0 to 2.7 to 1.3 % as the initial $Ca^{2+}$ concentration increases and the $Cs^+$ content decreases.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.155-160
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• 1990

Al-rich Mg-Al spinel single crystals were grown by Verneuil process using oxygen and hydrogen flame. Spinel single crystals were grown in chemical compositions from MgO : Al2O3 mole ratio 1 : 1 to 1 : 3. Mole ratio 1 : 1 was hard to be grown and mole ratio 1 : 2.5 and 1 : 3 were grown well. Selecting well-grown mole ratio 1 : 3, seeds were prepared having [100], [110] and [111] orientation respectively. Growth rate were highest in [100] orientation and lowest in [111] orientation.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.50-60
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• 1997

Undoped, cobalt-doped and erbium-doped $ZnAl_2S_4, ;ZnAl_2Se_4, ;CdAl_2S_4, ;and;CdAl_2Se_4$ single crystals were grown by the chemical transport reaction method. The crystal structures, the lattice constants, the optical energy gaps, and the photoluminescence properties of these single crystals were investigated. Also, the optical transition mechanisms by the impurities of cobalt and erbium were identified from these results.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.6
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• pp.1515-1522
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• 1990

Ultra precision cutting should be satisfied with two conditions of Mirror Like and shape grade, and especially Mirror Like depends on surface roughness. In this study, in order to develop Mirror Cutting for Al alloy, this was done with edge form of single crystal diamond tool divided into R type and S type. Surface roughness machined by S type tool is more satisfactory than by R type tool, being the lowest value of 13.8nm. In addition, Mirror surface can reach above 90% of reflection rate by both R type and S type tool, but machined surface by R type tool has much more fine fracture portions rather than by S type tool. Even though feed rate decreases from 5.mu.m to 1.mu.m, surface roughness doesn't show improvement.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.1
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• pp.1-12
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• 2020

In this study, thin foil fabrication using Ni/Ni₃Al single crystal was performed by cold-rolling. It was found that the cold-rolling behavior was strongly dependent on the initial crystallographic orientation rather than morphology of Ni₃Al precipitates. The deformation banding was formed in the case of (100)[001]- and (210)[001]-oriented specimens at 83% reduction in thickness. However, the effects of Ni₃Al precipitates morphology on the microstructure evolution of Ni/Ni₃Al single crystals during cold-rolling were not so serious comparing with the effects of initial crystallographic orientation. Therefore, it could be concluded that the deformation behavior of Ni/Ni₃Al single crystals at serious strain level was strongly dependent on the initial crystallographic orientation rather than the morphology of Ni₃Al precipitates, whereas the initial deformation behavior was related to both crystallographic orientation and the morphology of Ni₃Al precipitates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.127-134
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• 2015

Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.